Decoupling CO2 effects from electrochemistry: A mechanistic study of copper catalyst degradation
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36 MATERIALS SCIENCE↗
Engineering topics
Varley, Joel B.
Publications and source records attributed to Varley, Joel B..
Photoluminescence and Raman spectroscopy of wide bandgap semiconductors damaged by deep-UV laser irradiation
The effects of a pulsed, focused, deep-UV (4.66 eV) laser on wide and ultra-wide bandgap semiconductors were investigated with photoluminescence (PL) and Raman spectroscopy. Three semiconductor single crystals were studied: silicon carbide (6H-SiC), gallium nitride (GaN), and gallium oxide (β-Ga 2 O 3 ). Atomic emission lines from neutral Ga or Si were observed during the laser-damage process. For all three semiconductors, PL mapping (3.49 eV laser excitation) of the damaged material revealed visible emission bands in the 2.6–2.8 eV range, attributed to point defects. Raman spectra (2.33 eV excitation) showed a reduction in the Raman peak intensities in the damaged region, along with weak PL bands around 1.9–2.1 eV.
36 MATERIALS SCIENCE↗
Growth Phenomena and Bandgap Shift in Melt-Grown β-(In x Ga 1- x ) 2 O 3 Alloys
β-Ga 2 O 3 is an emerging ultra-wide bandgap semiconductor with great promise for power electronics and optoelectronics. Alloys in the In 2 O 3 -Ga 2 O 3 system are interesting for optoelectronic applications, particularly where bandgap tuning is desirable. Herein, β-(In x Ga 1- x ) 2 O 3 alloys with target compositions x = 0.025 or 0.10 are grown from the melt using the Czochralski and vertical gradient freeze techniques. Growth with 10 mol% In yields only small, needle-like crystals, while 2.5 mol% In allows growth of centimeter-sized single crystals. A substantial degree of indium segregation is unveiled by spatial measurements of lattice parameters and the bandgap. The bandgap decreases by a maximum of 0.28 eV in the case of the highest In content crystals. Z-contrast transmission electron microscopy confirms a solely octahedral coordination of In in the β-Ga 2 O 3 lattice. With indium concentrations higher than 2.5 mol%, samples contain micron-scale voids that impart a dark coloration. All measured crystals are electrically conductive, with carrier concentrations varying 10 16 –10 17 cm -3 depending upon the location of the sample in the growth. Lastly, a unique luminescence with unknown origin centered around 2.0 eV is revealed by photoluminescence spectroscopy.
36 MATERIALS SCIENCE↗
Enhanced Laser Damage Threshold in Optically Addressable Light Valves via Aluminum Nitride Photoconductors
Abstract Optically addressable light valves (OALVs) are specialized optical components utilized for spatial beam shaping in various laser‐based applications, including optics damage mitigation, and enhanced functionality in diode‐based additive manufacturing requiring high intensities. Current state‐of‐the‐art OALVs employ photoconductors such as Bismuth Silicon Oxide (BSO) or Bismuth Germanium Oxide (BGO), which suffer from limited laser‐induced damage thresholds (LiDT) and inadequate thermal conductivities, thus restricting their use in high peak and average power applications. Aluminum nitride (AlN), an emerging ultra‐wide band gap (UWBG) III–V semiconductor, offers promising optoelectronic properties and superior thermal conductivity (>300 Wm −1 K −1 at 298° K, compared to BSO's 3.29 Wm −1 K −1 ). In this study, the first AlN‐based OALVs are designed, fabricated, and experimentally demonstrated using commercially available single‐crystal AlN substrates. These AlN‐based OALVs have shown clear superiority over BSO and BGO‐based devices. Design considerations for OALVs incorporating UWBG photoconductors are discussed, and the photoresponsivity from defect‐mediated sub‐bandgap absorption in AlN crystals is verified as sufficient for OALVs operating under high light fluences. The optimum driving voltage for the AlN‐based OALV is determined to be ≈ 45 V pp at 100 Hz, achieving a transmittance of 91.3%, an extinction ratio (ER) of more than 100, and a 51:1 image contrast.
36 MATERIALS SCIENCE↗
Aging Mechanisms of Broad Area ~800 nm Laser Diodes
Here, this work presents a comprehensive study of early aging behavior (<500 hr) in ~800 nm, phosphide-based laser diodes grown by solid-source MBE with different oxygen concentration levels incorporated into the diode epitaxial layers during growth. The data indicate that lasing characteristics prior to aging are degraded by oxygen introduction, but the gradual power degradation rate after the onset of aging is not a strong function of oxygen at these concentration levels. Devices with oxygen concentrations of ~2.5 × 10 15 cm -3 showed significantly longer delay before the onset of aging (incubation time) than devices with less than 1 × 10 15 cm -3 oxygen. Generation-Recombination current and Laser Beam Induced Current measurements indicate that defect densities and aggregation are suppressed at the facets by oxygen, which can explain longer incubation times. Diagnostic data and parametric fits to diode simulation models show that increased cavity optical loss and defect density are primarily responsible for gradual power degradation during aging, rather than changes in nonradiative recombination. Mechanisms are proposed that explain this behavior, based on density functional theory (DFT) simulations and known recombination-enhanced defect generation phenomena.
47 OTHER INSTRUMENTATION↗
MOCVD growth of Si-doped α-(AlGa) 2 O 3 on m-plane α-Al 2 O 3 substrates
We reported the growth of (AlGa) 2 O 3 layers on ($10\overline{10}$) α-Al 2 O 3 substrates using cold-wall metalorganic chemical vapor deposition, and the electrical characterization of Si-doped (AlGa) 2 O 3 layers. In the Ga 2 O 3 growth, the α phase was dominant at low growth temperature, achieving the growth rate of 2.4 μm h –1 at 650 °C. Sheet resistance and electrical conductivity of the Ga 2 O 3 layers with a Si concentration of 3 × 10 20 cm –3 were 1 × 10 4 Ω/square and 8.3 S cm –1 , respectively, at the measurement temperature of 500 °C. The Al composition in the (AlGa) 2 O 3 layers was controlled from 0% to 74%. In our initial attempts, we obtained electrically conductive α-(AlGa) 2 O 3 layers by Si doping (2 × 10 –9 S cm –1 in the sample with an Al composition of 56%). Finally, hybrid functional calculations suggest the conductivities are limited by compensation of Si through cation vacancy complexes, and not by the significant amounts of co-incorporated C and N that are predicted to be electrically passivated by hydrogen.
36 MATERIALS SCIENCE↗
Cu Based Dilute Alloys for Tuning the C 2+ Selectivity of Electrochemical CO 2 Reduction
Electrochemical CO 2 reduction is a promising technology for replacing fossil fuel feedstocks in the chemical industry but further improvements in catalyst selectivity need to be made. So far, only copper-based catalysts have shown efficient conversion of CO 2 into the desired multi-carbon (C 2+ ) products. This work explores Cu-based dilute alloys to systematically tune the energy landscape of CO 2 electrolysis toward C 2+ products. Selection of the dilute alloy components is guided by grand canonical density functional theory simulations using the calculated binding energies of the reaction intermediates CO*, CHO*, and OCCO* dimer as descriptors for the selectivity toward C 2+ products. Here, a physical vapor deposition catalyst testing platform is employed to isolate the effect of alloy composition on the C 2+ /C 1 product branching ratio without interference from catalyst morphology or catalyst integration. Six dilute alloy catalysts are prepared and tested with respect to their C 2+ /C 1 product ratio using different electrolyzer environments including selected tests in a 100-cm 2 electrolyzer. Consistent with theory, CuAl, CuB, CuGa and especially CuSc show increased selectivity toward C 2+ products by making CO dimerization energetically more favorable on the dominant Cu facets, demonstrating the power of using the dilute alloy approach to tune the selectivity of CO 2 electrolysis.
36 MATERIALS SCIENCE↗
Photoluminescence mapping of laser-damaged β-Ga 2 O 3
Here, photoluminescence (PL) mapping was utilized to investigate damage in β-Ga 2 O 3 epilayers induced by 1064 nm laser pulses. The intensity and position of the intrinsic UV band were determined and plotted as a false-color image. Two types of damage were identified: circular damage and damage cracks. Circular damage shows lower UV PL intensity than the surrounding material with color centers in a “halo” around the damaged region. Damage cracks are aligned with the a and c axes and show higher PL intensity than undamaged material. Defects in the as-grown material were revealed by shifts in the UV band energy.
36 MATERIALS SCIENCE↗
Simulating charged defects at database scale
Point defects have a strong influence on the physical properties of materials, often dominating the electronic and optical behavior in semiconductors and insulators. The simulation and analysis of point defects is, therefore, crucial for understanding the growth and operation of materials, especially for optoelectronics applications. In this work, we present a general-purpose Python framework for the analysis of point defects in crystalline materials as well as a generalized workflow for their treatment with high-throughput simulations. The distinguishing feature of our approach is an emphasis on a unique, unit cell, structure-only, definition of point defects which decouples the defect definition, and the specific supercell representation used to simulate the defect. This allows the results of first-principles calculations to be aggregated into a database without extensive provenance information and is a crucial step in building a persistent database of point defects that can grow over time, a key component toward realizing the idea of a “defect genome” that can yield more complex relationships governing the behavior of defects in materials. We demonstrate several examples of the approach for three technologically relevant materials and highlight current pitfalls that must be considered when employing these methodologies as well as their potential solutions.
36 MATERIALS SCIENCE↗
Theoretical Investigation of the Adsorbate and Potential–Induced Stability of Cu Facets During Electrochemical CO 2 and CO Reduction
The activity and product selectivity of electrocatalysts for reactions like the carbon dioxide reduction reaction (CO 2 RR) are intimately dependent on the catalyst's structure and composition. While engineering catalytic surfaces can improve performance, discovering the key sets of rational design principles remains challenging due to limitations in modeling catalyst stability under operating conditions. Herein, we perform first-principles density functional calculations adopting implicit solvation methods with potential control to study the influence of adsorbates and applied potential on the stability of different facets of model Cu electrocatalysts. Using coverage dependencies extracted from microkinetic models, we describe an approach for calculating potential and adsorbate-dependent contributions to surface energies under reaction conditions, where Wulff constructions are used to understand the morphological evolution of Cu electrocatalysts under CO 2 RR conditions. Here we identify that CO*, a key reaction intermediate, exhibits higher kinetically and thermodynamically accessible coverages on (100) relative to (111) facets, which can translate into an increased relative stabilization of the (100) facet during CO 2 RR. Our results support the known tendency for increased (111) faceting of Cu nanoparticles under more reducing conditions and that the relative increase in (100) faceting observed under CO 2 RR conditions is likely attributed to differences in CO* coverage between these facets.
30 DIRECT ENERGY CONVERSION↗
Importance of Site Diversity and Connectivity in Electrochemical CO Reduction on Cu
Electrochemical CO 2 reduction on Cu is a promising approach to produce value-added chemicals using renewable feedstocks, yet various Cu preparations have led to differences in activity and selectivity toward single and multicarbon products. Here, we find, surprisingly, that the effective catalytic activity toward ethylene improves when there is a larger fraction of less active sites acting as reservoirs of *CO on the surface of Cu nanoparticle electrocatalysts. In an adaptation of chemical transient kinetics to electrocatalysis, we measure the dynamic response of a gas diffusion electrode (GDE) cell when the feed gas is abruptly switched between Ar (inert) and CO. When switching from Ar to CO, CO reduction (COR) begins promptly, but when switching from CO to Ar, COR can be maintained for several seconds (delay time) despite the absence of the CO reactant in the gas phase. A three-site microkinetic model captures the observed dynamic behavior and shows that Cu catalysts exhibiting delay times have a less active *CO reservoir that exhibits fast diffusion to active sites. The observed delay times and the estimated *CO reservoir sizes are affected by catalyst preparation, applied potential, and microenvironment (electrolyte cation identity, electrolyte pH, and CO partial pressure). Notably, we estimate that the *CO reservoir surface coverage can be as high as 88 ± 7% on oxide-derived Cu (OD-Cu) at high overpotentials (–1.52 V vs SHE) and this increases in reservoir coverage coincide with increased turnover frequencies to ethylene. We also estimate that *CO can travel substantial distances (up to 10s of nm) prior to desorption or reaction. It appears that active C–C coupling sites by themselves do not control selectivity to C 2+ products in electrochemical COR; the supply of CO to those sites is also a crucial factor. More generally, the overall activity of Cu electrocatalysts cannot be approximated from linear combinations of individual site activities. Future designs must consider the diversity of the catalyst network and account for intersite transportation pathways.
30 DIRECT ENERGY CONVERSION↗
Melt-grown semi-insulating Mn:β-Ga 2 O 3 single crystals exhibiting unique visible absorptions and luminescence
In this study, several acceptor dopants have been explored in β-Ga 2 O 3 to produce semi-insulating substrates and epitaxial films. Fe and Mg make up the majority of research thus far; however, other transition metals provide potential alternatives for optimized performance. β-Ga 2 O 3 bulk single crystals were grown by the Czochralski and vertical gradient freeze methods with a nominal dopant concentration of 0.25 at. % Mn. Ultraviolet-visible-near infrared spectroscopy and photoluminescence revealed polarization- and orientation-dependent optical absorptions (pleochroism) coupled with an orange luminescence. All samples were electrically insulating, on the order of 10 9 –10 11 ohm cm at room temperature, indicative of acceptor doping. Actual dopant concentrations of the intentionally doped transition metal and background impurities were determined via glow discharge mass spectrometry, indicating the macroscale segregation behavior. High-temperature resistivity measurements indicated an experimental acceptor level of 1.7 ± 0.2 eV. Hydrogenation of samples resulted in an increase in the orange luminescence and O–H stretching modes observable in the infrared spectrum. Density functional theory calculations were performed to determine the likely site-occupancy and acceptor level of Mn in the bandgap.
36 MATERIALS SCIENCE↗
Thermal Stability of Schottky Contacts and Rearrangement of Defects in β ‐Ga 2 O 3 Crystals
Abstract The thermal stability of different Schottky contacts (Au, Pt, and Ni) on (100) β ‐Ga 2 O 3 single crystals grown by the Czochralski method is investigated. Besides the examination of the Schottky barrier parameters, contact‐dependent defect levels are investigated by deep‐level transient spectroscopy (DLTS) in a 100–650 K (ramp‐up) and 650–100 K (ramp‐down) temperature cycle. Several defect levels are detected below the conduction band minimum at 0.41, 0.60, 0.77, 0.96, and 1.17 eV. In the temperature ramp‐down DLTS, the 1.17 eV level disappears, and the 0.60 eV level appears for all Schottky contacts. DFT calculations suggest that rearrangement and dissociation of a single hydrogen from a doubly‐hydrogenated Ga─O divacancy complex occurs during the temperature sweep under bias. The trap level at 0.96 eV only appears after the thermal load for the Ni contact, in contrast to Au and Pt, where it is present without a thermal budget. Temperature‐dependent leakage current (at −4 V) measurements indicate oxidation of Ni, and further thermodynamic analysis suggests alloying of Au‐Ga atoms at the Au/ β ‐Ga 2 O 3 interface. These studies provide insight into the behavior induced by these common Schottky contacts and the alteration associated with temperature cycling.
36 MATERIALS SCIENCE↗
Incorporation of protons and hydroxide species in BaZrO 3 and BaCeO 3
We calculate the energetics of protonation in proton-conducting oxides, as well as defect concentrations and mobility under electrolysis conditions.
08 HYDROGEN↗
Charge state transition levels of Ni in $β$-Ga 2 O 3 crystals from experiment and theory: An attractive candidate for compensation doping
Nickel-doped β-Ga 2 O 3 crystals were investigated by optical absorption and photoconductivity, revealing Ni-related deep levels. Here, the photoconductivity spectra were fitted using the phenomenological Kopylov and Pikhtin model to identify the energy of the zero-phonon transition (thermal ionization), Franck–Condon shift, and effective phonon energy. The resulting values are compared with the predicted ones by first-principle calculations based on the density functional theory (DFT). An acceptor level (0/-) of 1.9 eV and a donor level (+/0) of 1.1 eV above the valence band minimum are consistently determined for Ni Ga , which preferentially incorporates on the octahedrally coordinated Ga site. Temperature-dependent resistivity measurements yield a thermal activation energy of ~2.0 eV that agrees well with the determined Ni acceptor level. Conclusively, Ni is an eminently suitable candidate for compensation doping for producing semi-insulating β-Ga 2 O 3 substrates due to the position of the acceptor level (below and close to the mid-bandgap).
36 MATERIALS SCIENCE↗
Identification and characterization of deep nitrogen acceptors in β-Ga 2 O 3 using defect spectroscopies
The ability to achieve highly resistive beta-phase gallium oxide (β-Ga 2 O 3 ) layers and substrates is critical for β-Ga 2 O 3 high voltage and RF devices. To date, the most common approach involves doping with iron (Fe), which generates a moderately deep acceptor-like defect state located at E C -0.8 eV in the β-Ga 2 O 3 bandgap. Recently, there has been growing interest in alternative acceptors, such as magnesium (Mg) and nitrogen (N), due to their predicted deeper energy levels, which could avoid inadvertent charge modulation during device operation. In this work, a systematic study that makes direct correlations between the introduction of N using ion implantation and the observation of a newly observed deep level at E C -2.9 eV detected by deep-level optical spectroscopy (DLOS) is presented. The concentration of this state displayed a monotonic dependence with N concentration over a range of implant conditions, as confirmed by secondary ion mass spectrometry (SIMS). With a near 1:1 match in absolute N and E C -2.9 eV trap concentrations from SIMS and DLOS, respectively, which also matched the measured removal of free electrons from capacitance-voltage studies, this indicates that N contributes a very efficiently incorporated compensating defect. Density functional theory calculations confirm the assignment of this state to be an N (0/-1) acceptor with a configuration of N occupying the oxygen site III [N O(III) ]. The near ideal efficiency for this state to compensate free electrons and its location toward the midgap region of the β-Ga 2 O 3 bandgap demonstrates the potential of N doping as a promising approach for producing semi-insulating β-Ga 2 O 3 .
36 MATERIALS SCIENCE↗