Engineering topics
Publications and source records attributed to Thakoor, S..
Inspired by the world of insects and animals, the well-proven natural 'explorers' on this planet, this study is a fesibility assesment of building efficient and cost-effective 'microexplorers' for future NASA missions.
The objective of this study was to identify potentially useful cooperative behaviors for small space explorer systems that operate simultaneously.
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From overview: Current approach for realization of small vehicles is evolutionary: through the miniaturization1 of existing wheeled/legged vehicles based on state of the art in miniature actuators and motors. However, such miniaturization does not lend itself to cost reduction concomitant with the size reduction because cost of the individual mobility components goes up by an order of magnitude or more for such miniature motors etc. which often need to be precisely hand assembled. An alternate approach with significant potential advantages, especially when traversing unusual and difficult terrain such as loose granular surfaes, is to imitate the mobility attributes of insects.
The overall objective of the proposed effort is to develop a flexible microactuator based on tailored films of lead lanthanum zirconate titanate, PLZT (deposited on flexible substrates) and to demonstrate a multifold enhancement in its force/discplacement capabilities, compared to those of the current state-of-the-art actuators based on bulk ceramic materials.
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Photoresponse is a sensitive phenomenon that reflects the.
This paper describes a new two-capacitor memory cell configuration that provides an enhanced bipolar optoelectric response from the edges of the capacitor at incident power as low as ~ 2mW/micrometer squared.
The objective of this task was to critically assess the potential of the concept of.
Proposed optoelectronic system recognizes features or classifies images by processing outputs of photosensors rapidly, in parallel, through circuits developed in research on neural networks. Array of photoconductive elements serve as photomodulated connections in electronic neural network, which provides high speed data compression to generate feature vector. System able to "learn" new patterns for subsequent recognition. Potential applications in robotic vision systems and pattern recognition.
The fabrication and performance of WO3-based, solid-state, three-terminal device configurations as programmable analog memory elements are reported. These transistorlike device structures exhibit good resistance progammability with a remarkable resolution of a few percent of the resistive strength over a four orders of magnitude dynamic range. The most critical component of these devices is an insulating layer between the active WO3 and the cation donor layer. The progamming characteristics and operation mechanisms of the device are described, and probable reaction mechanisms critical to the device stability are discussed.
This paper reports on a tungsten-oxide-based, nonvolatile, electrically reprogrammable, variable resistance device as an analog synaptic memory connection for electronic neural networks. A voltage controlled, reversible injection of H(+) ions in electrochromic thin films of WO3 is utilized to modulate its resistance. A hygroscopic thin film of Cr2O3 is the source of H(+) ions. The resistance of the device can be tailored and stabilized over a wide dynamic range (about 4 orders of magnitude), and the programming speed is modulated by the control voltage. The suitability of such a device in terms of its response speed, reversibility, stability, and cyclability for its use in electronic neural networks is discussed.
The deposition of stoichiometric B1-crystal-structure (111) NbN films on glass or sapphire substrates by reactive dc magnetron sputtering is reported. High-purity Ar-N2 mixtures are used in the apparatus described by Thakoor et al. (1985), and typical deposition parameters are given as background pressure about 10 ntorr, voltage -325 V, current 1 A, deposition rate 1.35 nm/s, film thickness 500 nm, P(Ar) 5-17 mtorr, initial P(N2) 2-6 mtorr, and room temperature. The N2 consumption-injection characteristics are studied and found to control NbN formation using well-conditioned Nb targets. Films with transition temperatures 15-16 K are obtained at P(Ar) = 12.9 + or - 0.2 mtorr and P(N2) = 3.7 + or - 0.1 mtorr. SIS junctions of area about 0.001 sq cm fabricated using the NbN films are shown to have I-V characteristics with nonlinearity parameter about 110 and NbN superconducting-gap parameter Delta = about 2.8 meV.
Films with high superconducting transition temperatures deposited by reactive magnetron sputtering. Since deposition process does not involve significantly high substrate temperatures, employed to deposit counter electrode in superconductor/insulator/superconductor junction without causing any thermal or mechanical degradation of underlying delicate tunneling barrier. Substrates for room-temperature deposition of NbN polymeric or coated with photoresist, making films accessible to conventional lithographic patterning techniques. Further refinements in deposition technique yield films with smaller transition widths, Tc of which might approach predicted value of 18 K.
A cavity consisting of a superconducting lead film on a sapphire substrate has been fabricated to obtain the enhanced frequency stability possible with this configuration. The cavity exhibits a quality value Q exceeding 2 x 10 to the 9th in its TE011 mode with a resonant frequency of 2.689 GHz. Methods of fabrication and testing of the cavity are presented. Since the interface between the film and substrate is exposed ot the full value of the resonant magnetic field, the present experiment is the most sensitive test to date for enhanced losses at the interface itself. No evidence of such losses is used. In fact, the measured values of the surface resistance match very well predictions for RF losses based on the BCS theory.
The dc reactive magnetron sputtering process yields stoichiometric NbN films with superconducting transition temperature T(c) as high as 15.7 K on substrates as varied as glass, glazed ceramic, fused quartz, and sapphire. These films posses fcc (B1) structure and (111) texture. The most dominant factors governing the formation of the transition metal nitrides are the relative metal and nitrogen fluxes incident on the substrate and the background argon pressure (which dictates the overall reactive sites and residence times for nitrogen).