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Swartz, C. K.

Publications and source records attributed to Swartz, C. K..

At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
NASA NTRS1987

Radiation and temperature effects in gallium arsenide, indium phosphide and silicon solar cells

The effects of radiation on performance are determined for both n(+)p and p(+)n GaAs and InP cells and for silicon n(+)p cells. It is found that the radiation resistance of InP is greater than that of both GaAs and Si under 1 MeV electron irradiation. For silicon, the observed decreased radiation resistance with decreased resistivity is attributed to the presence of a radiation induced boron-oxygen defect. Comparison of radiation damage in both p(+)n and n(+)p GaAs cells yields a decreased radiation resistance for the n(+)p cell attributable to increased series resistance, decreased shunt resistance, and relatively greater losses in the cell's p-region. For InP, the n(+)p configuration is found to have greater radiation resistance than the p(+)n cell. The increased loss in this latter cell is attributed to losses in the cell's emitter region. Temperature dependency results are interpreted using a theoretical relation for dVoc/cT which predicts that increased Voc should results in decreased numerical values for dPm/dT. The predicted correlation is observed for GaAs but not for InP a result which is attributed to variations in cell processing.

Weinberg, I.↗
NASA NTRS1987

Radiation and temperature effects in gallium arsenide, indium phosphide, and silicon solar cells

The effects of radiation on performance are determined for both n+p and p+n GaAs and InP cells and for silicon n+p cells. It is found that the radiation resistance of InP is greater than that of both GaAs and Si under 1-MeV electron irradiation. For silicon, the observed decreased radiation resistance with decreased resistivity is attributed to the presence of a radiation-induced boron-oxygen defect. Comparison of radiation damage in both p+n and n+p GaAs cells yields a decreased radiation resistance for the n+p cell attributable to increased series resistance, decreased shunt resistance, and relatively greater losses in the cell's p-region. For InP, the n+p configuration is found to have greater radiation resistance than the p+n cell. The increased loss in this latter cell is attributed to losses in the cell's emitter region. Temperature dependency results are interpreted using a theoretical relation for dVoc/dT, which predicts that increased Voc should result in decreased numerical values for dPm/dT. The predicted correlation is observed for GaAs but not for InP, a result which is attributed to variations in cell processing.

Weinberg, I.↗
NASA NTRS1987

Radiation performance of AlGaAs and InGaAs concentrator cells and expected performance of cascade structures

Aluminum gallium arsenide, GaAs, silicon and InGaAs cells have been irradiated with 1-MeV electrons and 37-MeV protons. These cells are candidates for individual cells in a cascade structure. Data are presented for both electron and proton irradiation studies for one sun and a concentration level of 100X AM0. Results of calculations on the radiation resistance of cascade cell structures based on the individual cell data are also presented. Both series-connected and separately connected structures are investigated.

Curtis, H. B.↗
NASA NTRS1986

Radiation damage in proton irradiated indium phosphide solar cells

Indium phosphide solar cells exposed to 10 MeV proton irradiations were found to have significantly greater radiation resistance than either GaAs or Si. Performance predictions were obtained for two proton dominated orbits and one in which both protons and electrons were significant cell degradation factors. Array specific power was calculated using lightweight blanket technology, a SEP array structure, and projected cell efficiencies. Results indicate that arrays using fully developed InP cells should out-perform those using GaAs or Si in orbits where radiation is a significant cell degradation factor.

Weinberg, I.↗
NASA NTRS1986

Cell performance and defect behavior in proton-irradiated lithium-counterdoped n(+)p silicon solar cells

Lithium-counterdoped n(+)p silicon solar cells were irradiated by 10-MeV protons, and their performance was determined as a function of fluence. It was found that the cell with the highest lithium concentration exhibited the higher radiation resistance. Deep-level transient spectroscopy studies of deep-level defects were used to identify two lithium-related defects. Defect energy levels obtained after the present 10-MeV irradiations were found to be markedly different than those observed after previous 1-MeV electron irradiations. However, the present DLTS data are consistent with previous suggestion by Weinberg et al. (1984) of a lithium-oxygen interaction which tends to inhibit formation of an interstitial boron-oxygen defect.

Weinberg, I.↗
NASA NTRS1985

Performance and temperature dependencies of proton irradiated n/p GaAs and n/p silicon cells

The n/p homojunction GaAs cell is found to be more radiation resistant than p/nheteroface GaAs under 10 MeV proton irradiation. Both GaAs cell types outperform conventional silicon n/p cells under the same conditions. An increase temperature dependency of maximum power for the GaAs n/p cells is attributed largely to differences in Voc between the two GaAs cell types. These results and diffusion length considerations are consistent with the conclusion that p-type GaAs is more radiation resistant than n-type and therefore that the n/p configuration is possibly favored for use in the space radiation environment. However, it is concluded that additional work is required in order to choose between the two GaAs cell configurations.

Weinberg, I.↗
NASA NTRS1985

Potential for use of indium phosphide solar cells in the space radiation environment

Indium phosphide solar cells were observed to have significantly higher radiation resistance than either GaAs or Si after exposure to 10 MeV proton irradiation data and previous 1 MeV electron data together with projected efficiencies for InP, it was found that these latter cells produced more output power than either GaAs or Si after specified fluences of 10 MeV protons and 1 MeV electrons. Estimates of expected performance in a proton dominated space orbit yielded much less degradation for InP when compared to the remaining two cell types. It was concluded that, with additional development to increase efficiency, InP solar cells would perform significantly better than either GaAs or Si in the space radiation environment.

Weinberg, I.↗
NASA NTRS1985

Radiation damage in high-resistivity silicon solar cells

High-resistivity silicon solar cells exhibit reduced radiation damage when light is incident on the gridded back surface. Under back illumination, radiation damage decreases as cell resistivity increases; under front illumination, radiation damage increases as cell resistivity increases. Thin back-illuminated cells outperform conventional 10 omega cm 50 and 200 micron cells at low 1-MeV electron fluences. However, at higher fluences, the conventional cells exhibit superior radiation resistance. This is attributed to the low BOL diffusion lengths observed in the thin, sack-illuminated cell. These results are discussed in terms of injected charge distributions, electric fields in the cell base, and the effects of a dominant boron-oxygen defect.

Weinberg, I.↗
NASA NTRS1985

Performance of Hughes GaAs concentrator cells under 1-MeV electron irradiation

Several Hughes gallium arsenide (GaAs) concentrator cells were exposed to 1-MeV electrons at fluences up to 1x10 to the 15th power electrons/sq cm. Performance data were taken after several fluences, at two temperatures, and at concentration levels from 1 to approx. 150x AMO. Data at 1 sun and 25 deg C were taken with an X-25 xenon-lamp solar simulator. Data at concentration were taken using a pulsed solar simulator with the assumption of a linear relationship between short-circuit current and irradiance. The cells are 5 by 5 mm with a 4-mm diameter illuminated area.

Curtis, H. B.↗
NASA NTRS1985

Performance and temperature dependencies of proton irradiated n/p and p/n GaAs and n/p silicon cells

n/p homojunction GaAs cells are found to be more radiation resistant than p/n heteroface GaAs under 10 MeV proton irradiation. Both GaAs cell types outperform conventional silicon n/p cells under the same conditions. An increased temperature dependency of maximum power for the GaAs n/p cells is attributed to differences in Voc between the two GaAs cell types. These results and diffusion length considerations are consistent with the conclusion that p-type GaAs is more radiation resistant than n-type and therefore that the n/p configuration is possibly favored for use in the space radiation environment. However, it is concluded that additional work is required in order to choose between the two GaAs cell configurations.

Weinberg, I.↗
NASA NTRS1985

Performance of GaAs and silicon concentrator cells under 1 MeV electron irradiation

Gallium arsenide concentrator cells from three sources and silicon concentrator cells from one source were exposed to 1 MeV electrons at fluences up to 1 x 10 to the 15th electrons per square cm. Performance data were taken after several fluences, at two temperatures (25 and 80 C), and at concentration levels from 1 to about 150X AM0. Data at one sun and 25 C were taken with an X-25 xenon lamp solar simulator. Data at concentrations were taken using a pulsed solar simulator with the assumption of a linear relationship between short-circuit current and irradiance. The cells are 5 mm x 5 mm with a 4 mm diameter illuminated area.

Curtis, H. B.↗
NASA NTRS1985

Potential for use of InP solar cells in the space radiation environment

Indium phosphide solar cells were observed to have significantly higher radiation resistance than either GaAs or Si after exposure to 10 MeV proton irradiation data and previous 1 MeV electron data together with projected efficiencies for InP, it was found that these latter cells produced more output power than either GaAs or Si after specified fluences of 10 MeV protons and 1 MeV electrons. Estimates of expected performance in a proton dominated space orbit yielded much less degradation for InP when compared to the remaining two cell types. It was concluded that, with additional development to increase efficiency, InP solar cells would perform significantly better than either GaAs or Si in the space radiation environment.

Weinberg, I.↗
NASA NTRS1984

Increased radiation resistance in lithium-counterdoped silicon solar cells

Lithium-counterdoped n(+)p silicon solar cells are found to exhibit significantly increased radiation resistance to 1-MeV electron irradiation when compared to boron-doped n(+)p silicon solar cells. In addition to improved radiation resistance, considerable damage recovery by annealing is observed in the counterdoped cells at T less than or equal to 100 C. Deep level transient spectroscopy measurements are used to identify the defect whose removal results in the low-temperature aneal. It is suggested that the increased radiation resistance of the counterdoped cells is primarily due to interaction of the lithium with interstitial oxygen.

Weinberg, I.↗
NASA NTRS1984

Voltage controlling mechanisms in low resistivity silicon solar cells: A unified approach

An experimental technique capable of resolving the dark saturation current into its base and emitter components is used as the basis of an analysis in which the voltage limiting mechanisms were determined for a variety of high voltage, low resistivity silicon solar cells. The cells studied include the University of Florida hi-low emitter cell, the NASA and the COMSAT multi-step diffused cells, the Spire Corporation ion-implanted emitter cell, and the University of New South Wales MINMIS and MINP cells. The results proved to be, in general, at variance with prior expectations. Most surprising was the finding that the MINP and the MINMIS voltage improvements are due, to a considerable extent, to a previously unrecognized optimization of the base component of the saturation current. This result is substantiated by an independent analysis of the material used to fabricate these devices.

Weizer, V. G.↗
NASA NTRS1984

Radiation damage and defect behavior in ion-implanted, lithium counterdoped silicon solar cells

Boron doped silicon n+p solar cells were counterdoped with lithium by ion implanation and the resultant n+p cells irradiated by 1 MeV electrons. The function of fluence and a Deep Level Transient Spectroscopy (DLTS) was studied to correlate defect behavior with cell performance. It was found that the lithium counterdoped cells exhibited significantly increased radiation resistance when compared to boron doped control cells. It is concluded that the annealing behavior is controlled by dissociation and recombination of defects. The DLTS studies show that counterdoping with lithium eliminates at least three deep level defects and results in three new defects. It is speculated that the increased radiation resistance of the counterdoped cells is due primarily to the interaction of lithium with oxygen, single vacancies and divacancies and that the lithium-oxygen interaction is the most effective in contributing to the increased radiation resistance.

Weinberg, I.↗
NASA NTRS1984

Radiation tolerance of low resistivity, high voltage silicon solar cells

The radiation tolerance of the following three low resistivity, high voltage silicon solar cells was investigated: (1) the COMSAT MSD (multi-step diffused) cell, (2) the MinMIS cell, and (3) the MIND cell. A description of these solar cells is given along with drawings of their configurations. The diffusion length damage coefficients for the cells were calculated and presented. Solar cell spectral response was also discussed. Cells of the MinMIS type were judged to be unsuitable for use in the space radiation environment.

Weizer, V. G.↗
NASA NTRS1984

Cell and defect behavior in lithium-counterdoped solar cells

Some n(+)/p cells in which lithium is introduced as a counterdopant, by ion-implantation, into the cell's boron-doped p-region were studied. To determine if the cells radiation resistance could be significantly improved by lithium counterdoping. Defect behavior was related to cell performance using deep level transient spectroscopy. Results indicate a significantly increased radiation resistance for the lithium counterdoped cells when compared to the boron doped 1 ohm-cm control cell. The increased radiation resistance of the lithium counterdoped cells is due to the complexing of lithium with divacancies and boron. It is speculated that complexing with oxygen and single vacancies also contributes to the increased radiation resistance. Counterdoping silicon with lithium results in a different set of defects.

Weinberg, I.↗