THz Imaging Radar: Technology Development for Multi-Pixel Multi-Color Architectures
No abstract available
imaging arrays↗
Engineering topics
Siegel, Peter
Publications and source records attributed to Siegel, Peter.
Improved Speed and Functionality of a 580-GHz Imaging Radar
With this high-resolution imaging radar system, coherent illumination in the 576-to-589-GHz range and phase-sensitive detection are implemented in an all-solid-state design based on Schottky diode sensors and sources. By employing the frequency-modulated, continuous-wave (FMCW) radar technique, centimeter-scale range resolution has been achieved while using fractional bandwidths of less than 3 percent. The high operating frequencies also permit centimeter-scale cross-range resolution at several-meter standoff distances without large apertures. Scanning of a single-pixel transceiver enables targets to be rapidly mapped in three dimensions, so that the technology can be applied to the detection of concealed objects on persons.
Dengler, Robert↗
Biasable, Balanced, Fundamental Submillimeter Monolithic Membrane Mixer
This device is a biasable, submillimeter-wave, balanced mixer fabricated using JPL s monolithic membrane process a simplified version of planar membrane technology. The primary target application is instrumentation used for analysis of atmospheric constituents, pressure, temperature, winds, and other physical and chemical properties of the atmospheres of planets and comets. Other applications include high-sensitivity gas detection and analysis. This innovation uses a balanced configuration of two diodes allowing the radio frequency (RF) signal and local oscillator (LO) inputs to be separated. This removes the need for external diplexers that are inherently narrowband, bulky, and require mechanical tuning to change frequency. Additionally, this mixer uses DC bias-ability to improve its performance and versatility. In order to solve problems relating to circuit size, the GaAs membrane process was created. As much of the circuitry as possible is fabricated on-chip, making the circuit monolithic. The remainder of the circuitry is precision-machined into a waveguide block that holds the GaAs circuit. The most critical alignments are performed using micron-scale semiconductor technology, enabling wide bandwidth and high operating frequencies. The balanced mixer gets superior performance with less than 2 mW of LO power. This can be provided by a simple two-stage multiplier chain following an amplifier at around 90 GHz. Further, the diodes are arranged so that they can be biased. Biasing pushes the diodes closer to their switching voltage, so that less LO power is required to switch the diodes on and off. In the photo, the diodes are at the right end of the circuit. The LO comes from the waveguide at the right into a reduced-height section containing the diodes. Because the diodes are in series to the LO signal, they are both turned on and off simultaneously once per LO cycle. Conversely, the RF signal is picked up from the RF waveguide by the probe at the left, and flows rightward to the diodes. Because the RF is in a quasi- TEM (suspended, microstrip-like) mode, it impinges on the diodes in an anti-parallel mode that does not couple to the waveguide mode. This isolates the LO and RF signals. This operation is similar to a cross-bar mixer used at low frequencies, except the RF signal enters through the back-short end of the waveguide rather than through the side. The RF probe also conveys the down-converted intermediate frequency (IF) signal out to an off-chip circuit board through a simple LC low-pass filter to the left as indicated. The bias is brought to the diodes through a bypass capacitor at the top.
Siegel, Peter↗
Dual-Polarization, Sideband-Separating, Balanced Receiver for 1.5 THz
A proposed heterodyne receiver would be capable of detecting electromagnetic radiation in both of two orthogonal linear polarizations, separating sidebands, and providing balanced outputs in a frequency band centered at 1.5 THz with a fractional bandwidth greater than 40 percent. Dual polarization, sideband-separating, and balanced-output receivers are well-known and have been used extensively at frequencies up to about 100 GHz; and there was an earlier proposal for such a receiver for frequencies up to 900 GHz. However, the present proposal represents the first realistic design concept for such a receiver capable of operating above 1 THz. The proposed receiver is intended to be a prototype of mass-producible receiver units, operating at frequencies up to 6 THz, that would be incorporated into highly sensitive heterodyne array instruments to be used in astronomical spectroscopic and imaging studies.
Chattopadhyay, Goutman↗
Submillimeter Confocal Imaging Active Module
The term submillimeter confocal imaging active module (SCIAM) denotes a proposed airborne coherent imaging radar system that would be suitable for use in reconnaissance, surveillance, and navigation. The development of the SCIAM would include utilization and extension of recent achievements in monolithic microwave integrated circuits capable of operating at frequencies up to and beyond a nominal radio frequency of 340 GHz. Because the SCIAM would be primarily down-looking (in contradistinction to primarily side-looking), it could be useful for imaging shorter objects located between taller ones (for example, objects on streets between buildings). The SCIAM would utilize a confocal geometry to obtain high cross-track resolution, and would be amenable to synthetic-aperture processing of its output to obtain high along-track resolution. The SCIAM (see figure) would include multiple (two in the initial version) antenna apertures, separated from each other by a cross-track baseline of suitable length (e.g., 1.6 m). These apertures would both transmit the illuminating radar pulses and receive the returns. A common reference oscillator would generate a signal at a controllable frequency of (340 GHz + (Delta)f)/N, where (Delta)f is an instantaneous swept frequency difference and N is an integer. The output of this oscillator would be fed to a frequency- multiplier-and-power-amplifier module to obtain a signal, at 340 GHz + (Delta)f, that would serve as both the carrier signal for generating the transmitted pulses and a local-oscillator (LO) signal for a receiver associated with each antenna aperture. Because duplexers in the form of circulators or transmit/receive (T/R) switches would be lossy and extremely difficult to implement, the antenna apertures would be designed according to a spatial-diplexing scheme, in which signals would be coupled in and out via separate, adjacent transmitting and receiving feed horns. This scheme would cause the transmitted and received beams to be aimed in slightly different directions, and, hence, to not overlap fully on the targets on the ground. However, a preliminary analysis has shown that the loss of overlap would be small enough that the resulting loss in signal-to-noise ratio (SNR) would be much less than the SNR loss associated with the use of a 340-GHz T/R switch.
Hong, John↗
Biasable Subharmonic Membrane Mixer for 520 to 600 GHz
The figure shows a biasable subharmonic mixer designed to operate in the frequency range from 520 to 600 GHz. This mixer is a prototype of low-power mixers needed for development of wideband, high-resolution spectrometers for measuring spectra of molecules in the atmospheres of Earth, other planets, and comets in the frequency range of 400 to 700 GHz. Three considerations dictated the main features of the design: It is highly desirable to operate the spectrometers at or slightly below room temperature. This consideration is addressed by choosing Schottky diodes as the frequency-mixing circuit elements because of all mixer diodes, Schottky diodes are the best candidates for affording sufficient sensitivity at or slightly below room-temperature range. The short wavelengths in the intended operating-frequency range translate to stringent requirements for precision of fabrication and assembly of the circuits; these requirements are even more stringent for wide-bandwidth circuits. This consideration is addressed in two ways: (1) As much as possible of the mixer circuitry is fabricated in the form of a monolithic integrated circuit on a GaAs membrane, employing a modified version of a process used previously to fabricate a non-subharmonic mixer for a frequency of 2.5 THz and frequency multipliers for frequencies up to 2 THz. (2) The remainder of the circuitry is precision machined into a waveguide block that holds the GaAs integrated circuit.
Schlecht, Erich↗
Low-Loss Waveguides for Terahertz Frequencies
Hollow-core, periodic bandgap (HCPBG) flexible waveguides have been proposed as a means of low-loss transmission of electromagnetic signals in the frequency range from about 300 GHz to 30 THz. This frequency range has been called the "terahertz gap" because it has been little utilized: Heretofore, there has been no way of low-loss guiding of terahertz beams other than by use of fixed-path optical beam guides with lenses and mirrors or multimode waveguides that cannot maintain mode purity around bends or modest discontinuities.
Siegel, Peter↗
Method and apparatus for low-loss signal transmission
The present invention relates to the field of radio-frequency (RF) waveguides. More specifically, the present invention pertains to a method and apparatus that provides ultra-low-loss RF waveguide structures targeted between approximately 300 GHz and approximately 30 THz. The RF waveguide includes a hollow core and a flexible honeycomb, periodic-bandgap structure surrounding the hollow core. The flexible honeycomb, periodic-bandgap structure is formed of a plurality of tubes formed of a dielectric material such as of low-loss quartz, polyethylene, or high-resistivity silicon. Using the RF waveguide, a user may attach a terahertz signal source to the waveguide and pass signals through the waveguide, while a terahertz signal receiver receives the signals.
Siegel, Peter↗
Microrectenna: A Terahertz Antenna and Rectifier on a Chip
A microrectenna that would operate at a frequency of 2.5 THz has been designed and partially fabricated. The circuit is intended to be a prototype of an extremely compact device that could be used to convert radio-beamed power to DC to drive microdevices (see Figure 1). The microrectenna (see Figure 2) circuit consists of an antenna, a diode rectifier and a DC output port. The antenna consists of a twin slot array in a conducting ground plane (denoted the antenna ground plane) over an enclosed quarter-wavelength-thick resonant cavity (denoted the reflecting ground plane). The circuit also contains a planar high-frequency low-parasitic Schottky-barrier diode, a low-impedance microstrip transmission line, capacitors, and contact beam leads. The entire 3-D circuit is fabricated monolithically from a single GaAs wafer. The resonant cavity renders the slot radiation pattern unidirectional with a half-power beam width of about 65. A unique metal mesh on the rear of the wafer forms the backplate for the cavity but allows the GaAs to be wet etched from the rear surface of the twin slot antennas and ground plane. The beam leads protrude past the edge of the chip and are used both to mount the microrectenna and to make the DC electrical connection with external circuitry. The antenna ground plane and the components on top of it are formed on a 2- m thick GaAs membrane that is grown in the initial wafer MBE (molecular beam epitaxy) process. The side walls of the antenna cavity are not metal coated and, hence, would cause some loss of power; however, the relatively high permittivity (epsilon=13) of the GaAs keeps the cavity modes well confined, without the usual surface-wave losses associated with thick dielectric substrates. The Schottky-barrier diode has the usual submicron dimensions associated with THz operation and is formed in a mesa process above the antenna ground plane. The diode is connected at the midpoint of a microstrip transmission line, which is formed on 1- m-thick SiO (permittivity of 5) laid down on top of the GaAs membrane. The twin slots are fed in phase by this structure. To prevent radio-frequency (RF) leakage past the slot antennas, low-loss capacitors are integrated into the microstrip transmission line at the edges of the slots. The DC current- carrying lines extend from the outer edges of the capacitors, widen approaching the edges of the chip, and continue past the edges of the chip to become the beam leads used in tacking down the devices. The structure provides a self-contained RF to DC converter that works in the THz range.
Siegel, Peter↗
600-GHz Electronically Tunable Vector Measurement System
A compact, high-dynamic-range, electronically tunable vector measurement system that operates in the frequency range from approximately 560 to approximately 635 GHz has been developed as a prototype of vector measurement systems that would be suitable for use in nearly-real-time active submillimeter-wave imaging. As used here, 'vector measurement system" signifies an instrumentation system that applies a radio-frequency (RF) excitation to an object of interest and measures the resulting amplitude and phase response, relative to either the applied excitatory signal or another reference signal related in a known way to applied excitatory signal.
Dengler, Robert↗
Scanning Terahertz Heterodyne Imaging Systems
Scanning terahertz heterodyne imaging systems are now at an early stage of development. In a basic scanning terahertz heterodyne imaging system, (see Figure 1) two far-infrared lasers generate beams denoted the local-oscillator (LO) and signal that differ in frequency by an amount, denoted the intermediate frequency (IF), chosen to suit the application. The LO beam is sent directly to a mixer as one of two inputs. The signal beam is focused to a spot on or in the specimen. After transmission through or reflection from the specimen, the beams are focused to a spot on a terahertz mixer, which extracts the IF outputs. The specimen is mounted on a translation stage, by means of which the focal spot is scanned across the specimen to build up an image.
Siegel, Peter↗
Carbon-Nanotube Schottky Diodes
Schottky diodes based on semiconducting single-walled carbon nanotubes are being developed as essential components of the next generation of submillimeter-wave sensors and sources. Initial performance predictions have shown that the performance characteristics of these devices can exceed those of the state-of-the-art solid-state Schottky diodes that have been the components of choice for room-temperature submillimeter-wave sensors for more than 50 years. For state-of-the-art Schottky diodes used as detectors at frequencies above a few hundred gigahertz, the inherent parasitic capacitances associated with their semiconductor junction areas and the resistances associated with low electron mobilities limit achievable sensitivity. The performance of such a detector falls off approximately exponentially with frequency above 500 GHz. Moreover, when used as frequency multipliers for generating signals, state-of-the-art solid-state Schottky diodes exhibit extremely low efficiencies, generally putting out only micro-watts of power at frequencies up to 1.5 THz. The shortcomings of the state-of-the-art solid-state Schottky diodes can be overcome by exploiting the unique electronic properties of semiconducting carbon nanotubes. A single-walled carbon nanotube can be metallic or semiconducting, depending on its chirality, and exhibits high electron mobility (recently reported to be approx.= 2x10(exp 5)sq cm/V-s) and low parasitic capacitance. Because of the narrowness of nanotubes, Schottky diodes based on carbon nanotubes have ultra-small junction areas (of the order of a few square nanometers) and consequent junction capacitances of the order of 10(exp -18) F, which translates to cutoff frequency >5 THz. Because the turn-on power levels of these devices are very low (of the order of nano-watts), the input power levels needed for pumping local oscillators containing these devices should be lower than those needed for local oscillators containing state-of-the-art solid-state Schottky diodes.
Manohara, Harish↗
T-Shaped Emitter Metal Structures for HBTs
Metal emitter structures in a class of developmental InP-based high-speed heterojunction bipolar transistors (HBTs) have been redesigned to have T-shaped cross sections. T-cross-section metal features have been widely used in Schottky diodes and high-electron-mobility transistors, but not in HBTs. As explained, the purpose served by the present T cross-sectional shapes is to increase fabrication yields beyond those achievable with the prior cross-sectional shapes.
Fung, King Man↗
Generation of THz signals: from chips to (space) ships
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diodes↗
Indium phosphide dobule heterojunction bipolar transistors with T-shaped emitter metal features having cutoff frequencies in excess of 200GHz
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HBT↗
Alumina or Semiconductor Ribbon Waveguides at 30 to 1,000 GHz
Ribbon waveguides made of alumina or of semiconductors (Si, InP, or GaAs) have been proposed as low-loss transmission lines for coupling electronic components and circuits that operate at frequencies from 30 to 1,000 GHz. In addition to low losses (and a concomitant ability to withstand power levels higher than would otherwise be possible), the proposed ribbon waveguides would offer the advantage of compatibility with the materials and structures now commonly incorporated into integrated circuits. Heretofore, low-loss transmission lines for this frequency range have been unknown, making it necessary to resort to designs that, variously, place circuits and components to be coupled in proximity of each other and/or provide for coupling via free space through bulky and often lossy optical elements. Even chip-to-chip interconnections have been problematic in this frequency range. Metal wave-guiding structures (e.g., microstriplines and traditional waveguides) are not suitable for this frequency range because the skin depths of electromagnetic waves in this frequency range are so small as to give rise to high losses. Conventional rod-type dielectric waveguide structures are also not suitable for this frequency range because dielectric materials, including ones that exhibit ultralow losses at lower frequencies, exhibit significant losses in this frequency range. Unlike microstripline structures or metallic waveguides, the proposed ribbon waveguides would be free of metal and would therefore not be subject to skin-depth losses. Moreover, although they would be made of materials that are moderately lossy in the frequency range of interest, the proposed ribbon waveguides would cause the propagating electromagnetic waves to configure themselves in a manner that minimizes losses.
Yeh, Cavour↗
THz semiconductor-based front-end receiver technology for space applications
Advances in the design and fabrication of very low capacitance planar Schottky diodes and millimeter-wave power amplifiers, more accurate device and circuit models for commercial 3-D electromagnetic simulators, and the availability of both MEMS and high precision metal machining, have enabled RF engineers to extend traditional waveguide-based sensor and source technologies well into the TI-Iz frequency regime. This short paper will highlight recent progress in realizing THz space-qualified receiver front-ends based on room temperature semiconductor devices.
Schottky diode multipliers↗
Reliability of Cascaded THz Frequency Chains with Planar GaAs Circuits
Planar GaAs Schottky diodes will be utilized for all of the LO chains on the HIPI instrument for the Herschel Space Observatory. A better understanding of device degradation mechanisms is desirable in order to specify environmental and operational conditions that do not reduce device life times. Failures and degradation associated with ESD (Electrostatic Discharge), high temperatures, DC currents and RF induced current and heating have been investigated. The goal is to establish a procedure to obtain the safe operating range for a given frequency multiplier.
reliability on Schottky diode multipliers↗