Engineering topics

Sharma, Peter Anand

Publications and source records attributed to Sharma, Peter Anand.

16 records

DOE OSTI2024

Pressure-Dependent Phase Behavior of Chemically Synthesized Ytterbium Hydride Nanoparticles and Confinement in CMK-3

In this work, we developed a chemical synthesis protocol to prepare both spherical and rod shaped YbH x nanoparticles and infiltrate a mesoporous CMK-3 structure with YbH x nanoparticles. The phase evolution of the YbH x nanoparticles was monitored as a function of the pressure in a diamond anvil cell. The cell volume of the Yb atom showed an unexpected positive deviation from the calculated equation of state (EoS) for the α-phase (space group Pnma) of YbH x . Additionally, the β-phase (space group Fm3̅m) YbH x nanoparticles appeared to become amorphous at approximately 27 GPa, although the same behavior was not observed in the Pnma (α-phase). The Pmna phase remained stable (measured up to 59.3 GPa) and showed a significantly higher than expected volume per Yb atom relative to the calculated EoS. This deviation could be attributed to the nanoscale effect on the thermodynamics of ytterbium hydride formation, which could provide a path forward to accessing higher order ytterbium hydrides (YbH x , x > 3) at pressures much lower than in the bulk metal.

diamond anvil cell↗

DOE OSTI2024

Interfacial defect reduction enhances universal power law response in Mo–SiNx granular metals

Granular metals (GMs), consisting of metal nanoparticles separated by an insulating matrix, frequently serve as a platform for fundamental electron transport studies. However, few technologically mature devices incorporating GMs have been realized, in large part because intrinsic defects (e.g., electron trapping sites and metal/insulator interfacial defects) frequently impede electron transport, particularly in GMs that do not contain noble metals. Here, we demonstrate that such defects can be minimized in molybdenum–silicon nitride (Mo–SiN x ) GMs via optimization of the sputter deposition atmosphere. For Mo–SiN x GMs deposited in a mixed Ar/N 2 environment, x-ray photoemission spectroscopy shows a 40%–60% reduction of interfacial Mo-silicide defects compared to Mo–SiN x GMs sputtered in a pure Ar environment. Electron transport measurements confirm the reduced defect density; the dc conductivity improved (decreased) by 10 4 –10 5 and the activation energy for variable-range hopping increased 10×. Since GMs are disordered materials, the GM nanostructure should, theoretically, support a universal power law (UPL) response; in practice, that response is generally overwhelmed by resistive (defective) transport. Here, the defect-minimized Mo–SiN x GMs display a superlinear UPL response, which we quantify as the ratio of the conductivity at 1 MHz to that at dc, Δσ ω ⁠. Remarkably, these GMs display a Δσ ω up to 10 7 , a three-orders-of-magnitude improved response than previously reported for GMs. By enabling high-performance electric transport with a non-noble metal GM, this work represents an important step toward both new fundamental UPL research and scalable, mature GM device applications.

36 MATERIALS SCIENCE↗

DOE OSTI2024