Engineering topics

Teverovsky, Alexander

Publications and source records attributed to Teverovsky, Alexander.

49 records · Page 3

NASA NTRS2008

Failures in Hybrid Microcircuits During Environmental Testing. History Cases

This purpose of this viewgraph presentation is to discuss failures in hermetic hybrids observed at the GSFC PA Lab during environmental stress testing. The cases discussed are: Case I. Substrate metallization failures during Thermal cycling (TC). Case II. Flex lid-induced failure. Case Ill. Hermeticity failures during TC. Case IV. Die metallization cracking during TC. and how many test cycles and parts is necessary? Case V. Wire Bond failures after life test. Case VI. Failures caused by Au/In IMC growth.

Teverovsky, Alexander↗

NASA NTRS2007

Reliability Effects of Surge Current Testing of Solid Tantalum Capacitors

Solid tantalum capacitors are widely used in space applications to filter low-frequency ripple currents in power supply circuits and stabilize DC voltages in the system. Tantalum capacitors manufactured per military specifications (MIL-PRF-55365) are established reliability components and have less than 0.001% of failures per 1000 hours (the failure rate is less than 10 FIT) for grades D or S, thus positioning these parts among electronic components with the highest reliability characteristics. Still, failures of tantalum capacitors do happen and when it occurs it might have catastrophic consequences for the system. This is due to a short-circuit failure mode, which might be damaging to a power supply, and also to the capability of tantalum capacitors with manganese cathodes to self-ignite when a failure occurs in low-impedance applications. During such a failure, a substantial amount of energy is released by exothermic reaction of the tantalum pellet with oxygen generated by the overheated manganese oxide cathode, resulting not only in destruction of the part, but also in damage of the board and surrounding components. A specific feature of tantalum capacitors, compared to ceramic parts, is a relatively large value of capacitance, which in contemporary low-size chip capacitors reaches dozens and hundreds of microfarads. This might result in so-called surge current or turn-on failures in the parts when the board is first powered up. Such a failure, which is considered as the most prevalent type of failures in tantalum capacitors [I], is due to fast changes of the voltage in the circuit, dV/dt, producing high surge current spikes, I(sub sp) = Cx(dV/dt), when current in the circuit is unrestricted. These spikes can reach hundreds of amperes and cause catastrophic failures in the system. The mechanism of surge current failures has not been understood completely yet, and different hypotheses were discussed in relevant literature. These include a sustained scintillation breakdown model [1-3]; electrical oscillations in circuits with a relatively high inductance [4-6]; local overheating of the cathode [5,7, 8]; mechanical damage to tantalum pentoxide dielectric caused by the impact of MnO2 crystals [2,9, 10]; or stress-induced-generation of electron traps caused by electromagnetic forces developed during current spikes [11]. A commonly accepted explanation of the surge current failures is that at unlimited current supply during surge current conditions, the self-healing mechanism in tantalum capacitors does not work, and what would be a minor scintillation spike if the current were limited, becomes a catastrophic failure of the part [l, 12]. However, our data show that the scintillation breakdown voltages are significantly greater that the surge current breakdown voltages, so it is still not clear why the part, which has no scintillations, would fail at the same voltage during surge current testing (SCT).

Teverovsky, Alexander↗

NASA NTRS2007

Effect of Temperature Cycling and Exposure to Extreme Temperatures on Reliability of Solid Tantalum Capacitors

In this work, results of multiple temperature cycling (TC) (up to 1,000 cycles) of different types of solid tantalum capacitors are analyzed and reported. Deformation of chip tantalum during temperature variations simulating reflow soldering conditions was measured to evaluate the possibility of the pop-corning effect in the parts. To simulate the effect of short-time exposures to solder reflow temperatures on the reliability of tantalum capacitors, several part types were subjected to multiple cycles (up to 100) between room temperature and 240 C with periodical measurements of electrical characteristics of the parts. Mechanisms of degradation caused by temperature cycling and exposure to high temperatures, and the requirements of MIL-PRF-55365 for assessment of the resistance of the parts to soldering heat are discussed.

Teverovsky, Alexander↗

NASA NTRS2006

Effect of High Temperature Storage in Vacuum, Air, and Humid Conditions on Degradation of Gold/Aluminum Wire Bonds in PEMs

Microcircuits encapsulated in three plastic package styles were stored in different environments at temperatures varying from 130 C to 225 C for up to 4,000 hours in some cases. To assess the effect of oxygen, the parts were aged at high temperatures in air and in vacuum chambers. The effect of humidity was evaluated during long-term highly accelerated temperature and humidity stress testing (HAST) at temperatures of 130 C and 150 C. High temperature storage testing of decapsulated microcircuits in air, vacuum, and HAST chambers was carried out to evaluate the role of molding compounds in the environmentally-induced degradation and failure of wire bonds (WB). This paper reports on accelerating factors of environment and molding compound on WB failures. It has been shown that all environments, including oxygen, moisture, and the presence of molding compounds reduce time-to-failures compared to unencapsulated devices in vacuum conditions. The mechanism of the environmental effect on KB degradation is discussed.

Teverovsky, Alexander↗

NASA NTRS2006

An Approach to Reliability Testing of Microcircuits at Cryogenic Conditions

This viewgraph presentation reviews an approach to testing microcircuits at cryogenic temperatures. Standard testing procedures are not adequate to test microcircuits that are to operate at cryogenic temperatures. It is therefore necessary to perform analysis of operation conditions and reliability conditions for planning qualification testing of microcircuits at cryogenic temperatures. The major degradations for microcircuits operating at low temperatures depend on the number of switching cycles rather than on the duration of part operation. Therefore instead of accelerating degradation of the parts by increasing the level of stress, the possibility of which is very limited at cryogenic temperatures, the reliability testing can be based on the number of switching cycles.

Teverovsky, Alexander↗

NASA NTRS2006

Performance and Reliability of Solid Tantalum Capacitors at Cryogenic Conditions

Performance of different types of solid tantalum capacitors was evaluated at room and low temperatures, down to 15 K. The effect of temperature on frequency dependencies of capacitance, effective series resistances (ESR), leakage currents, and breakdown voltages has been investigated and analyzed. To assess thermo-mechanical robustness of the parts, several groups of loose capacitors and those soldered on FR4 boards were subjected to multiple (up to 500) temperature cycles between room temperature and 77 K. Experiments and mathematical modeling have shown that degradation in tantalum capacitors at low temperatures is mostly due to increasing resistance of the manganese cathode layer, resulting in substantial decrease of the roll-off frequency. Absorption currents follow a power law, I approximately t(sup -m), with the exponent m varying from 0.8 to 1.1. These currents do not change significantly at cryogenic conditions and the value of the exponent remains the same down to 15 K. Variations of leakage currents with voltage can be described by Pool-Frenkel and Schottky mechanisms of conductivity, with the Schottky mechanism prevailing at cryogenic conditions. Breakdown voltages of tantalum capacitors increase and the probability of scintillations decreases at cryogenic temperatures. However, breakdown voltages measured during surge current testing decrease at liquid nitrogen (LN) compared to room-temperature conditions. Results of temperature cycling suggest that tantalum capacitors are capable of withstanding multiple exposures to cryogenic conditions, but the probability of failures varies for different part types.

Teverovsky, Alexander↗

NASA NTRS2006

Reliability Evaluation of Au/Al Wire Bonds in Commercial Microcircuits

The slide presentation provides an overview of research related to problems in quality evaluation in the mechanisms of wire bond degradation. Case studies presented examine the evaluation of reliability of hermetic and plastic microcircuits with suspected poor wire bonding. The authors conclude that in the cases when destructive physical analysis (DPA) or design evaluation indicate possible problems with wire bonding, a wire bond qualification testing may be required. This test should include high temperature storage (175 degrees C to 200 decrees C) of the parts with periodic measurements of contact resistances followed by internal examination and wire pull or ball sear testing.

Teverovsky, Alexander↗

NASA NTRS2004

Application of Thermo-Mechanical Measurements of Plastic Packages for Reliability Evaluation of PEMS

Thermo-mechanical analysis (TMA) is typically employed for measurements of the glass transition temperature (Tg) and coefficients of thermal expansion (CTE) in molding compounds used in plastic encapsulated microcircuits (PEMs). Application of TMA measurements directly to PEMs allows anomalies to be revealed in deformation of packages with temperature, and thus indicates possible reliability concerns related to thermo-mechanical integrity and stability of the devices. In this work, temperature dependencies of package deformation were measured in several types of PEMs that failed environmental stress testing including temperature cycling, highly accelerated stress testing (HAST) in humid environments, and bum-in (BI) testing. Comparison of thermo-mechanical characteristics of packages and molding compounds in the failed parts allowed for explanation of the observed failures. The results indicate that TMA of plastic packages might be used for quality evaluation of PEMs intended for high-reliability applications.

Sharma, Ashok K.↗

NASA NTRS2003

PEM-INST-001: Instructions for Plastic Encapsulated Microcircuit (PEM) Selection, Screening, and Qualification

Potential users of plastic encapsulated microcircuits (PEMs) need to be reminded that unlike the military system of producing robust high-reliability microcircuits that are designed to perform acceptably in a variety of harsh environments, PEMs are primarily designed for use in benign environments where equipment is easily accessed for repair or replacement. The methods of analysis applied to military products to demonstrate high reliability cannot always be applied to PEMs. This makes it difficult for users to characterize PEMs for two reasons: 1. Due to the major differences in design and construction, the standard test practices used to ensure that military devices are robust and have high reliability often cannot be applied to PEMs that have a smaller operating temperature range and are typically more frail and susceptible to moisture absorption. In contrast, high-reliability military microcircuits usually utilize large, robust, high-temperature packages that are hermetically sealed. 2. Unlike the military high-reliability system, users of PEMs have little visibility into commercial manufacturers proprietary design, materials, die traceability, and production processes and procedures. There is no central authority that monitors PEM commercial product for quality, and there are no controls in place that can be imposed across all commercial manufacturers to provide confidence to high-reliability users that a common acceptable level of quality exists for all PEMs manufacturers. Consequently, there is no guaranteed control over the type of reliability that is built into commercial product, and there is no guarantee that different lots from the same manufacturer are equally acceptable. And regarding application, there is no guarantee that commercial products intended for use in benign environments will provide acceptable performance and reliability in harsh space environments. The qualification and screening processes contained in this document are intended to detect poor-quality lots and screen out early random failures from use in space flight hardware. However, since it cannot be guaranteed that quality was designed and built into PEMs that are appropriate for space applications, users cannot screen in quality that may not exist. It must be understood that due to the variety of materials, processes, and technologies used to design and produce PEMs, this test process may not accelerate and detect all failure mechanisms. While the tests herein will increase user confidence that PEMs with otherwise unknown reliability can be used in space environments, such testing may not guarantee the same level of reliability offered by military microcircuits. PEMs should only be used where due to performance needs there are no alternatives in the military high-reliability market, and projects are willing to accept higher risk.

Teverovsky, Alexander↗

NASA NTRS2002

Instructions for Plastic Encapsulated Microcircuit(PEM) Selection, Screening and Qualification.

The use of Plastic Encapsulated Microcircuits (PEMs) is permitted on NASA Goddard Space Flight Center (GSFC) spaceflight applications, provided each use is thoroughly evaluated for thermal, mechanical, and radiation implications of the specific application and found to meet mission requirements. PEMs shall be selected for their functional advantage and availability, not for cost saving; the steps necessary to ensure reliability usually negate any initial apparent cost advantage. A PEM shall not be substituted for a form, fit and functional equivalent, high reliability, hermetic device in spaceflight applications. Due to the rapid change in wafer-level designs typical of commercial parts and the unknown traceability between packaging lots and wafer lots, lot specific testing is required for PEMs, unless specifically excepted by the Mission Assurance Requirements (MAR) for the project. Lot specific qualification, screening, radiation hardness assurance analysis and/or testing, shall be consistent with the required reliability level as defined in the MAR. Developers proposing to use PEMs shall address the following items in their Performance Assurance Implementation Plan: source selection (manufacturers and distributors), storage conditions for all stages of use, packing, shipping and handling, electrostatic discharge (ESD), screening and qualification testing, derating, radiation hardness assurance, test house selection and control, data collection and retention.

King, Terry↗

NASA NTRS2002

Evaluation of Data Retention and Imprint Characteristics of FRAMs Under Environmental Stresses for NASA Applications

A major reliability issue for all advanced nonvolatile memory (NVM) technology devices including FRAMs is the data retention characteristics over extended period of time, under environmental stresses and exposure to total ionizing dose (TID) radiation effects. For this testing, 256 Kb FRAMs in 28-pin plastic DIPS, rated for industrial grade temperature range of -40 C to +85 C, were procured. These are two-transistor, two-capacitor (2T-2C) design FRAMs. In addition to data retention characteristics, the parts were also evaluated for imprint failures, which are defined as the failure of cells to change from a "preferred" state, where it has been for a significant period of time to an opposite state (e.g., from 1 to 0, or 0 to 1). These 256 K FRAMs were subjected to scanning acoustic microscopy (C-SAM); 1,000 temperature cycles from -65 C to +150 C; high temperature aging at 150 C, 175 C, and 200 C for 1,000 hours; highly accelerated stress test (HAST) for 500 hours; 1,000 hours of operational life test at 125 C; and total ionizing dose radiation testing. As a preconditioning, 10 K read/write cycles were performed on all devices. Interim electrical measurements were performed throughout this characterization, including special imprint testing and final electrical testing. Some failures were observed during high temperature aging test at 200 C, during HAST testing, and during 1,000 hours of operational life at 125 C. The parts passed 10 Krad exposure, but began showing power supply current increases during the dose increment from 10 Krad to 30 Krad, and at 40 Krad severe data retention and parametric failures were observed. Failures from various environmental group testing are currently being analyzed.

Sharma, Asbok K.↗

NASA NTRS2001

Evaluation of Data Retention Characteristics for Ferroelectric Random Access Memories (FRAMs)

Data retention and fatigue characteristics of 64 Kb lead zirconate titanate (PZT)-based Ferroelectric Random Access Memories (FRAMs) microcircuits manufactured by Ramtron were examined over temperature range from -85 C to +310 C for ceramic packaged parts and from -85 C to +175 C for plastic parts, during retention periods up to several thousand hours. Intrinsic failures, which were caused by a thermal degradation of the ferroelectric cells, occurred in ceramic parts after tens or hundreds hours of aging at temperatures above 200 C. The activation energy of the retention test failures was 1.05 eV and the extrapolated mean-time-to-failure (MTTF) at room temperature was estimated to be more than 280 years. Multiple write-read cycling (up to 3x10(exp 7)) during the fatigue testing of plastic and ceramic parts did not result in any parametric or functional failures. However, operational currents linearly decreased with the logarithm of number of cycles thus indicating fatigue process in PZT films. Plastic parts, that had more recent date code as compared to ceramic parts, appeared to be using die with improved process technology and showed significantly smaller changes in operational currents and data access times.

Sharma, Ashok K.↗

NASA NTRS2000

Evaluation of Data Retention and Imprint Characteristics of FRAMs Under Environmental Stresses for NASA Applications

A major reliability issue for all advanced nonvolatile memory (NVM) technology devices including FRAMs (Ferroelectric random access memories) is the data retention characteristics over extended period of time, under environmental stresses and exposure to total ionizing dose (TID) radiation effects. For this testing, 256 Kb FRAMs in 28-pin plastic DIPS, rated for industrial grade temperature range of -40 C to +85 C, were procured. These are two-transistor, two-capacitor (2T-2C) design FRAMs. In addition to data retention characteristics, the parts were also evaluated for imprint failures, which are defined as the failure of cells to change from a "preferred" state, where it has been for a significant period of time to an opposite state (e.g., from 1 to 0, or 0 to 1). These 256 K FRAMs were subjected to scanning acoustic microscopy (C-SAM); 1,000 temperature cycles from -65 C to +150 C; high temperature aging at 150 C, 175 C, and 200 C for 1,000 hours; highly accelerated stress test (HAST) for 500 hours; 1,000 hours of operational life test at 125 C; and total ionizing dose radiation testing. As a preconditioning, 10 K read/write cycles were performed on all devices. Interim electrical measurements were performed throughout this characterization, including special imprint testing and final electrical testing. Some failures were observed during high temperature aging test at 200 C, during HAST testing, and during 1,000 hours of operational life at 125 C. The parts passed 10 Krad exposure, but began showing power supply current increases during the dose increment from 10 Krad to 30 Krad, and at 40 Krad severe data retention and parametric failures were observed. Failures from various environmental group testing are currently being analyzed.

Sharma, Ashok K.↗