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Spicer, W. E.

Publications and source records attributed to Spicer, W. E..

At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1989

CdTe and ZnTe metal interface formation and Fermi-level pinning

Interfacial morphology and Fermi-level pinning behavior at the interfaces of Al, Ag, and Pt with UHV-cleaved CdTe and ZnTe are studied using X-ray photoelectron and ultraviolet photoemission spectroscopies. Results are compared to metal/HgCdTe interface formation. For Al/CdTe, a case is found where significantly greater intermixing occurs in CdTe than seen on HgCdTe. The Al/ZnTe interface is also more abrupt than Al/CdTe. Band bending results for interfaces of all three metals with p-CdTe and p-ZnTe are presented and implications for metal/HgZnTe interface formation are considered.

Wahi, A. K.↗
NASA NTRS1989

Research and development of HgZnTe as an infrared material

Interfacial morphology and Fermi level pinning behavior at the interfaces of Al, Ag, and Pt with UHV-cleaved CdTe and ZnTe have been studied using X-ray and ultraviolet photoemission spectroscopies. Results are compared to metal/HgCdTe interface formation, where the weak HgTe bond and consequent ease of Hg loss strongly influence semiconductor disruption and metal-semiconductor intermising. For Al/CdTe, the strong Al-Te reaction yields a significantly more extensive Al-Te reacted region than has been observed for HgCdTe. The Al/ZnTe interface is observed to be more abrupt than Al/CdTe. The final Fermi level pinning positions, Ef-Evbm for Al, Ag, and Pt on p-type CdTe and p-ZnTe have been determined. Efi is found to be roughly the same for both CdTe and ZnTe, with the value for ZnTe lying approximately 0.2 eV closer to the VBM for all three metals. From these results, one would expect Schottky barriers of about the same height for these metals on p-CdTe and p-ZnTe; and also that, in principle, metal interfaces with the two alloys HgCdTe and HgZnTe would have the same properties. Comparisons and implications for electrical behavior of metal contacts to the alloys are discussed.

Wahi, A. K.↗
NASA NTRS1987

Photoemission studies of core level shifts in HgCdTe, CdMnTe, and HgZnTe

The results of photoemission studies of core level shifts in the Hg(1-x)Cd(x)Te, Cd(1-x)Mn(x)Te, and Hg(1-x)Zn(x)Te alloys are discussed. In Hg(0.7)Cd(0.3)Te, the Hg 5d level is found to shift to lower binding energy by 0.1 eV, and the Cd 4d level to shift to higher binding energy by 0.25 eV upon alloying (relative to their binaries). The Born-Haber cycle is used to determine core level binding energies relative to the valence-band maximum in the context of tight-binding theory, and calculated core level shifts upon alloying in HgCdTe are shown to be too small to account for the observed values. A natural valence-band offset between HgTe and CdTe of 0.35 eV is found.

Shih, C. K.↗
NASA NTRS1987

Determination of a natural valence-band offset - The case of HgTe and CdTe

A method to determine a natural valence-band offset (NVBO), i.e., the change in the valence-band maximum energy which is intrinsic to the bulk band structures of semiconductors is proposed. The HgTe-CdTe system is used as an example in which it is found that the valence-band maximum of HgTe lies 0.35 + or - 0.06 eV above that of CdTe. The NVBO of 0.35 eV is in good agreement with the X-ray photoemission spectroscopy measurement of the heterojunction offset. The procedure to determine the NVBO between semiconductors, and its implication on the heterojunction band lineup and the electronic structures of semiconductor alloys, are discussed.

Shih, C. K.↗
NASA NTRS1985

The development of photoemission spectroscopy and its application to the study of semiconductor interfaces Observations on the interplay between basic and applied research (Welch Memorial Lecture)

A sketch is given of the development of photoemission electron spectroscopy (PES) with emphasis on the author's own experience. Emphasis is placed: (1) on the period between 1958-1970; (2) on the various developments which were required for PES to emerge; and (3) on the strong interactions between applied/fundamental and knowledge/empirically based research. A more detailed discussion is given of the recent (1975-present) application of PES to study the interfaces of III-V semiconductors.

Spicer, W. E.↗
NASA NTRS1977

Auger depth profiling of Au-Al/x/Ga/1-x/As interfaces and LPE Al/x/Ga/1-x/As-GaAs heterojunctions

An attempt is made to report Auger depth profiles produced in a UHF ion-milling Auger system for intentionally 'graded' Al(x)Ga(1-x)As-GaAs heterojunctions, 'abrupt' growth heterojunctions of the same material, and Au-Al(x)Ga(1-x)As interfaces. It is found that the interface widths of the 'abrupt' growth heterojunctions did not fluctuate greatly from an average value of 110 A and that 'graded' growth samples had interface widths of about 525 to 1500 A. The results for the Au-containing samples indicate that an oxide layer was present between the Au and the Al(x)Ga(1-x)As.

Garner, C. M.↗
NASA NTRS1977

Auger profiling of 'abrupt' LPE Al/x/Ga/1-x/As-GaAs heterojunctions

Auger analysis in conjunction with ion milling was used to study depth profiles of 'abrupt' Al/x/Ga/1-x/As-GaAs heterojunctions grown by liquid-phase epitaxial (LPE) techniques. Results are presented on samples with x = 0.43, 0.60, and 0.85. The interface widths obtained are listed in a table together with the growth conditions and the layer thicknesses. The values for the layer thicknesses are in the range from 125 to 950 A. It is found that for thin layers the interface widths do not differ greatly from the average value of 110A.

Garner, C. M.↗
NASA NTRS1974

Investigation of the Kramers-Kronig analysis - Revised optical constants of AgCl

White and Straley (1968) have reported room-temperature optical constants for AgCl that exhibit negative, unphysical dips at the band edge. Because Morrison (1961) also obtained such behavior for InAs, InSb, and GaAs, a study is made of the possible sources of this anomaly. An artifact of the experimental reflectance data near this energy is found to be responsible. No defect in the Kramers-Kronig transform or its use is implied, contrary to some suggestions. The corrected optical constants of AgCl were modified by about 10% up to 5 eV, whereas at higher energies they were barely affected. Thus Kramers-Kronig-deduced optical constants that exhibit unusual structure are not affected by this structure at other energies. The new AgCl results are presented, and assignments are briefly discussed.

Bauer, R. S.↗
NASA NTRS1973

A standard for ultraviolet radiation.

Photoemission diode standards for accurately measuring monochromatic ultraviolet light intensity (3000 A-1100 A) are described that are also blind to visible light. The standard uses an opaque photocathode of Cs2Te and is unique because of its combination of thinness (19 mm), high sensitivity, time stability, and uniformity of response. Design criteria, construction methods, and difficulties overcome in obtaining a stable, uniform, high yield photocathode responses are discussed. Cs2Te is discussed in terms of a model for high yield photoemitters.

Fisher, G. B.↗
NASA NTRS1973

Photoemission from CsI - Experiment.

Considerable attention in the investigation was given to the resolution maximization of details in the spectra. Very thin films were used in the measurements, which were conducted at 300 and 77 C with the aid of an improved photoemission apparatus. It was found that the principal features of the photoemission spectra from CsI cannot be explained on the basis of simple transitions from localized ionic states because such a model would predict a doublet instead of the triplet observed in the photoemission data.

Distefano, T. H.↗
NASA NTRS1973

Photocathodes for use in the large space telescope program

Photocathode materials are discussed in terms of those that are presently available and those that are becoming available. Charts are given which illustrate the response curves of the representative photocathodes. It can be seen from the curves that a relatively new class of photocathodes has been developed with responses equal to or much better than commercially available photocathodes over a very wide spectral range. In particular, the solid gallium arsenide photocathode has an increased efficiency over the standard S-1 in the infrared region of almost two orders of magnitude. A table is presented which describes the principle photocathodes and lists some of the important characteristics of each.

Spicer, W. E.↗
NASA NTRS1972

Photoemission studies of wurtzite zinc oxide.

The electronic structure of wurtzite zinc oxide, investigated over the widest possible photon energy range by means of photoemission techniques, is described. Of particular interest among the results of the photoemission study are the location of the Zn 3rd core states, the width of the upper valence bands, and structure in the conduction-band and valence-band density of states.

Powell, R. A.↗
NASA NTRS1972

The III-V photocathode - A major detector development.

Description of new (III-V) photocathodes which show improvements in sensitivity of as much as ten to a hundred times over conventional cathodes in the near infrared and useful improvements at shorter wavelengths. The development stems from a combination of basic knowledge of the photoemission process, gained in the 1950s, and the advancing understanding of the technology of III-V materials, in the 1960s. The superior performance of these cathodes is due to the fact that the vacuum level at the surface lies below the bottom of the conduction band in the bulk of the material. Consequently, the threshold of response is set by the III-V bandgap. The bandgap (and the threshold of response) can be varied by alloying different III-V materials together. A reduction in thermionic emission is realized with these cathodes. At present no semitransparent III-V cathodes with comparably interesting performance are available. The problems hindering further improvements, as well as the problems of placing these cathodes in practical multipliers and image tubes, are discussed briefly.

Spicer, W. E.↗