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Singh, N. B.

Publications and source records attributed to Singh, N. B..

At least 37 records · Page 2

Multifunctional 2D- Materials: Selenides and Halides

Material is the key component and controls the performance of the detectors, devices and sensors. The materials design, processing, growth and fabrication of bulk and nanocrystals and fabrication into devices and sensors involve multidisciplinary team of experts. This places a large burden on the cost of the novel materials development. Due to this reason there is a big thrust for the prediction of multifunctionality of materials before design and development. Up to some extent design can achieve certain properties. In multinary materials processing is also a big factor. In this presentation, examples of two classes of industrially important materials will be described.

Singh, N. B.↗

Growth Mechanism of Nanowires: Binary and Ternary Chalcogenides

Semiconductor nanowires exhibit very exciting optical and electrical properties including high transparency and a several order of magnitude better photocurrent than thin film and bulk materials. We present here the mechanism of nanowire growth from the melt-liquid-vapor medium. We describe preliminary results of binary and ternary selenide materials in light of recent theories. Experiments were performed with lead selenide and thallium arsenic selenide systems which are multifunctional material and have been used for detectors, acousto-optical, nonlinear and radiation detection applications. We observed that small units of nanocubes and elongated nanoparticles arrange and rearrange at moderate melt undercooling to form the building block of a nanowire. Since we avoided the catalyst, we observed self-nucleation and uncontrolled growth of wires from different places. Growth of lead selenide nanowires was performed by physical vapor transport method and thallium arsenic selenide nanowire by vapor-liquid-solid (VLS) method. In some cases very long wires (>mm) are formed. To achieve this goal experiments were performed to create situation where nanowires grew on the surface of solid thallium arsenic selenide itself.

Singh, N. B.↗

Design and Growth of Novel Compounds for Radiation Sensors: Multinary Chalcogenides

Increasing threats of radiological weapons have revitalized the researches for low cost large volume -ray and neutron ray sensors In the past few years we have designed and grown ternary and quaternary lead and thallium chalcogenides and lead selenoiodides for detectors to meet these challenges. These materials are congruent, can be tailored to enhance the parameters required for radiation sensors. In addition, this class of compounds can be grown by Bridgman method which promises for large volume productions. We have single crystals of several compounds from the melt including Tl3AsSe3, Tl3AsSe3-xSx, TlGaSe2, AgGaGe3Se8, AgxLi1-xAgGaGe3Se8 and PbTlI5-x Sex compounds. Experimental studies indicate that these have very low absorption coefficient, low defect density and can be fabricated in any shape and sizes. These crystals do not require post growth annealing and do not show any second phase precipitates when processed for electrode bonding and other fabrication steps. In this paper we report purification, growth and fabrication of large Tl3AsSe3 (TAS) crystals. We observed that TAS crystals grown by using further purification of as supplied high purity source materials followed by directionally solidified charge showed higher resistivity than previously reported values. TAS also showed constant value as the function of voltage. A low thermal gradient and high purity source material were used to reduce thermal stresses in large crystals. By improving the purification of the as supplied source materials very high quality thallium, selenium and arsenic was achieved for preparing stoichiometric Tl3AsSe3 compound. Low gradient (<20K/cm) and slow growth rate (1-2 cm/day) produced crystals with reduced stress. Crystals did not show any micro cracking during fabrication of crystals grown with high purity and at low thermal gradient. Since thallium is a major component and very sensitive to surface oxidation, removal of surface and bulk oxides is very important. Intentional increase in the growth rate from 1cm/day to higher speed (>5cm/day) showed very different morphologies on the surface of the crystals. Electrical resistivity was one order of magnitude higher than previously reported value and it was observed to be constant as the function of frequency.

Singh, N. B.↗

Growth Mechanism of Nanowires: Ternary Chalcogenides

In the past two decades there has been a large rise in the investment and expectations for nanotechnology use. Almost every area of research has projected improvements in sensors, or even a promise for the emergence of some novel device technologies. For these applications major focuses of research are in the areas of nanoparticles and graphene. Although there are some near term applications with nanowires in photodetectors and other low light detectors, there are few papers on the growth mechanism and fabrication of nanowire-based devices. Semiconductor nanowires exhibit very favorable and promising optical properties, including high transparency and a several order of magnitude better photocurrent than thin film and bulk materials. We present here an overview of the mechanism of nanowire growth from the melt, and some preliminary results for the thallium arsenic selenide material system. Thallium arsenic selenide (TAS) is a multifunctional material combining excellent acousto-optical, nonlinear and radiation detection properties. We observed that small units of (TAS) nanocubes arrange and rearrange at moderate melt undercooling to form the building block of a nanowire. In some cases very long wires (less than mm) are formed. Since we avoided the catalyst, we observed self-nucleation and uncontrolled growth of wires from different places.

Singh, N. B.↗

Double-Diffusive Convection During Growth of Halides and Selenides

Heavy metal halides and selenides have unique properties which make them excellent materials for chemical, biological and radiological sensors. Recently it has been shown that selenohalides are even better materials than halides or selenides for gamma-ray detection. These materials also meet the strong needs of a wide band imaging technology to cover ultra-violet (UV), midwave infrared wavelength (MWIR) to very long wavelength infrared (VLWIR) region for hyperspectral imager components such as etalon filters and acousto-optic tunable filters (AO). In fact AOTF based imagers based on these materials have some superiority than imagers based on liquid crystals, FTIR, Fabry-Perot, grating, etalon, electro-optic modulation, piezoelectric and several other concepts. For example, broadband spectral and imagers have problems of processing large amount of information during real-time observation. Acousto-Optic Tunable Filter (AOTF) imagers are being developed to fill the need of reducing processing time of data, low cost operation and key to achieving the goal of covering long-wave infrared (LWIR). At the present time spectral imaging systems are based on the use of diffraction gratings are typically used in a pushbroom or whiskbroom mode. They are mostly used in systems and acquire large amounts of hyperspectral data that is processed off-line later. In contrast, acousto-optic tunable filter spectral imagers require very little image processing, providing new strategies for object recognition and tracking. They are ideally suited for tactical situations requiring immediate real-time image processing. But the performance of these imagers depends on the quality and homogeneity of acousto-optic materials. In addition for many systems requirements are so demanding that crystals up to sizes of 10 cm length are desired. We have studied several selenides and halide crystals for laser and AO imagers for MWIR and LWIR wavelength regions. We have grown and fabricated crystals of several materials such as mercurous chloride, mercurous bromide, mercurous iodide, lead chloride lead bromide, lead iodide, thallium arsenic selenide, gallium selenide, zince sulfide zinc selenide and several crystals into devices. We have used both Bridgman and physical vapor transport (PVT) crystal growth methods. In the past have examined PVT growth numerically for conditions where the boundary of the enclosure is subjected to a nonlinear thermal profile. Since past few months we have been working on binary and ternary materials such as selenoiodides, doped zinc sulfides and mercurous chloro bromide and mercurous bromoiodides. In the doped and ternary materials thermal and solutal convection play extremely important role during the growth. Very commonly striations and banding is observed. Our experiments have indicated that even in highly purified source materials, homogeneity in 1-g environment is very difficult. Some of our previous numerical studies have indicated that gravity level less than 10-4 (-g) helps in controlling the thermosolutal convection. We will discuss the ground based growth results of HgClxBr(1-x) and ZnSe growth results for the mm thick to large cm size crystals. These results will be compared with our microgravity experiments performed with this class of materials. For both HgCl-HgBr and ZnS-ZnSe the lattice parameters of the mixtures obey Vagard's law in the studied composition range. The study demonstrates that properties are very anisotropic with crystal orientation, and performance achievement requires extremely careful fabrication to utilize highest figure of merit. In addition, some parameters such as crystal growth fabrication, processing time, resolution, field of view and efficiency will be described based on novel solid solution materials. It was predicted that very similar to the pure compounds solid solutions also have very large anisotropy, and very precise oriented and homogeneous bulk and thin film crystals is required to achieve maximum performance of laser or imagers. Some of the parameters controlling the homogeneity such as thermos-solutal convection driven forces can be controlled in microgravity environments to utilize the benefits of these unique materials.

Singh, N. B.↗

Active Control of Interface Shape During the Crystal Growth of Lead Bromide

A thermal model for predicting and designing the furnace temperature profile was developed and used for the crystal growth of lead bromide. The model gives the ampoule temperature as a function of the furnace temperature, thermal conductivity, heat transfer coefficients, and ampoule dimensions as variable parameters. Crystal interface curvature was derived from the model and it was compared with the predicted curvature for a particular furnace temperature and growth parameters. Large crystals of lead bromide were grown and it was observed that interface shape was in agreement with the shape predicted by this model.

Duval, W. M. B.↗

Flight Experiment to Study Double-Diffusive Instabilities in Silver-Dopped Lead Bromide Crystals

The main objective of the present program is to understand thermosolutal convection during crystal growth of PbBr2-AgBr alloys. This involves identification of the growth conditions for microgravity experiments delineating the microsegregation, observation of convecto-diffusive instabilities and comparison with theoretical models. The overall objectives can be summarized as follows: 1. Observe and study the double diffusive and morphological instabilities in controlled conditions and to compare with theoretically predicted convective and morphological instability curves. 2. Study the three-dimensional morphological instabilities and resulting cellular growth that occur near the onset of morphological instability in the bulk samples under purely diffusive conditions. 3. Understand the micro-and macro-segregation of silver dopant in lead bromide crystals in microgravity. 4. Provide basic data on convective behavior in alloy crystals grown by the commercially important Bridgman crystal growth process.

Singh, N. B.↗

Flight Experiment to Study Double-Diffusive Instabilities in Silver-Doped Lead Bromide Crystals

A detailed study on the effect of convection on crystal quality was carried out by growing lead bromide crystals in transparent Bridgman furnace. Direct observations were made on the solid-liquid interface and a new kind of instability was observed. This could be explained on the basis of toroidal flow in the AgBr-doped lead bromide sample. With the increasing translation velocity, the interface changed from flat to depressed, and then formed a cavity in the center of the growth tube. The crystal grown at the lowest thermal Rayleigh number showed the highest quality and crystal grown at the largest thermal Rayleigh number showed the worst quality. Numerical studies were carried out to provide a framework for interpreting the observed convective and morphological instabilities, and to determine the critical (limiting) concentration of dopant for a particular growth velocity and gravity level. Theoretical instability diagrams were compared with data obtained from the experimental studies. These studies provided basic data on convective behavior in doped lead bromide crystals grown by the commercially important Bridgman process.

Singh, N. B.↗

Physical Vapor Transport of Mercurous Chloride Crystals: Design of a Microgravity Experiment

Flow field characteristics predicted from a computational model show that the dynamical state of the flow, for practical crystal growth conditions of mercurous chloride, can range from steady to unsteady. Evidence that the flow field can be strongly dominated by convection for ground-based conditions is provided by the prediction of asymmetric velocity profiles bv the model which show reasonable agreement with laser Doppler velocimetry experiments in both magnitude and planform. Unsteady flow is shown to be correlated with a degradation of crystal quality as quantified by light scattering pattern measurements, A microgravity experiment is designed to show that an experiment performed with parameters which yield an unsteady flow becomes steady (diffusive-advective) in a microgravity environment of 10(exp -3) g(sub 0) as predicted by the model, and hence yields crystals with optimal quality.

Duval, W, M. B.↗

Local and Global Bifurcations of Flow Fields During Physical Vapor Transport: Application to a Microgravity Experiment

The local bifurcation of the flow field, during physical vapor transport for a parametric range of experimental interest, shows that its dynamical state ranges from steady to aperiodic. Comparison of computationally predicted velocity profiles with laser doppler velocimetry measurements shows reasonable agreement in both magnitude and planform. Correlation of experimentally measured crystal quality with the predicted dynamical state of the flow field shows a degradation of quality with an increase in Rayleigh number. The global bifurcation of the flow field corresponding to low crystal quality indicates the presence of a traveling wave for Ra = 1.09 x 10(exp 5). For this Rayleigh number threshold a chaotic transport state occurs. However, a microgravity environment for this case effectively stabilizes the flow to diffusive-advective and provides the setting to grow crystals with optimal quality.

Duval, W. M. B.↗

Crystal growth of organics for nonlinear optical applications

The crystal growth and characterization of organic and inorganic nonlinear optical materials were extensively studied. For example, inorganic crystals such as thallium arsenic selenide were studied in our laboratory for several years and crystals in sizes over 2.5 cm in diameter are available. Organic crystals are suitable for the ultraviolet and near infrared region, but are relatively less developed than their inorganic counterparts. Very high values of the second harmonic conversion efficiency and the electro-optic coefficient were reported for organic compounds. Single crystals of a binary organic alloy based on m.NA and CNA were grown and higher second harmonic conversion efficiency than the values reported for m.NA were observed.

Singh, N. B.↗

Growth of binary organic NLO crystals: m.NA-p.NA and m.NA-CNA system

Experiments were carried out to grow 3.Nitroaniline (m.NA) crystals doped with 4.Nitroaniline (p.NA) and 2.chloro 4.Nitroaniline (CNA). The measured undercooling for m.NA, p.NA, and CNA were 0.21 tm K, 0.23 tm K, and 0.35 tm K respectively, where tm represents the melting temperature of the pure component. Because of the crystals' large heat of fusion and large undercooling, it was not possible to grow good quality crystals with low thermal gradients. In the conventional two-zone Bridgman furnace we had to raise the temperature of the hot zone above the decomposition temperature of CNA, p.NA, and m.NA to achieve the desired thermal gradient. To avoid decomposition, we used an unconventional Bridgman furnace. Two immiscible liquids, silicone oil and ethylene glycol, were used to build a special two-zone Bridgman furnace. A temperature gradient of 18 K/cm was achieved without exceeding the decomposition temperature of the crystal. The binary crystals, m.NA-p.NA and m.NA-CNA, were grown in centimeter size in this furnace. X-ray and optical characterization showed good optical quality.

Singh, N. B.↗

High-performance acousto-optic materials - Hg2Cl2 and PbBr2

New results achieved with recently grown Hg2Cl2 and PbBr2 crystals are described. With an optimized crystal growth technique Hg2Cl2 crystals were grown that show a significantly reduced acoustic attenuation compared to prior crystals, from 13.4 to 8 dB/microsec-GHz-squared. These crystals allow the development of Hg2Cl2 Bragg cells with time-bandwidth product figures in the 5100 to 6900 range, frequency operation as high as that for TeO2, and resolution about 25 percent higher than TeO2 for similar crystal lengths. PbBr2 crystals were also grown that exhibit a large figure of merit (M2 = 550) with an attenuation coefficient of 12 dB/microsec-GHz-squared. This material may be the choice for infrared devices where large diffraction efficiencies are needed.

Gottlieb, Milton↗

On the growth of Hg2Cl(1-x)2Br(x2) single crystals

Single crystals of mixed mercurous halides Hg2X2 (where X = Cl and Br) were grown by the physical vapor transport process. Structural parameters and optical properties were determined to examine the suitability of mixed crystals for acoustooptic devices. Mixed crystals grown in the low concentration region did not show striations or banding. Crystals grown in the high concentration region showed considerable inhomogeneity in the refractive index. Since we had used identical thermal conditions, inhomogeneity was attributed to the solutal convection caused by the difference in densities of mercurous chloride and bromide vapors. A low concentration of dopant did not change the acoustic velocity of the parent components.

Singh, N. B.↗

Growth and characterization of lead bromide crystals

Lead(II) bromide was purified by a combination of directional freezing and zone-refining methods. Differential thermal analysis of the lead bromide showed that a destructive phase transformation occurs below the melting temperature. This transformation causes extensive cracking, making it very difficult to grow a large single crystal. Energy of phase transformation for pure lead bromide was determined to be 24.67 cal/g. To circumvent this limitation, crystals were doped by silver bromide which decreased the energy of phase transformation. The addition of silver helped in achieving the size, but enhanced the inhomogeneity in the crystal. The acoustic attenuation constant was almost identical for the pure and doped (below 3000 ppm) crystals.

Singh, N. B.↗

Effect of growth conditions on the quality of lead bromide crystals

Single crystals of pure and doped lead bromide were grown by the Bridgman method in different convective conditions. The convection level was varied by changing the thermal and solutal Rayleigh number. The homogeneity in refractive index, and hence the optical quality, was estimated by examining the optical distortion, birefringence interferograms, and laser scattering through the crystal. The optical quality of the crystal varied significantly with the variation of convection level during the crystal growth. The critical concentration of the solute was estimated for several values of growth velocity by numerical analysis at the thermal gradient of 20 K/cm.

Singh, N. B.↗