Engineering topics
Stevenson, T.
Publications and source records attributed to Stevenson, T..
MgB2 Thin-Film Bolometer for Applications in Far-Infrared Instruments on Future Planetary Missions
A SiN membrane based MgB2 thin-film bolometer, with a non-optimized absorber, has been fabricated that shows an electrical noise equivalent power of 256 fW/square root Hz operating at 30 Hz in the 8.5 - 12.35 micron spectral bandpass. This value corresponds to an electrical specific detectivity of 7.6 x 10(exp 10) cm square root Hz/W. The bolometer shows a measured blackbody (optical) specific detectivity of 8.8 x 10(exp 9) cm square root Hz/W, with a responsivity of 701.5 kV/W and a first-order time constant of 5.2 ms. It is predicted that with the inclusion of a gold black absorber that a blackbody specific detectivity of 6.4 x 10(exp 10) cm/square root Hz/W at an operational frequency of 10 Hz, can be realized for integration into future planetary exploration instrumentation where high sensitivity is required in the 17 - 250 micron spectral wavelength range.
Mu-Spec - A High Performance Ultra-Compact Photon Counting spectrometer for Space Submillimeter Astronomy
We have designed and are testing elements of a fully integrated submillimeter spectrometer based on superconducting microstrip technology. The instrument can offer resolving power R approximately 1500, and its high frequency cutoff is set by the gap of available high performance superconductors. All functions of the spectrometer are integrated - light is coupled to the microstrip circuit with a planar antenna, the spectra discrimination is achieved using a synthetic grating, orders are separated using planar filter, and detected using photon counting MKID detector. This spectrometer promises to revolutionize submillimeter spectroscopy from space. It replaces instruments with the scale of 1m with a spectrometer on a 10 cm Si wafer. The reduction in mass and volume promises a much higher performance system within available resource in a space mission. We will describe the system and the performance of the components that have been fabricated and tested.
l/f Noise in the Superconducting Transition of a MgB2 Thin Film
The noise voltage spectral density in the superconducting transition of a MgB2 thin film on a SiN-coated Si thick substrate was measured over the frequency range 1 Hz-to-1 KHz. Using established bolometer noise theory the theoretical noise components due to Johnson, 1/f(excess) and phonon noise are modeled to the measured data. It is shown that for the case of a MgB2 thin film in the vicinity of the mid-point of transition, coupled to a heat sink via a fairly high thermal conductance (approximately equal to 10(sup -1) W/K)) that the measured noise voltage spectrum is 1/f limited and exhibits lit dependence with a varying between 0.3 and 0.5 in the measured frequency range. At a video frame rate frequency of 30 Hz the measured noise voltage density in the film is approximately equal to 61 nV /the square root of HZ, using this value an upper limit of electrical NEP approximately equal to 0.67pW / the square root of Hz is implied for a practical MgB2 bolometer operating at 36.1 K.
2D Array of Far-infrared Thermal Detectors: Noise Measurements and Processing Issues
A magnesium diboride (MgB2) detector 2D array for use in future space-based spectrometers is being developed at GSFC. Expected pixel sensitivities and comparison to current state-of-the-art infrared (IR) detectors will be discussed.
A Detector for Cosmic Microwave Background Polarimetry
We present preliminary design and development work on polarized detectors intended to enable Cosmic Microwave Background polarization measurements that will probe the first moments of the universe. The ultimate measurement will be challenging, requiring background-limited detectors and good control of systematic errors. Toward this end, we are integrating the beam control of HE-11 feedhorns with the sensitivity of transition-edge sensors. The coupling between these two devices is achieved via waveguide probe antennas and superconducting microstrip lines. This implementation allows band-pass filters to be incorporated on the detector chip. We believe that a large collection of single-mode polarized detectors will eventually be required for the reliable detection of the weak polarized signature that is expected to result from gravitational waves produced by cosmic inflation. This focal plane prototype is an important step along the path to this detection, resulting in a capability that will enable various future high performance instrument concepts.
Cosmic Microwave Background Polarization Detector with High Efficiency, Broad Bandwidth, and Highly Symmetric Coupling to Transition Edge Sensor Bolometers
Four probe antennas transfer signals from waveguide to microstrip lines. The probes not only provide broadband impedance matching, but also thermally isolate waveguide and detector. In addition, we developed a new photonic waveguide choke joint design, with four-fold symmetry, to suppress power leakage at the interface. We have developed facilities to test superconducting circuit elements using a cryogenic microwave probe station, and more complete systems in waveguide. We used the ring resonator shown below to measure a dielectric loss tangent < 7x10(exp -4) over 10 - 45 GHz. We have combined component simulations to predict the overall coupling from waveguide modes to bolometers. The result below shows the planar circuit and waveguide interface can utilize the high beam symmetry of HE11 circular feedhorns with > 99% coupling efficiency over 30% fractional bandwidth.
Implanted Silicon Resistor Layers for Efficient Terahertz Absorption
Broadband absorption structures are an essential component of large format bolometer arrays for imaging GHz and THz radiation. We have measured electrical and optical properties of implanted silicon resistor layers designed to be suitable for these absorbers. Implanted resistors offer a low-film-stress, buried absorber that is robust to longterm aging, temperature, and subsequent metals processing. Such an absorber layer is readily integrated with superconducting integrated circuits and standard micromachining as demonstrated by the SCUBA II array built by ROE/NIST (1). We present a complete characterization of these layers, demonstrating frequency regimes in which different recipes will be suitable for absorbers. Single layer thin film coatings have been demonstrated as effective absorbers at certain wavelengths including semimetal (2,3), thin metal (4), and patterned metal films (5,6). Astronomical instrument examples include the SHARC II instrument is imaging the submillimeter band using passivated Bi semimetal films and the HAWC instrument for SOFIA, which employs ultrathin metal films to span 1-3 THz. Patterned metal films on spiderweb bolometers have also been proposed for broadband detection. In each case, the absorber structure matches the impedance of free space for optimal absorption in the detector configuration (typically 157 Ohms per square for high absorption with a single or 377 Ohms per square in a resonant cavity or quarter wave backshort). Resonant structures with -20% bandwidth coupled to bolometers are also under development; stacks of such structures may take advantage of instruments imaging over a wide band. Each technique may enable effective absorbers in imagers. However, thin films tend to age, degrade or change during further processing, can be difficult to reproduce, and often exhibit an intrinsic granularity that creates complicated frequency dependence at THz frequencies. Thick metal films are more robust but the requirement for patterning can limit their absorption at THz frequencies and their heat capacity can be high. patterned absorber structures that offer low heat capacity, absence of aging, and uniform, predictable behavior at THz frequencies. We have correlated DC electrical and THz optical measurements of a series of implanted layers and studied their frequency dependence of optical absorption from .3 to 10 THz at cryogenic temperatures. We have modeled the optical response to determine the suitability of the implanted silicon resistor as a function of resistance in the range 10 Ohms/sq to 300 Ohms/sq.