Multiply-charged argon ion irradiation of microfabricated niobium wires
Not Available
Langa, Jr., Bernardo↗
Engineering topics
Srijanto, Bernadeta
Publications and source records attributed to Srijanto, Bernadeta.
Vertical GaN Superjunction Diode on Sapphire with Kilovolt Dynamic Breakdown Voltage
The development of superjunction structures for use in vertical wide bandgap power devices promise to break the 1-D material limits. Additionally, the possibility of utilizing heteroepitaxial GaN-on-Sapphire wafer for vertical devices can significantly trim the material and device cost. This work introduces a quasi-vertical GaN-on-Sapphire superjunction PN diode design utilizing sputtered p-NiO on the etched GaN fins for superjunction formation. DC breakdown voltage is shown to vary with superjunction charge imbalance and significantly exceed the expected 1-D planar limit of 350V given the epilayer design used. A maximum breakdown voltage of 840 V is extracted for near charge balance conditions limited by leakage current. Dynamic breakdown of the device is characterized as a function of reverse voltage slew rate. A maximum dynamic breakdown voltage of 1160 V under a reverse voltage slew rate of 2000 V/μs is found.
Porter, Matthew↗
Electro-optic Analog-to-Digital Converter Using Spectral Interferometry
We demonstrate an optical analog-to-digital converter (ADC) leveraging spectral interferometry of an integrated electro-optic Mach-Zehnder interferometer on thin-film lithium niobate. The ADC features a high dynamic range of 118 dB/Hz with a 3-Vpp input range.
Shao, Linbo↗