Engineering topics
Publications and source records attributed to Strauss, Karl.
We report for the first time the successful integration of Strontium-Bismuth-Tantalate ferroelectric capacitors on an SOI Substrate. We have verified that the unique processing requirements of SBT capacitors does not affect the properties of the surrounding FD-SOI transistors, and, conversely, we have verified that the SOI processing does not affect the quality of the SBT capacitors.
This publication contains the proceedings for the Non-Volatile Memory Technology Symposium 2001 that was held on November 7-8, 2001 in San Diego, CA. The proceedings contains a a wide range of papers that cover current and new memory technologies including Flash memories, Magnetic Random Access Memories (MRAM and GMRAM), Ferro-electric RAM (FeRAM), and Chalcogenide RAM (CRAM). The papers presented in the proceedings address the use of these technologies for space applications as well as radiation effects and packaging issues.
This viewgraph presentation gives an overview of the Europa Orbiter's mass memory requirements and status. Details are given on the challenge of the mission to Europa, baseline size requirements, implementations considered, candidate technologies, prime technologies and methodology, and a proposed solution and implementation. Flash and non-volatile memory technologies are described.