Engineering topics
Soibel, Alexander
Publications and source records attributed to Soibel, Alexander.
Antimonides T2SL Mid-Wave and Long-Wave Infrared Focal Plane Arrays for Earth Remote Sensing Applications
In this presentation, we will report our recent efforts in achieving high performance in Antimonides type-II superlattice (T2SL) based infrared photodetectors using the barrier infrared detector (BIRD) architecture. The initial BIRD devices (such as the nBn and the XBn) used either InAs absorber grown on InAs substrate, or lattice-matched InAsSb alloy grown on GaSb substrate, with cutoff wavelengths of ~3.2μm and ~4μm, respectively. While these detectors could operate at much higher temperatures than existing MWIR detectors based on InSb, their spectral responses do not cover the full (3 – 5.5μm) MWIR atmospheric transmission window. The T2SL BIRD devices not only covers the full MWIR atmospheric transmission window, but the full LWIR atmospheric transmission window and beyond. The LWIR detectors based on the BIRD architecture has also demonstrated significant operating temperature advantages over those based on traditional p-n junction designs. Two 6U SmalSat missions CIRAS (Cubesat Infrared Atmospheric Sounder) and HyTI (Hyperspectral Thermal Imager) are based on JPL’s T2SL BIRD focal plane arrays (FPAs). Based on III-V compound semiconductors, the BIRD FPAs offer a breakthrough solution for the realization of low cost (high yield), high-performance FPAs with excellent uniformity and pixel-to-pixel operability.
HOT T2SL Metasurfaced Digital Focal Plane Arrays for Earth Remote Sensing Applications
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T2SL meta-surfaced digital focal plane arrays for earth remote sensing applications
Long-wavelength infrared (LWIR) focal plane arrays (FPAs) needed for Earth Science imaging, spectral imaging, and sounding applications have always been among the most challenging in infrared photodetector technology due to the rigorous material growth, device design and fabrication demands. Future small satellite missions will present even more challenges for LWIR FPAs, as operating temperature must be increased so that cooler (and radiator) volume, mass, and power can be reduced.
Metasurfaced HOT T2SL Digital Focal Plane Arrays for Earth Remote Sensing Applications
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Long-wavelength infrared digital focal plane arrays for earth remote sensing applications
We will report our recent efforts in achieving high performance in Antimonides type-II strained-layer superlattice based infrared photodectors using the barrier infrared detectors.
Digital focal plane array technology for sustainable space remote sensing applications
In this paper, we report our recent efforts in achieving high performance in Antimonides type-II superlattice (T2SL) based infrared photodetectors using the barrier infrared detector (BIRD) architecture, resonator pixel light coupling mechanism, and digital read out integrated circuits (DROICs).
Unipolar Barrier Dual-Band Infrared Detectors
Dual-band barrier infrared detectors having structures configured to reduce spectral crosstalk between spectral bands and/or enhance quantum efficiency, and methods of their manufacture are provided. In particular, dual-band device structures are provided for constructing high-performance barrier infrared detectors having reduced crosstalk and/or enhance quantum efficiency using novel multi-segmented absorber regions. The novel absorber regions may comprise both p-type and n-type absorber sections. Utilizing such multi-segmented absorbers it is possible to construct any suitable barrier infrared detector having reduced crosstalk, including npBPN, nBPN, pBPN, npBN, npBP, pBN and nBP structures. The pBPN and pBN detector structures have high quantum efficiency and suppresses dark current, but has a smaller etch depth than conventional detectors and does not require a thick bottom contact layer.
Type-II SuplerLattice (T2SL) Barrier InfraRed Detector (BIRD) for earth science applications
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Extended cut-off wavelength nBn detector utilizing InAsSb/InSb digital alloy
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Single-Band and Dual-Band Infrared Detectors
Bias-switchable dual-band infrared detectors and methods of manufacturing such detectors are provided. The infrared detectors are based on a back-to-back heterojunction diode design, where the detector structure consists of, sequentially, a top contact layer, a unipolar hole barrier layer, an absorber layer, a unipolar electron barrier, a second absorber, a second unipolar hole barrier, and a bottom contact layer. In addition, by substantially reducing the width of one of the absorber layers, a single-band infrared detector can also be formed.
Evidence of Carrier Localization in InAsSb/InSb Digital Alloy nBn Detector
Recently we have demonstrated a novel method of extending the cut-off wavelength of InAsSb nBn detectors, by incorporating a series of monolayers of InSb. Here we study photoluminescence and minority carrier lifetime of this InAsSb/InSb digital alloy. While increasing temperature from 15 K to 40 K we show a 14 meV blue shift of the photoluminescence peak energy and a decrease in lifetime. This deviation from the expected Varshni empirical relation indicates strong carrier localization. We contrast to photoluminescence and lifetime results in bulk InAsSb. We discuss implications of this localization for design of digital alloy InAsSb/InSb nBn detectors.
Extended cut-off wavelength nBn detector utilizing InAsSb/InSb digital alloy
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