Engineering topics
Publications and source records attributed to Szabo, Carl.
Single-Event Effects (SEE) testing was conducted on the AMD Ryzen 3 1200 microprocessor. Testing was conducted at Massachusetts General Hospital's (MGH) Francis H. Burr Proton Therapy Center on June 2nd, 2019.
Single-Event Effects (SEE) testing was conducted on the AMD Ryzen 3 2200G microprocessor with integrated graphics. Testing was conducted at Massachusetts General Hospital's (MGH) Francis H. Burr Proton Therapy Center on June 2nd, 2019.
While some Graphical Processing Units (GPUs) are discrete components (i.e.GTX1050), others take the form of an IP block or embedded engine within a System on Chip (SoC) device such as the Qualcomm Snapdragon"TM" 820 which contains a Qualcomm Adreno"TM" 530 GPU. Within this device are various functional blocks which can be exercised with software payloads. NVidia's Jetson"TM" TX1 SoC is provided on a System on Module (SOM). Within it are Central Processing Unit (CPU) cores and an nVidia GPU which can be accessed similarly to a discrete GPU coprocessor. While the packaging is different, each one of these GPUs needs to be tested using the same standardized code.
A standardized test method has been created to characterize and stress graphics processing units (GPU) during radiation effects testing.
In this study the 14 nm Intel Broadwell 5th generation core series 5005U-i3 and 5200U-i5 was mounted on Dell Inspiron laptops, MSI Cubi and Gigabyte Brix barebones and tested with Windows 8 and CentOS7 at idle. Heavy-ion-induced hard- and catastrophic failures do not appear to be related to the Intel 14nm Tri-Gate FinFET process. They originate from a small (9 m 140 m) area on the 32nm planar PCH die (not the CPU) as initially speculated. The hard failures seem to be due to a SEE but the exact physical mechanism has yet to be identified. Some possibilities include latch-ups, charge ion trapping or implantation, ion channels, or a combination of those (in biased conditions). The mechanism of the catastrophic failures seems related to the presence of electric power (1.05V core voltage). The 1064 nm laser mimics ionization radiation and induces soft- and hard failures as a direct result of electron-hole pair production, not heat. The 14nm FinFET processes continue to look promising for space radiation environments.