Engineering topics

Stapelbroek, M. G.

Publications and source records attributed to Stapelbroek, M. G..

5 records

NASA NTRS2005

A New Large-Well 1024x1024 Si:As Detector for the Mid-Infrared

We present a description of a new 1024x1024 Si:As array designed for ground-based use from 5 - 28 microns. With a maximum well depth of 5e6 electrons, this device brings large-format array technology to bear on ground-based mid-infrared programs, allowing entry to the mega-pixel realm previously only accessible to the near-IR. The multiplexer design features switchable gain, a 256x256 windowing mode for extremely bright sources, and it is two-edge buttable. The device is currently in its final design phase at DRS in Cypress, CA. We anticipate completion of the foundry run in October 2005. This new array will enable wide field, high angular resolution ground-based follow up of targets found by space-based missions such as the Spitzer Space Telescope and the Wide-field Infrared Survey Explorer (WISE).

astronomy↗

NASA NTRS1989

The solid state photomultiplier: Status of photon counting beyond the near-infrared

Rockwell International's Solid State Photomultiplier (SSPM) is an impurity-band avalanche device which can count individual photons with wavelengths between 0.4 and 28 micrometers. Its response to a photon is a pulse of between 10(exp 4) and 10(exp 5) conduction electrons, making it an important device for use in phenomenology. The characteristics of the SSPM make it a potentially important device for use in astronomical applications. Contract NAS2-12400 was initiated in June 1986 to conduct modeling and characterization studies of the SSPM to provide a basis for assessing its use in astronomical systems. Some SSPM models and results of measurements which characterize the group of SSPMs recently fabricated on this contract are discussed.

Hays, K. M.↗

NASA NTRS1989

Improved Si:As BIBIB (Back-Illuminated Blocked-Impurity-Band) hybrid arrays

Results of a program to increase the short wavelength (less than 10 microns) detective quantum efficiency, eta/beta, of Si:As Impurity Band Conduction arrays are presented. The arrays are epitaxially grown Back-Illuminated Blocked (BIB) Impurity-Band (BIBIB) 10x50 detectors bonded to switched-FET multiplexers. It is shown that the 4.7 microns detective quantum efficiency increases proportionately with the thickness of the infrared active layer. A BIB array with a thick active layer, designed for low dark current, exhibits eta/beta = 7 to 9 percent at 4.7 microns for applied bias voltages between 3 and 5 V. The product of quantum efficiency and photoelectric gain, etaG, increases from 0.3 to 2.5 as the voltage increases from 3 to 5 V. Over this voltage range, the dark current increases from 8 to 120 e(-)s(-1) at a device temperature of 4.2 K and is under 70 e(-)s(-1) for all voltages at 2 K. Because of device gain, the effective dark current (equivalent photon rate) is less than 3 e(-)s(-1) under all operating conditions. The effective read noise (equivalent photon noise) is found to be less than 12 electrons under all operating conditions and for integration times between 0.05 and 100 seconds.

Herter, T.↗

NASA NTRS1989

A non-Markovian model of avalanche gain statistics for a solid-state photomultiplier

A solid-state photomultiplier (SSPM) capable of continously detecting individual photons of wavelength between 0.4 and 28 microns has recently been disclosed (Petroff et al., 1987). The initial response of the SSPM to single photon is a fast, high-amplitude current pulse of between 10,000 and 100,000 electrons. A phenomenological model of the SSPM avalanche process is presented which successfully predicts the shape of the observed pulse-amplitude distribution by including small history-dependent effects on the carrier transport. The model clarifies the consequences of the electric field strength and the scattering of the electrons for the development of the avalanche in the SSPM.

Laviolette, Randall A.↗

NASA NTRS1986

Si:As BIB detector arrays

Highlights of the results obtained on arsenic-doped silicon blocked impurity band (BIB) detectors and arrays since the invention of the BIB concept a few years ago are presented. After a brief introduction and a description of the BIB concept, data will be given on single detector performance. Then different arrays that were fabricated will be described and test data presented.

Bharat, R.↗