Engineering Papers⌕ Search

Engineering topics

Theofylaktos, N.

Publications and source records attributed to Theofylaktos, N..

4 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS2006

Dual Input AND Gate Fabricated From a Single Channel Poly (3-Hexylthiophene) Thin Film Field Effect Transistor

A regio-regular poly (3-hexylthiophene) (RRP3HT) thin film transistor having a split-gate architecture has been fabricated on a doped silicon/silicon nitride substrate and characterized. This device demonstrates AND logic functionality. The device functionality was controlled by applying either 0 or -10 V to each of the gate electrodes. When -10 V was simultaneously applied to both gates, the device was conductive (ON), while any other combination of gate voltages rendered the device resistive (OFF). The p-type carrier charge mobility was about 5x10(exp -4) per square centimeter per V-sec. The low mobility is attributed to the sharp contours of the RRP3HT film due to substrate non-planarity. A significant advantage of this architecture is that AND logic devices with multiple inputs can be fabricated using a single RRP3HT channel with multiple gates.

Pinto, N. J.↗
NASA NTRS2003

Electrospun Polyaniline/Polyethylene Oxide Nanofiber Field Effect Transistor

We report on the observation of field effect transistor (FET) behavior in electrospun camphorsulfonic acid doped polyaniline(PANi)/polyethylene oxide(PE0) nanofibers. Saturation channel currents are observed at surprisingly low source/drain voltages. The hole mobility in the depletion regime is 1.4 x 10(exp -4) sq cm/V s while the 1-D charge density (at zero gate bias) is calculated to be approximately 1 hole per 50 two-ring repeat units of polyaniline, consistent with the rather high channel conductivity (approx. 10(exp -3) S/cm). Reducing or eliminating the PEO content in the fiber is expected to enhance device parameters. Electrospinning is thus proposed as a simple method of fabricating 1-D polymer FET's.

Pinto, N. J.↗
NASA NTRS2003

Electrical Characterization and Morphological Studies of Conducting Polymer Nanofibers

Doped polyaniline blended with poly(ethylene oxide) has been electrospun in air to give fibers with diameters in the range 3 nm 200 nm. These fibers were captured on wafers of degenerately doped Si/SiO2 by placing the wafer in the path of the fiber jet formed during the electrospinning process. Individual fibers were contacted using shadow mask evaporation and were also captured on prepatterned wafers. Fibers having diameters greater than 100 nm show a slight increase in the conductivity as compared to the bulk film, while fibers with diameters less than 30 nm had lower conductivity than the bulk. Data on Scanning Conductance Microscopy along the length of individual fibers will be presented. For fibers where the diameter was not uniform, we found that below a certain diameter ( approx.15 nm) the fiber was less conducting as compared to thicker diameter fibers. Dependence of the fiber conductivity on a gate bias is underway and these results will also be presented.

Pinto, N. J.↗