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Tolmunen, T. J.

Publications and source records attributed to Tolmunen, T. J..

Current saturation in submillimeter wave varactors

In semiconductor devices the speed of electrons cannot exceed certain limits. This phenomenon will affect varactor multipliers as well as other high frequency devices where the RF current through the active part of the device is primarily displacement current. Hence, 'saturation' of the varactor output power is expected at some point. This phenomenon is discussed in some detail and shown to severely deteriorate the multiplier performance at higher frequencies. Single barrier varactors should have an advantage over GaAs Schottky diode varactors because they can be fabricated on InAs and stacked in a series array, allowing for lower current densities and higher power handling.

Kollberg, Erik L.↗

Modeling of planar varactor frequency multiplier devices with blocking barriers

Models for optimization of planar frequency triplers with symmetrical C-V curves are presented. Role and limitation of various blocking barriers (oxide, Mott, heterojunction) are discussed. Devices with undoped drift regions (BIN) have moderate efficiency but a broad range of power operation, whereas devices with doped drift regions (BNN) have high efficiency in a narrow power window. In particular, an upper power limit of the BNN is caused by electron velocity saturation. Implementations in SiO2/Si and AlAs/GaAs and means for increasing the power of BNN structures are considered.

Lieneweg, Udo↗