Benchmarking Gate Fidelities in a Si / SiGe Two-Qubit Device
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71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
Engineering topics
Vandersypen, L. M. K.
Publications and source records attributed to Vandersypen, L. M. K..
A capacitance spectroscopy-based platform for realizing gate-defined electronic lattices
Electrostatic confinement in semiconductors provides a flexible platform for the emulation of interacting electrons in a two-dimensional lattice, including in the presence of gauge fields. This combination offers the potential to realize a wide host of quantum phases. Capacitance spectroscopy demonstrates a technique that allows one to directly probe the density of states of such two-dimensional electron systems. Here, we present a measurement and fabrication scheme that builds on capacitance spectroscopy and allows for the independent control of density and periodic potential strength imposed on a two-dimensional electron gas. We characterize disorder levels and (in)homogeneity and develop and optimize different gating strategies at length scales where interactions are expected to be strong. A continuation of these ideas might see to fruition the emulation of interaction-driven Mott transitions or Hofstadter butterfly physics
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
The critical role of substrate disorder in valley splitting in Si quantum wells
Atomic-scale disorder at the top interface of a Si quantum well is known to suppress the valley splitting. Such disorder may be inherited from the underlying substrate and relaxed buffer growth, but can also arise at the top quantum well interface due to the random SiGe alloy. Here, we perform activation energy (transport) measurements in the quantum Hall regime to determine the source of the disorder affecting the valley splitting. We consider three Si/SiGe heterostructures with nominally identical substrates but different barriers at the top of the quantum well, including two samples with pure-Ge interfaces. For all three samples, we observe a surprisingly strong and universal dependence of the valley splitting on the electron density (E v ~ n 2.7 ) over the entire experimental range (E v = 30-200 µeV). In conclusion, we interpret these results via tight binding theory, arguing that the underlying valley physics is determined mainly by disorder arising from the substrate and relaxed buffer growth.
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
A programmable two-qubit quantum processor in silicon
Now that it is possible to achieve measurement and control fidelities for individual quantum bits (qubits) above the threshold for fault tolerance, attention is moving towards the difficult task of scaling up the number of physical qubits to the large numbers that are needed for fault-tolerant quantum computing (1,2). In this context, quantum-dot-based spin qubits could have substantial advantages over other types of qubit owing to their potential for all-electrical operation and ability to be integrated at high density onto an industrial platform (3,4,5). Initialization, readout and single- and two-qubit gates have been demonstrated in various quantum-dot-based qubit representations (6,7,8,9). However, as seen with small-scale demonstrations of quantum computers using other types of qubit (10,11,12,13), combining these elements leads to challenges related to qubit crosstalk, state leakage, calibration and control hardware. We overcome these challenges by using carefully designed control techniques to demonstrate a programmable two-qubit quantum processor in a silicon device that can perform the Deutsch–Josza algorithm and the Grover search algorithm—canonical examples of quantum algorithms that outperform their classical analogues. We characterize the entanglement in our processor by using quantum-state tomography of Bell states, measuring state fidelities of 85–89 per cent and concurrences of 73–82 per cent. These results pave the way for larger-scale quantum computers that use spins confined to quantum dots.
77 NANOSCIENCE AND NANOTECHNOLOGY↗
Dressed photon-orbital states in a quantum dot: Intervalley spin resonance
Because of the symmetry in silicon quantum wells, silicon quantum dots have an extra degree of freedom leading to a small energy splitting called the valley splitting. This degree of freedom has been viewed alternately as a hazard, especially when the lowest valley-orbit splitting is small compared to the thermal energy, or as an asset, most prominently in proposals to use the valley degree of freedom itself as a qubit. Here we present experiments in which microwave electric field driving induces transitions between both valley-orbit and spin states. We show that this system is highly nonlinear and can be understood through the use of dressed photon-orbital states, enabling a unified understanding of six resonance lines we observe in these experiments.
77 NANOSCIENCE AND NANOTECHNOLOGY↗
Nanosecond-timescale spin transfer using individual electrons in a quadruple-quantum-dot device
The ability to coherently transport electron-spin states between different sites of gate-defined semiconductor quantum dots is an essential ingredient for a quantum-dot-based quantum computer. Previous shuttles using electrostatic gating were too slow to move an electron within the spin dephasing time across an array. Here, we report a nanosecond-timescale spin transfer of individual electrons across a quadruple-quantum-dot device. Utilizing enhanced relaxation rates at a so-called hot spot, we can upper bound the shuttle time to at most 150 ns. While actual shuttle times are likely shorter, 150 ns is already fast enough to preserve spin coherence in, e.g., silicon based quantum dots. This work therefore realizes an important prerequisite for coherent spin transfer in quantum dot arrays.
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
Computer-automated tuning of semiconductor double quantum dots into the single-electron regime
We report the computer-automated tuning of gate-defined semiconductor double quantum dots in GaAs heterostructures. We benchmark the algorithm by creating three double quantum dots inside a linear array of four quantum dots. The algorithm sets the correct gate voltages for all the gates to tune the double quantum dots into the single-electron regime. The algorithm only requires (1) prior knowledge of the gate design and (2) the pinch-off value of the single gate T that is shared by all the quantum dots. This work significantly alleviates the user effort required to tune multiple quantum dot devices.
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗