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Vasquez, R. P.

Publications and source records attributed to Vasquez, R. P..

At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
NASA NTRS1995

X-Ray Photoemission Measurements and Electronic Structure of HgBa2CaCu2O6+Delta

X-ray photoelectron spectroscopy data presented here are the first on an epitaxial thin film of a mercury cuprate superconductor, the first in which signals from the superconducting phase dominate all the core level spectra, and the first to exhibit a clear Fermi edge in the valence band region. Mercury is found to be in a single chemical state, contrary to reports based on sintered polycrystalline pellets.

x-ray photoemission photoelectron spectroscopy mer↗
NASA NTRS1994

(abstract) Epitaxial High-T(sub c) SNS Weak Links on Silicon-on-Sapphire Substrates

High-T(sub c) SNS weak links are expected to prove useful as high frequency sources and detectors. Recent studies with low-T(sub c) Josephson mixers using shunted tunnel junctions at 100 GHz show good initial performance, and modeling suggests that these results should extrapolate to higher frequencies if larger I(sub c)R(sub n) products can be achieved. Progress on this work will be reported.

high frequency sources detectors Josephson silicon↗
NASA NTRS1993

(abstract) High-T(sub c) SNS Weak Links Using Oxide Normal Metals

This work examines device results for edge-geometry SNS weak links utilizing a variety of oxide normal metals. A comparison of the electrical properties of fabricated devices and the magnetic field response will be presented. Device reproducibility will also be discussed. This talk will also examine recent progress in fabrication of epitaxial SNS weak links on silicon-on-sapphire (SOS) substrates. SNS weak links fabricated recently are under investigation, and preliminary results on these devices will be discussed.

SNS weak links oxide normal metals silicon-on-sapp↗
NASA NTRS1993

Visible photoluminescence of porous Si(1-x)Ge(x) obtained by stain etching

We have investigated visible photoluminescence (PL) from thin porous Si(1-x)Ge(x) alloy layers prepared by stain etching of molecular-beam-epitaxy-grown material. Seven samples with nominal Ge fraction x varying from 0.04 to 0.41 were studied at room temperature and 80 K. Samples of bulk stain etched Si and Ge were also investigated. The composition of the porous material was determined using X-ray photoemission spectroscopy and Rutherford backscattering techniques to be considerably more Ge-rich than the starting epitaxial layers. While the luminescence intensity drops significantly with the increasing Ge fraction, we observe no significant variation in the PL wavelength at room temperature. This is clearly in contradiction to the popular model based on quantum confinement in crystalline silicon which predicts that the PL energy should follow the bandgap variation of the starting material. However, our data are consistent with small active units containing only a few Si atoms that are responsible for the light emission. Such units are present in many compounds proposed in the literature as the cause of the visible PL in porous Si.

Ksendzov, A.↗
NASA NTRS1993

Below band-gap laser ablation of diamond for transmission electron microscopy

A 248 nm excimer laser was used to thin naturally occurring type 1a diamond substrates at normal and glancing (22 deg) incidence. Perforation of a 250-micron-thick substrate was achieved in about 15 min at normal incidence. While the substrate thinned at glancing incidence was found to have large electron-transparent areas, that thinned at normal incidence required additional argon-ion milling to achieve electron transparency. X-ray photoelectron spectroscopy of the back surface of the diamond failed to detect any graphite or glassy carbon, confirming that damage due to laser ablation occurs only at the incident surface. Samples prepared using this technique imaged in the transmission electron microscope were observed to have retained the nitrogen platelets characteristic of such type 1a diamonds.

George, T.↗
NASA NTRS1993

Transition Edge YBa_2Cu_3O_(7-x) Microbolometers for Infrared Staring Arrays

A potentially important application of high-temperature superconducting microbolometers is infrared staring arrays. In many such staring arrays, sensitivity is more important than speed of response. Thus, it is desirable to design low-thermal-mass pixels that are thermally isolated from the substrate. To this end, Johnson, et al. at Honeywell have fabricated meander lines of YBa_2Cu_3O_7(-x) (YBCO) sandwiched between layers of Si_3N_4 (SN). The silicon was etched out from under each YBCO meander line to form low-thermal-mass, thermally isolated microbolometers. These devices showed responsivities up to 60 kV/W with a 16 micro-A bias, and a noise equivalent power of 9x10^(-13) W/Hz^(1/2) at 7 Hz with a 5 micro-A bias (neglecting contact noise)...

Foote, M. C.↗
NASA NTRS1993

Below Band-Gap Laser Ablation of Diamond for Transmission Electron Microscopy

A 248-nm excimer laser was used to thin naturally occurring type 1a diamond substrates at normal and glancing (22 deg) incidence. Perforation of a 250 micron thick substrate was achieved in about 15 minutes at normal incidence. Whilst the substrate thinned at glancing incidence was found to have large electron-transparent areas, that thinned at normal incidence required additional argon milling to achieve electron transparency. X-ray photoelectron spectroscopy of the back surface of the diamond failed to detect any graphite or glassy carbon, confirming that damage due to laser ablation occurs only at the incident surface. Samples prepared using this technique imaged in the transmission electron microscope were observed to have retained the nitrogen platelets

Posthill, J. B.↗
NASA NTRS1992

New class of Si-based superlattices - Alternating layers of crystalline Si and porous amorphous Si(1-x)Ge(x) alloys

Superlattices consisting of alternating layers of crystalline Si and porous amorphous Si(1-x)Ge(x) have been fabricated. This is accomplished by first growing a Si/Si(0.7)Ge(0.3) superlattice by molecular beam epitaxy, followed by Ar-ion milling to form mesa structures, and finally by immersion in HF:HNO3:H2O. This solution creates a porous structure similar to that created by anodic etching, and a high selectivity is observed for the conversion of the alloy layers relative to the Si layers. The degree of selectivity is found to depend on alloy-layer thickness and strain. Superlattices have been fabricated from 1-micron wide mesas with Si(0.7)Ge(0.3) layers fully converted to 5-nm thick porous amorphous material.

Fathauer, R. W.↗
NASA NTRS1992

X-ray photoelectron spectroscopy characterization of a nonsuperconducting Y-Ba-Cu-O superconductor-normal-metal-superconductor barrier material

A film of a novel nonsuperconducting Y-Ba-Cu-O (YBCO) barrier material was grown using conditions similar to those reported by Agostinelli et al. (1991) for forming a cubic semiconducting (c-YBCO) phase, and the material was characterized using X-ray photoelectron spectroscopy (XPS). A comparison of the XPS spectra of this material to those obtained from the orthorhombic and tetragonal phases of YBCO (o-YBCO and t-YBCO, respectively) showed that the barrier material had spectral characteristics different from those of o-YBCO and t-YBCO, particularly in the O 1s region. Features associated with the Cu-O chain and surface-reconstructed Cu-O planes were absent, consistent with expectations for the simple perovskite crystal structure of c-YBCO proposed by Agostinelli et al.

Vasquez, R. P.↗
NASA NTRS1992

Visible luminescence from silicon wafers subjected to stain etches

Etching of Si in a variety of solutions is known to cause staining. These stain layers consist of porous material similar to that produced by anodic etching of Si in HF solutions. In this work, photoluminescence peaked in the red from stain-etched Si wafers of different dopant types, concentrations, and orientations produced in solutions of HF:HNO3:H2O was observed. Luminescence is also observed in stain films produced in solutions of NaNO2 in HF, but not in stain films produced in solutions of CrO3 in HF. The luminescence spectra are similar to those reported recently for porous Si films produced by anodic etching in HF solutions. However, stain films are much easier to produce, requiring no special equipment.

Fathauer, R. W.↗
NASA NTRS1992

Electronic structure of light-emitting porous Si

Characterization of light-emitting porous Si films with X-ray photoelectron spectroscopy is reported. Only traces of O are detected on HF-etched samples, in contradiction to an earlier report that oxides are a significant component of porous Si. Si 2p and valence-band measurements demonstrate that the near-surface region of high porosity films which exhibit visible luminescence consists of amorphous Si.

Vasquez, R. P.↗
NASA NTRS1992

All-YBa2Cu3O(7-x) edge-geometry weak links

High quality YBa2Cu3O(7-x)/normal-metal/YBa2Cu3O(7-x) edge-geometry weak links are fabricated using nonsuperconducting Y-Ba-Cu-O barrier layers deposited by laser ablation at reduced growth temperatures. Devices incorporating 25-100-A-thick barrier layers exhibit current-voltage characteristics consistent with the resistively-shunted-junction model, as well as ac Josephson steps. Magnetic field modulation of the critical currents shows Fraunhofer-like behavior with a periodicity which scales with device area. The critical currents vary exponentially with barrier thickness indicating an effective normal metal coherence length of 20 A. The average resistances scale linearly with Y-Ba-Cu-O interlayer thickness and device area. The scaling behavior of the device parameters combined with the well-behaved magnetic field modulation of the critical currents demonstrates good barrier-layer uniformity with low pinhole densities. Near the transition temperature, the critical currents exhibit a temperature dependence proportional to (1 - T/Tc) squared.

Hunt, B. D.↗
NASA NTRS1992

Fabrication of luminescent porous silicon with stain etches and evidence that luminescence originates in amorphous layers

Simple immersion of Si in stain etches of HF:HNO3:H2O or NaNO2 in aqueous HF was used to produce films exhibiting luminescence in the visible similar to that of anodically-etched porous Si. All of the luminescent samples consist of amorphous porous Si in at least the near surface region. No evidence was found for small crystalline regions within these amorphous layers.

Fathauer, R. W.↗