Engineering topics

Topper, Alyson

Publications and source records attributed to Topper, Alyson.

7 records

NASA NTRS2020

RH1021BMH-10 Precision 10 V Reference Total Ionizing Dose Test Report

The purpose of this test was to validate the Analog Devices (ADI) RH1021BMH-10 flight lot for use in the fabrication of Europa Clipper Propulsion subsystem flight hardware. This test shall serve as the radiation lot acceptance test (RLAT) for this flight lot with wafer lot number 769658.1 and lot date code (LDC) 1430A. Low dose rate (LDR) irradiations were performed in this test so that the device susceptibility to enhanced low dose rate sensitivity (ELDRS) could be determined.

Casey, Megan↗

NASA NTRS2017

LM193 Dual Differential Comparator Total Ionizing Dose Test Report

The purpose of this test was to characterize the flight lot of Texas Instruments' LM193 (flight part number is 5962-9452601Q2A) for total dose response. This test served as the radiation lot acceptance test (RLAT) for the lot date code (LDC) tested. Low dose rate (LDR) irradiations were performed in this test so that the device susceptibility to enhanced low dose rate sensitivity (ELDRS) was determined.

enhanced low dose rate sensitivity (ELDRS↗

NASA NTRS2017

Silicon Power MOSFETs

Recent work for the NASA Electronic Parts and Packaging Program Power MOSFET task is presented. The Task technology focus, roadmap, and partners are given. Recent single-event effect test results on commercial, automotive, and radiation hardened trench power MOSFETs are summarized with an emphasis on risk of using commercial and automotive trench-gate power MOSFETs in space applications.

trench-gate MOSFET↗

NASA NTRS2017

Silicon Carbide Power Devices and Integrated Circuits

An overview of the NASA NEPP Program Silicon Carbide Power Device subtask is given, including the current task roadmap, partnerships, and future plans. Included are the Agency-wide efforts to promote development of single-event effect hardened SiC power devices for space applications.

single-event gate rupture (SEGR)↗

NASA NTRS2015

Silicon Carbide Power Device Performance Under Heavy-Ion Irradiation

Heavy-ion induced degradation and catastrophic failure data for SiC power MOSFETs and Schottky diodes are examined to provide insight into the challenge of single-event effect hardening of SiC power devices.

single-event effect↗

NASA NTRS2012

Evaluation of Low Dose Rate Sensitivity in Discrete Bipolar Junction Transistors

Chen, Dakai↗

NASA NTRS2012

Evaluation of Enhanced Low Dose Rate Sensitivity in Discrete Bipolar Junction Transistors

We evaluate the low dose rate sensitivity in several families of discrete bipolar transistors across device parameter, quality assurance level, and irradiation bias configuration. The 2N2222 showed the most significant low dose rate sensitivity, with low dose rate enhancement factor of 3.91 after 100 krad(Si). The 2N2907 also showed critical degradation levels. The devices irradiated at 10 mrad(Si)/s exceeded specifications after 40 and 50 krad(Si) for the 2N2222 and 2N2907 devices, respectively.

Chen, Dakai↗