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Swift, G.

Publications and source records attributed to Swift, G..

At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS2002

Inadvertently programmed bits in Samsung 128 Mbit flash devices: a flaky investigation

JPL's X2000 avionics design pioneers new territory by specifying a non-volatile memory (NVM) board based on flash memories. The Samsung 128Mb device chosen was found to demonstrate bit errors (mostly program disturbs) and block-erase failures that increase with cycling. Low temperature, certain pseudo- random patterns, and, probably, higher bias increase the observable bit errors. An experiment was conducted to determine the wearout dependence of the bit errors to 100k cycles at cold temperature using flight-lot devices (some pre-irradiated). The results show an exponential growth rate, a wide part-to-part variation, and some annealing behavior.

flash memory program disturb wearout erase fail re↗
NASA NTRS2002

Dosimetry and microdosimetry using COTS ICs: A comparative study

A new method using an array of MOS transistors formeasuring dose absorbed from ionizing radiation is compared to previous dosimetric methods., The accuracy and precision of dosimetry based on COTS SRAMs, DRAMs, and WPROMs are compared and contrasted. Applications of these devices in various space missions will be discussed. TID results are presented for this summary and microdosimetricresults will be added to the full paper. Finally, an analysis of the optimal condition for a digital dosimeter will be presented.

microdosimetry↗
NASA NTRS2002

Single event upset susceptibility testing of the Xilinx Virtex II FPGA

Heavy ion testing of the Xilinx Virtex IZ was conducted on the configuration, block RAM and user flip flop cells to determine their single event upset susceptibility using LETs of 1.2 to 60 MeVcm^2/mg. A software program specifically designed to count errors in the FPGA is used to reveal L1/e values and single-event-functional interrupt failures.

FPGA Xilinx Virtex static test single event upset↗
NASA NTRS2002

SEE and TID extension testing of the Xilinx XQR18V04 4Mbit radiation hardened configuration PROM

The XQR18V04 was evaluated for single event upset rates using proton and heavy ions. The PROM was demonstrated to be immune to latch-up, as well as to static upset in the flash memory cells, to an LET > 125 MeV/mg/cmz (effective). The PROM was also tested in a dynamic mode, which revealed three distinct error modes: Read Bit Errors, Address Errors, and a Single Event Functional Interrupt (SEW which affected the data output drivers. Saturation cross-sections, and onset thresholds, for these errorinodes were measured at the heavy ion facility at Texas A&M University, and the proton facility at UC Davis. Additional testing was performed at UC Davis and the Cobalt 60 source at McClellan Air Force Base to examine the effect to TID life as a function of power biasing. The PROM demonstrated a 100% improvement in total TID life with an 84% percent decrease in device usage.

FPGA Virtex II SEU↗
NASA NTRS2002

Dose measurement based on threshold shift in MOSFET arrays in commercial SRAMS

A new method using an array of MOS transistors isdescribed for measuring dose absorbed from ionizingradiation. Using the array of MOSFETs in a SRAM, a direct measurement of the number of MOS cells which change as a function of applied bias on the SRAM. Since the input and output of a SRAM used as a dosimeter is completely digital, the measurement of dose is easily accessible by a remote processing system.

SRAM dosimetry microdosimetry threshold shift↗
NASA NTRS2000

In-flight observations of multiple-bit upset in DRAMs

In-flight data is examined showing a very high incidence of multiple-bit errors in a solid-state recorder that incorporates error detection and correction. The high MBU rate is shown to be a consequence of the physical selection of memory cell locations in the recorder architecture.

single↗