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Thieberger, P.

Publications and source records attributed to Thieberger, P..

Electron-Ion Collider Design Status

The Electron-Ion Collider (EIC) is being designed for construction at Brookhaven National Laboratory. Activities have been focused on beam-beam simulations, polarization studies, and beam dynamics, as well as on maturing the layout and lattice design of the constituent accelerators and the interaction region. The latest design advances will be presented.

43 PARTICLE ACCELERATORS↗

Gold-gold luminosity increase in RHIC for a beam energy scan with colliding beam energies extending below the nominal injection energy

The Beam Energy Scan phase II (BES-II), performed in the Relativistic Heavy Ion Collider (RHIC) from 2019 to 2021, explored the phase transition between quark-gluon plasma and hadronic gas. BES-II exceeded the goal of a fourfold increase in the average luminosity over that achieved during Beam Energy Scan phase I (BES-I), at five gold beam energies: 9.8, 7.3, 5.75, 4.59, and 3.85 GeV / nucleon. This was accomplished by addressing several beam dynamics effects, including intrabeam scattering, beam-beam, space charge, beam instability, and field errors induced by superconducting magnet persistent currents. Some of these effects are especially detrimental at low energies. BES-II achievements are presented, and the measures taken to improve RHIC performance are described. These measures span the whole RHIC complex, including ion beam sources, injectors, beam lifetime improvements in RHIC, and operation with the world’s first bunched beam Low Energy RHIC electron Cooler (LEReC).

43 PARTICLE ACCELERATORS↗

Single-Event Upset (SEU) model verification and threshold determination using heavy ions in a bipolar static RAM

Single-Event Upset (SEU) response of a bipolar low-power Schottky-diode-clamped TTL static RAM has been observed using Br ions in the 100-240 MeV energy range and O ions in the 20-100 MeV range. These data complete the experimental verification of circuit-simulation SEU modeling for this device. The threshold for onset of SEU has been observed by the variation of energy, ion species and angle of incidence. The results obtained from the computer circuit-simulation modeling and experimental model verification demonstrate a viable methodology for modeling SEU in bipolar integrated circuits.

Zoutendyk, J. A.↗