Engineering topics
Publications and source records attributed to Stassinopoulos, E. G..
This paper reports on the development of a compact radiation monitor/dosimeter, the LIULIN-3M, and on extended measurements conducted on the ground and on commercial aircraft on domestic and international flights.
This article presents an analysis of radiation effects for several select device types and technologies aboard the Combined Release and Radiation Effects Satellite (CRRES) satellite. These space-flight measurements covered a period of about 14 months of mission lifetime. Single Event Upset (SEU) data of the investigated devices from the Microelectronics Package (MEP) were processed and analyzed. Valid upset measurements were determined by correcting for invalid readings, hard failures, missing data tapes (thus voids in data), and periods over which devices were disabled from interrogation. The basic resolution time of the measurement system was confirmed to be 2 s. Lessons learned, important findings, and recommendations are presented.
Future manned missions beyond low earth orbit require accurate predictions of the risk to astronauts and to critical systems from exposure to ionizing radiation. For low-level exposures, the hazards are dominated by rare single-event phenomena where individual cosmic-ray particles or spallation reactions result in potentially catastrophic changes in critical components. Examples might be a biological lesion leading to cancer in an astronaut or a memory upset leading to an undesired rocket firing. The risks of such events appears to depend on the amount of energy deposited within critical sensitive volumes of biological cells and microelectronic components. The critical environmental information needed to estimate the risks posed by the natural space environments, including solar flares, is the number of times more than a threshold amount of energy for an event will be deposited in the critical microvolumes. These predictions are complicated by uncertainties in the natural environments, particularly the composition of flares, and by the effects of shielding. Microdosimetric data for large numbers of orbits are needed to improve the environmental models and to test the transport codes used to predict event rates.
A detailed in-depth analysis was performed on the data from some of the CRRES MEP (Microelectronics Package) devices. These space flight measurements covered a period of about fourteen months of mission lifetime. Several types of invalid data were identified and corrections were made. Other problems were noted and adjustments applied, as necessary. Particularly important and surprising were observations of abnormal device behavior in many parts that could neither be explained nor correlated to causative events. Also, contrary to prevailing theory, proton effects appeared to be far more significant and numerous than cosmic ray effects. Another unexpected result was the realization that only nine out of thirty-two p-MOS dosimeters on the MEP indicated a valid operation. Comments, conclusions, and recommendations are given.
A single event upset (SEU), defined as a transient or glitch on the output of a device, and its applicability to integrated optoelectronics are discussed in the context of spacecraft design and the need for more than a bit error rate viewpoint for testing and analysis. A methodology for testing integrated optoelectronic receivers and transmitters for SEUs is presented, focusing on the actual test requirements and system schemes needed for integrated optoelectronic devices. Two main causes of single event effects in the space environment, including protons and galactic cosmic rays, are considered along with ground test facilities for simulating the space environment.
Since there is an increasing interest in establishing lunar bases and exploring Mars by manned missions, it is important to develop appropriate risk estimates and radiation protection guidelines. The biological effects and physics of solar and galactic cosmic radiation are examined with respect to the following: the radiation environment of interplanetary space, the biological responses to radiation in space, and the risk estimates for deep space missions. There is a need for a long-term program where ground-based studies can be augmented by flight experiments and an international standardization with respect to data collection, protocol comparison, and formulation of guidelines for future missions.
Single event phenomena in biological organisms are compared with similar phenomena in microeletronic circuits and the similarities and differences are discussed. Both types of phenomena appear to obey the same model, at least to first order. The general applicability of this first-order model appears to reflect the need to operate despite the noise inherent in the storage and processing of information within microscopic volume elements. Arrays of p-n junctions, each having dimensions of a few microns, are proposed as solid state microdosimeters.
Charge collection exhibited by p-n junctions, which have at least one small dimension, deviates from the geometric assumptions commonly used in SEU (single event upset) testing. The amount of charge collected did not increase with the secant of the angle of incidence. The number of events under the peak in the charge collection spectrum did not decrease as the cosine of the angle of incidence. Both the position of the peak and the number of events under the peak measured at a given angle of incidence depended upon which symmetry axis of the device was chosen to be the axis of rotation.
The transport, energy loss, and charge production of heavy ions in the sensitive regions of IRF 150 power MOSFETs are described. The dependence and variation of transport parameters with ion type and energy relative to the requirements for single event burnout in this part type are discussed. Test data taken with this power MOSFET are used together with analyses by means of a computer code of the ion energy loss and charge production in the device to establish criteria for burnout and parameters for space predictions. These parameters are then used in an application to predict burnout rates in a geostationary orbit for power converters operating in a dynamic mode. Comparisons of rates for different geometries in simulating SEU (single event upset) sensitive volumes are presented.
This paper addresses the issues involved in radiation testing of devices and subsystems to obtain the data that are required to predict the performance and survivability of satellite systems for extended missions in space. The problems associated with space environmental simulations, or the lack thereof, in experiments intended to produce information to describe the degradation and behavior of parts and systems are discussed. Several types of radiation effects in semiconductor components are presented, as for example: ionization dose effects, heavy ion and proton induced Single Event Upsets (SEUs), and Single Event Transient Upsets (SETUs). Examples and illustrations of data relating to these ground testing issues are provided. The primary objective of this presentation is to alert the reader to the shortcomings, pitfalls, variabilities, and uncertainties in acquiring information to logically design electronic subsystems for use in satellites or space stations with long mission lifetimes, and to point out the weaknesses and deficiencies in the methods and procedures by which that information is obtained.
The results of an investigation on the SEU sensitivity for a fiber optic operating system are reported. Measurements were made on the upset cross sections for the system in static and dynamic modes of operation. The heavy ion SEU test facility at Brookhaven and the proton facility at Harvard University were used in this study. Cross sections were obtained for Honeywell transmitter and reciever devices operating in a system at a frequency of 100 kHz. Both devices were independently irradiated. The results show that the dynamic mode was the worst case, and the receiver was the most sensitive part type in the system. The threshold linear energy transfer (LET) for the receiver was determined to be 1.6 MeV sq cm/mg for the three input signals used in the tests, which were: a continuous high state, a low state, and a 100 kHz square wave.
An analysis of the expected space radiation effects on the single event upset (SEU) properties of CMOS/bulk memories onboard the Combined Release and Radiation Effects Satellite (CRRES) is presented. Dose-imprint data from ground test irradiations of identical devices are applied to the predictions of cosmic-ray-induced space upset rates in the memories onboard the spacecraft. The calculations take into account the effect of total dose on the SEU sensitivity of the devices as the dose accumulates in orbit. Estimates of error rates, which involved an arbitrary selection of a single pair of threshold linear energy transfer (LET) and asymptotic cross-section values, were compared to the results of an integration over the cross-section curves versus LET. The integration gave lower upset rates than the use of the selected values of the SEU parameters. Since the integration approach is more accurate and eliminates the need for an arbitrary definition of threshold LET and asymptotic cross section, it is recommended for all error rate predictions where experimental sigma-versus-LET curves are available.
The occurrence of multiple upset errors during ground tests can contaminate the data and lead to error cross sections which are too high. In space, multiple errors may produce higher upsets than predicted and if they occur in single words they can defeat error detection and correction hardware. This investigation involves data which were taken during an experimental study of dose imprint effects in static memories. The results show that multiple errors occurred mainly for heavy ions with high linear energy transfers and with the majority of these in the soft upset sections of the dose-imprinted memory samples. The percentages of the total number of errors which were singles, doubles, and triplets, were determined as a function of LET, dose, and soft or hard section of the devices. The experimental observations are compared to the predictions of simple binomial statistics.
The authors report on an experimental study of dose-induced changes in SEU (single-event-upset) sensitivity of CMOS static RAMs. Two time regimes were investigated following exposure of memories to cobalt-60 gamma rays: the near term, within a few hours after exposure, and the long term, after many days. Samples were irradiated both at room and at liquid nitrogen temperatures. The latter procedure was used in order to freeze in the damage state until SEU measurements could be made prior to annealing. Results show that memories damaged by dose are more sensitive to upsets by heavy ions. The induced changes are substantial: threshold linear energy transfer (LET) values decreased by as much as 46 percent and asymptotic cross sections increased by factors of two to four (unannealed samples).
This paper investigates the efficiency of low- and high-atomic number materials used as protective shields against biologically effective radiation in doses equivalent to those expected in low-earth-orbit and interplanetary manned missions. Results are presented on calculations for single-material shields from polyethylene, water, Be, Al, Fe, and Ta and multilayer shelds made from the combinations of any two or any three of these materials, for both LEO and interplanetary conditions. It is shown that, whereas for protons and Galactic cosmic rays the ordering of shield materials has a negligible effect, for electrons and secondary bremsstrahlung, both the order and the composition are important parameters. It was found that low-atomic-number materials are most effective shields against protons and galactic cosmic rays, and are most effective in decreasing bremsstrahlung production, while high-atomic-number shields are the best attenuators of both primary electrons (if the dose is dominated by primary electrons) and secondary bremsstrahlung (if this is produced).
The near-earth radiation environment is characterized, summarizing published data on trapped and transient charged particles and their potential effects on hardware systems and the crews of manned missions. Topics examined include the role of the magnetosphere, the five radiation domains, cyclic and sporadic variations in the radiation environment, the potential effect of a high-altitude nuclear explosion, NASA empirical models for predicting trapped proton and electron fluxes, and the South Atlantic anomaly and the estimation of flux-free periods. Consideration is given to solar cosmic rays and heavy ions, Galactic cosmic rays, geomagnetic shielding, secondary radiation, the design of shielding systems, variables affecting dose evaluations, and ionizing-radiation doses. Extensive diagrams, graphs, and tables of numerical data are provided.
The earth's space radiation environment is described in terms of charged particles as relevant to effects on spacecraft electronics. The nature and magnitude of the trapped and transiting environments are described in terms of spatial distribution and temporal variation. The internal radiation environment of the spacecraft is described in terms of shielding the high-energy particles of the free-field environment. Exposure levels are presented in terms of ionizing radiation dose and particle fluence for comparison to electronic component susceptibility.
Linear energy transfer (LET) values in aluminum, silicon, and tissue targets have been calculated for 31 galactic cosmic ray ion species in eight different units. The values are described for single event upset (SEU) effect assessments or radiobiological evaluations. The data are presented in graphical and tabular form.