Engineering topics

Trew, R. J.

Publications and source records attributed to Trew, R. J..

6 records

NASA NTRS1994

Switched-beam radiometer front-end network analysis

The noise figure performance of various delay-line networks fabricated from microstrip lines with varying number of elements was investigated using a computer simulation. The effects of resistive losses in both the transmission lines and power combiners were considered. In general, it is found that an optimum number of elements exists, depending upon the resistive losses present in the network. Small resistive losses are found to have a significant degrading effect upon the noise figure performance of the array. Extreme stability in switching characteristics is necessary to minimize the nondeterministic noise of the array. For example, it is found that a 6 percent tolerance on the delay-line lengths will produce a 0.2 db uncertainty in the noise figure which translates into a 13.67 K temperature uncertainty generated by the network. If the tolerance can be held to 2 percent, the uncertainty in noise figure and noise temperature will be 0.025 db and 1.67 K, respectively. Three phase shift networks fabricated using a commercially available PIN diode switch were investigated. Loaded-line phase shifters are found to have desirable RF and noise characteristics and are attractive components for use in phased-array networks.

Trew, R. J.↗

NASA NTRS1991

Low-loss coupling to dielectric resonators

A compilation is presented of experimental observations and arguments concerning the use of dielectric resonators in applications requiring both tight coupling (beta greater than 10) and high unloaded Q, such as low loss bandpass filters. The microstrip coupled dielectric resonator is the primary focus, but an alternative coupling technique is discussed and comparatively evaluated. It is concluded that coupling factors as large as 65 are achievable.

Hearn, C. P.↗

NASA NTRS1990

The effect of coupling line loss in microstrip to dielectric resonator coupling

The interaction between a dielectric resonator and a microstrip transmission line is fundamentally a field phenomenon. However, the model of Figure 1b widely is used to represent the arrangement in Figure 1a, and predicts the behavior encountered in practice. The microstrip line of length l = n(lambda)/4 between the input and coupling planes and the lambda/4 open-circuit stub usually is assumed to be lossless. This paper considers the effect of coupling line loss on the unloaded-Q and coupling coefficient beta of the combination. It shows that transmission line loss can cause the decrease in unloaded-Q that has been observed to occur with tight coupling, and limits the coupling coefficient to a much lower value than would be obtained with a lossless coupling line.

Hearn, C. P.↗

NASA NTRS1985

Microstrip termination effects on dielectric resonator filters

Dielectric resonator filters coupled to microstrip lines appear to answer the requirements of high performance and small size and weight that must be satisfied for use in satellite-based radiometers. The open-circuit and short-circuit types of coupling dielectric resonators to microstrip lines were compared with respect to radiation losses at various frequencies. The filters were fabricated from 1.6 mm Duroid board. The termination impedances for the microstrip lines were measured using a calibrated HP 8510 network analyzer. The values for radiation resistance obtained experimentally for both types of coupling agreed well with the values calculated from the Lewin theory (1960). It was found that the use of short-circuit coupling results in significantly reduced radiation resistance compared to the use of open-circuit lines. Improvement increases with increased frequency.

Trew, R. J.↗

NASA NTRS1972

Microwave device investigations

Materials, devices and novel schemes for generation, amplification and detection of microwave and millimeter wave energy are studied. Considered are: (1) Schottky-barrier microwave devices; (2) intermodulation products in IMPATT diode amplifiers; and (3) harmonic generation using Read diode varactors.

Choudhury, K. K. D.↗

NASA NTRS1972

Intermodulation characteristics of X-band IMPATT amplifiers.

Measurement of the intermodulation products produced when two equal amplitude signals are applied to the input of an X-band IMPATT diode amplifier. A Si p(+)nn(+) IMPATT diode was operated in a double-slug-tuned reflection amplifier circuit that was tuned to provide 20 dB of small-signal gain at 9.340 GHz. The intermodulation tests consist of measurements of the magnitudes and frequencies of the amplifier output signals as a function of the input signal drive levels and frequency separations. The gain and single-frequency characteristics of the amplifier were also measured and are used along with the theoretical device and circuit admittance characteristics as a basis for explanation of the intermodulation results. A low-frequency dominance mechanism is found to exist in which the low-frequency signals are amplified more than the high-frequency signals. This mechanism becomes more significant as the amplifier drive level is increased.

Trew, R. J.↗