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Shimpi, Tushar

Publications and source records attributed to Shimpi, Tushar.

13 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Modeling of the effectiveness of novel edge seal designs for fast, low‐Cap‐Ex manufacturing

Abstract In the manufacturing of photovoltaic (PV) modules, the lamination process can take up to 20 min to complete. In this work, new lamination processes are being developed, and have been prototyped, which hope to be able to cut this time down to as little as 30 s. This could provide significant savings in the cost of lamination equipment, floor space, and energy. PV modules are expected to have a lifespan exceeding 20 to 30 years. For moisture‐sensitive PV technologies, the edge seal between the two layers of glass can be the weakest point of its reliability. There is an inherent challenge when evaluating edge seal materials due to their low permeation rates. As part of Colorado State University's Photovoltaic Research and Development 2, work at the National Renewable Energy Laboratory has developed models to evaluate edge seal configurations in glass‐glass PV modules. Here, this new manufacturing process is evaluated for long‐term moisture durability. Different edge seal design options within glass–glass PV modules are explored. Most of these designs are targeting a superstrate on glass configuration, e.g CdTe, but some designs could be used on conventional crystalline Si cells. Using COMSOL finite element simulation software, we investigated the edge seal and interlayer design configurations containing silicone perimeter edge adhesive, desiccated polyisobutylene‐based edge seal, air, and polyolefin while integrating climate conditions equivalent to a hot and humid environment such as Miami, Florida. We found optimized configurations that will allow the module to prevent moisture ingress over 50 years minimizing the amount of time and material used while utilizing polymers that are easily dispensed.

14 SOLAR ENERGY↗
DOE OSTI2023

A comprehensive material study of CdSeTe films deposited with differing selenium compositions

The addition of selenium into CdTe to create the ternary alloy CdSeTe has been one of the most impactful advancements to CdTe-based photovoltaics in the last decade. CdSeTe/CdTe bilayer device structures have enabled a gain in short-circuit current due to the narrower bandgap of the alloy, with minimal to no loss in voltage. Intensity of photoluminescence and time-resolved photoluminescence measurements suggest this is due to an increase in carrier lifetime and concomitant greater fraction of radiative vs non-radiative recombination events which allows for a reduction in the voltage deficit. Here, in this work, we study the properties of as-deposited and CdCl 2 -treated CdSeTe films deposited by close-space sublimation under varying conditions from CdSeTe source charges with both 20 and 40 mol% CdSe. We find that the selenium content in the deposited films are substantially reduced from that of the source material. Additionally, deposition temperature, particularly that of the substrate, considerably affects the grain size, crystallinity, and photoluminescence of the material, illustrating the importance of source material selection and process optimization. Finally, we present evidence that the source material, and therefore the properties of the deposited films, change over time as the source material is used.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Metastability and Degradation of CdTe Solar Cells Investigated by nm-Scale Electrical Potential Imaging

We report on investigations of reversible metastability and irreversible degradation of MZO/CdSeTe/CdTe devices from the perspective of electric field across the device using Kelvin probe force microscopy (KPFM). The device showed reversible transitions between the light-soak state (LSS) with the best device efficiency and the dark-soak state (DSS) with an inferior efficiency. However, it showed an irreversible degradation state (DgS) driven by long-hour light soaking at an elevated temperature. The nm-scale KPFM electric field imaging on cross-sections of the devices revealed different anomalous electric field profiles. The electric field at the LSS exhibits a main peak inside the CdSeTe layer but not at the MZO/CdSeTe heterointerface, demonstrating that working junction of the device is a buried homojunction (BHJ). At the DSS, a second electric field peak was observed at the MZO/CdSeTe interface with a similar strength to the main BHJ, which probably caused the decrease in fill factor at the DSS. At the DgS, the electric field peak at the MZO/CdSeTe interface increased significantly and a third electric field was measured at the back contact of the device. Device modeling using COMSOL and in alignment with both the electric field and device current-voltage curves suggest that a slightly low n-doped CdSeTe in the region near the MZO/CdSeTe interface caused the BHJ, and that either a loss of MZO doping or increase of the conduction band offset spike due to long-term stress caused the fill factor-dominated degradation and the increased electric field near the MZO/CdSeTe interface at the DgS. The former, MZO doping decrease, is more plausible by referring the related literature.

BHJ↗
DOE OSTI2021

Mitigation of J–V distortion in CdTe solar cells by Ga-doping of MgZnO emitter

Distortions in the current–voltage curves of CdTe-based thin-film solar cells with MgZnO emitter layers are not uncommon. Even when such distortions are very subtle with standard sunlight, they can be greatly accentuated by the removal of short-wavelength photons with optical filters, and the dark-curve turn-on voltage can be noticeably increased. The strong suggestion is that good J–V curves with full-spectrum light often rely on photogeneration of electrons from trap states in the MgZnO emitter. When the carrier concentration of the CdTe absorber is increased with external doping, there is a corresponding need for a larger MgZnO carrier concentration. Based on the assumption that the emitter carrier concentration needs to be comparable to that of the absorber, Ga-doping of the MgZnO was shown to very nearly eliminate the large filtered-light distortions and is arguably superior to MgZnO that relies on photogeneration. In addition, it was shown that photogeneration and recovery in MgZnO is relatively slow, so that without Ga-doping, the cell efficiency improves gradually for most of an hour in the light, and the turn-on voltage of the dark curve increases on a similar time scale when the light is removed.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Transparent MgO for Back-Contact Passivation of CdTe-Based Solar Cells

The passivating effects of MgO have been studied by integrating into an existing superstrate CdTe thin film solar cell device architecture. When implemented as an emitter to replace the typical MZO, the device performance was below par, but improved PL and TRPL was detected with significant carrier lifetimes in comparison to the MZO devices. However, when integrated at the back, the PL signal was detected upon the illumination of excitation laser from the back. This has opened the possibility of probing the back of the CdTe thin film solar cells with transparent back contact with improved back passivation and a bifacial device structure. Further, the TRPL measurements suggests that the MgO shows passivating effects to a CdTe surface irrespective of method of deposition implemented.

bifacial↗
DOE OSTI2021

CdTe‐Based Solar Cells with Variations in Mg Concentration in the MgZnO Emitter

The optimal fraction of Mg incorporation in sputter-deposited Mg X Zn 1−X O (MZO) emitters for thin-film CdTe-based solar cells is evaluated by varying it over a range of x from 0 to 0.35. This range allows a variation in the conduction band offset from −0.1 eV (cliff like) to +0.32 eV (spike like). Here, a maximum efficiency of 18.5% for cells with the bilayer CdSeTe/CdTe absorber occurs at x = 0.15, which corresponds to a spike-like band offset near 0.2 eV, as confirmed by X-ray photoelectron spectroscopy. In addition, good cell performance is seen over a fairly broad range of x extending from 0.1 to 0.25. The MZO optical bandgap increases with the Mg fraction, consistent with an increasing conduction band offset. Temperature-dependent current−voltage measurements and time-resolved photoluminescence show improvement in the emitter/absorber interface with the incorporation of Mg. Capacitance−voltage measurements show that the depletion region extends further into the absorber with more Mg, and X-ray diffraction confirms a change from a hexagonal-dominant crystal structure toward zinc blende at x = 0.35.

14 SOLAR ENERGY↗
DOE OSTI2020

Impact of Carrier Concentration and Carrier Lifetime on MgZnO/CdSeTe/CdTe Solar Cells

Here, the performance impact of multiple parameters related to the use of MgZnO (MZO) as the emitter for bilayer CdSeTe/CdTe solar cells has been investigated in detail through numerical simulations. Such a comprehensive study is particularly important, because while cell fabrication using MZO has been highly successful in some cases, it has been less so in others, and it has not been clear which combinations of parameter values are most effective. The parameters considered here include the recombination velocity at the emitter/absorber interface, bulk recombination lifetime, and the carrier concentrations of the emitter and absorber. The ranges chosen for the simulation parameters are those most likely to be found experimentally. The primary finding is that independent of the interfacial recombination velocity and bulk recombination lifetime, the MZO carrier density should be > 1017 cm-3 and in any case greater than that of the absorber to reduce interface recombination. At the same time, a shallow dopant the order of 50 meV or less should reduce SRH recombination in the bulk and enable VOC > 1V.

14 SOLAR ENERGY↗
DOE OSTI2020

Arsenic Doping of Polycrystalline CdSeTe Devices for Microsecond Life-times with High Carrier Concentrations

We report seminal advances in fabrication and understanding of group V (As) doped thin-film polycrystalline CdTe-based solar cells. The devices are fabricated using a novel approach, by sublimating layers of CdSeTe and CdSeTe:As. This new method allowed us to achieve minority carrier lifetime of over 1 μs, carrier concentration of more than 5x1015 cc-1 and external radiative efficiency of over 2% in a device configuration. We find an increase in open-circuit voltage when comparing As-doped, Cu-doped and undoped devices. The choice of CdSeTe instead of a CdTe-only absorber has been explained using first-principle density functional theory model. A SCAPS device model is used to analyze the potential causes for lower open-circuit voltage.

14 SOLAR ENERGY↗
DOE OSTI2020

Light-Induced Metastabilities in Highly Efficient MZO/CdSeTe/CdTe Thin Film Solar Cells

Metastability effects have been investigated in high efficiency MZO/CdSeTe/CdTe solar cells. Two different preconditioning procedures have been studied to recover the performance of the devices. These preconditioning procedures include light soaking, annealing and cooling down the device under different atmospheric conditions. J-V curves before any preconditioning showed a `S` shaped behavior and disappears after 15 minutes of light soaking under 1000 Wm-2. Both Atmospheric and Vacuum preconditioning showed similar recovery of the device performance. However, this recovery only lasts for 3 days when the devices were kept under vacuum in the dark.

14 SOLAR ENERGY↗
DOE OSTI2020

Influence of Process Parameters and Absorber Thickness on Efficiency of Polycrystalline CdSeTe/CdTe Thin Film Solar Cells

Graded absorbers devices with with CdSe 0.4 Te 0.6 (molar basis) and CdTe were fabricated. CdCl 2 treatment time, post-deposition CdCl 2 anneal time and thicknesses of CdSeTe and CdTe layers were varied. Photoluminescence and electrical measurements were performed on the fabricated devices. Results revealed that the individual thicknesses of CdSeTe and CdTe is critical to overall efficiency of the devices. Device fabricated on substrate with 0.5 μm CdSeTe, 3 μm CdTe with rest of process parameters kept unchanged, produced an efficiency of 20.14%. We report highest device efficiency among academia and research institutions.

Shimpi, Tushar↗