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Engineering topics

Selim, F. A.

Publications and source records attributed to Selim, F. A..

17 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

In situ measurements of non-equilibrium positron state defects during He irradiation in Si

Radiation-induced property changes in materials originate from the energy transfer from an incoming particle to the existing lattice, displacing atoms. The displaced atoms can cause the formation of extended defects including dislocation loops, voids, or precipitates. The non-equilibrium defects created during damage events determine the extent of these larger defects and are a function of dose rate, material, and temperature. However, these defects are transient and can only be probed indirectly. Herein, we present direct experimental measurements and evidence of irradiated non-equilibrium vacancy formation, where in situ positron annihilation spectroscopy was used to prove the generation of non-equilibrium defects in silicon.

36 MATERIALS SCIENCEā†—
DOE OSTI2022

Development of a pulsed, variable-energy positron beam for atomic scale defect studies

Positron annihilation spectroscopy provides a sensitive means of non-destructive characterization of materials, capable of probing single atom vacancies in solids with 10 ā€“7 sensitivity. Here, in this work, we detail the development of a magnetically guided, variable energy, pulsed positron beam designed to conduct depth-dependent defect studies in metals, semiconductors, and dielectrics, which will be the first of its kind in the United States. The design of the target stage provides capabilities for measurements during in situ annealing up to 800 Ā°C and incorporates a new approach to minimize the background due to energetic backscattered positrons. The developed beam at Bowling Green State University provides a powerful tool for characterization of thin films, devices, and ion irradiated materials.

47 OTHER INSTRUMENTATIONā†—
DOE OSTI2021

Light-driven permanent transition from insulator to conductor

The transition from insulator to conductor can be realized in some materials but requires modification of both the arrangement of atoms and their electronic configurations. This is often achieved by doping. Here we reveal a different mechanism the lattice may adopt to induce such a transition. Experiments showed the surprising finding that limited exposure to subband-gap light caused a permanent transition from an insulator state to a conductor state in the insulating oxide Ga 2 O 3 , with a nine orders of magnitude increase in electronic conduction. Furthermore, annealing up to 400 Ā°C did not suppress or decrease the induced conductivity. Photoexcitation by light-induced modification in the charge state of defects and subsequent lattice distortion around them was suggested to be the underlying mechanism behind this transition. Density functional theory calculations confirmed that modifying the charge state of defects leads to redistribution of the localized electrons and massive structural distortion in the surrounding lattice, causing large shifts in the density of states and introducing new states with shallower energy levels. Both experimental and theoretical results revealed the introduction of stable shallow energy levels, explaining the mechanism behind the transition from an insulator to a conductor state by light. We suggest that this mechanism may occur in other wide band-gap metal oxides leading to drastic modification in their electronic properties.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY ANDā†—
DOE OSTI2021

Neutron irradiation induced defects in oxides and their impact on the oxide properties

Understanding the irradiation-induced defects in oxides is of interest for a wide range of applications. ZnO is an interesting oxide with mixed ionic and covalent bonding that contains a variety of point defect structuresā€”making it an excellent model for studying irradiation-induced defects and their impact on properties. Here, we investigate the effects of neutron irradiation on the formation of defects and on the structural, optical, and electrical properties of ZnO single crystals. We observe the formation of vacancies and voids via positron annihilation spectroscopy. Neutron irradiation led to a significant deterioration of the ZnO structure and formed a high concentration of point defects, vacancy clusters, and voids with large disparities in their structure across variable irradiation times. It also led to significant changes in the optical properties and sample color. Irradiation for 444 h induced a high concentration of Cu acceptors as well as a high concentration of Ga donors. Additionally, temperature-dependent Hall effect measurements revealed the competing production of donors and acceptors and showed an increase in the slope of the carrier freeze-out curve with increasing irradiation dose. This work demonstrates the combined effects of neutron irradiation in producing a wide range of structural defects, impurities, and dopants in oxides and their enormous impact on modifying the oxide structure and both the optical and electronic properties. It particularly emphasizes the importance of considering the production of new impurities and dopants during the neutron irradiation of oxides.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDSā†—
DOE OSTI2021

Positron annihilation spectroscopy of defects in nuclear and irradiated materials- a review

Positron is the only probe that can detect individual atomic vacancies and small and large vacancy clusters induced by irradiation with remarkable sensitivity, providing information about their size, concentration, and chemical environment. The focus of this review article is to provide guidance to facilitate applications of positron annihilation spectroscopy (PAS) in irradiation-induced defect studies to advance the development of new radiation-tolerant materials. The principle of PAS, its techniques, and data analysis methods are described. PAS studies of defects in nuclear and irradiated materials are reviewed and discussed in depth. Future developments to advance PAS applications in nuclear materials research and studies of materials under extreme environments are presented.

Atomic scale defectsā†—
DOE OSTI2020

Point and extended defects in heteroepitaxial š›½āˆ’Gā”a 2 ā¢O 3 films

Gā”a 2 ā¢O 3 is emerging as an excellent potential semiconductor for high power and optoelectronic devices. However, the successful development of Gā”a 2ā¢ O 3 in a wide range of applications requires a full understanding of the role and nature of its point and extended defects. Here, in this work, high quality epitaxial Gā”a 2 ā¢O 3 films were grown on sapphire substrates by metal-organic chemical vapor deposition and fully characterized in terms of structural, optical, and electrical properties. Then defects in the films were investigated by a combination of depth-resolved Doppler broadening and lifetime of positron annihilation spectroscopies and thermally stimulated emission (TSE). Positron annihilation techniques can provide information about the nature and concentration of defects in the films, while TSE reveals the energy level of defects in the bandgap. Despite very good structural properties, the films exhibit short positron diffusion length, which is an indication of high defect density and long positron lifetime, a sign for the formation of Ga vacancy related defects and large vacancy clusters. These defects act as deep and shallow traps for charge carriers as revealed from TSE, which explains the reason behind the difficulty of developing conductive Gā”a 2 ā¢O 3 films on non-native substrates. Positron lifetime measurements also show nonuniform distribution of vacancy clusters throughout the film depth. Further, the work investigates the modification of defect nature and properties through thermal treatment in various environments. It demonstrates the sensitivity of Gā”a 2 ā¢O 3 microstructures to the growth and thermal treatment environments and the significant effect of modifying defect structure on the bandgap and optical and electrical properties of Gā”a 2 ā¢O 3 .

defectsā†—
DOE OSTI2020

A new mechanism for void-cascade interaction from nondestructive depth-resolved atomic-scale measurements of ion irradiationā€“induced defects in Fe

The nondestructive investigation of single vacancies and vacancy clusters in ion-irradiated samples requires a depth-resolved probe with atomic sensitivity to defects. The recent development of short-pulsed positron beams provides such a probe. Here, we combine depth-resolved Doppler broadening and positron annihilation lifetime spectroscopies to identify vacancy clusters in ion-irradiated Fe and measure their density as a function of depth. Despite large concentrations of dislocations and voids in the pristine samples, positron annihilation measurements uncovered the structure of vacancy clusters and the change in their size and density with irradiation dose. When combined with transmission electron microscopy measurements, the study demonstrates an association between the increase in the density of small vacancy clusters with irradiation and a remarkable reduction in the size of large voids. This, previously unknown, mechanism for the interaction of cascade damage with voids in ion-irradiated materials is a consequence of the high porosity of the initial microstructure.

36 MATERIALS SCIENCEā†—
DOE OSTI2020

Measurement and Simulation of Vacancy Formation in 2-MeV Self-irradiated Pure Fe

Positron annihilation spectroscopy is a powerful tool to quantify the amount of vacancies and vacancy clusters in materials. The technique has been utilized to study the induced defects in materials after ion beam and neutron irradiations. Here we make the case for how the technique can and should be utilized to quantify the defects created by irradiation in situ during irradiation to foster a more thorough understanding of the surviving defects after initial collision cascades. This paper outlines a future experimental approach and its meaning for the nuclear materials community, being able to benchmark commonly used rate theory models of damage evolution.

36 MATERIALS SCIENCEā†—
DOE OSTI2019

Study of trap levels in Ī²-Ga 2 O 3 by thermoluminescence spectroscopy

Electronic defects with shallow and deep levels in Ī²-Ga 2 O 3 single crystals were investigated by thermoluminescence (TL) spectroscopy. Undoped, Fe-doped, Sn-doped, and Mg-doped Ī²-Ga 2 O 3 single crystals grown by different methods were studied, and thermal activation energies of defects were calculated using the initial rise method. Hall-effect measurements and optical absorption spectroscopy were performed to determine the electrical transport properties and optical bandgaps. It was found that the dopants do not have any effect on the bandgap energy, which is important for comparing the trap levels in the samples. Three deep trap levels were found in the undoped crystals; the activation energy, ED, and concentration of defect centers for all of them have slightly changed after doping with Fe and Mg. Fe doping induced an additional defect center with activation energy of 0.62 eV. The measurements revealed the absence of TL emission in Sn doped crystals indicating that Sn doping may quench luminescence centers or modified some original electronic defects to inactive electron traps. The second interpretation ā€œdecrease of trapsā€ may align with the successful incorporation of Sn as a donor and the high conductivity of Sn doped crystals revealed from Hall-effect measurements. This work also illustrates that the semi-insulating characteristics of Fe and Mg doped Ga 2 O 3 are associated with the increase of the concentration of original traps in the crystal as well as the formation of new electron traps acting as deep acceptors. Recombination centers in all crystals are assumed to be associated with iron impurities.

74 ATOMIC AND MOLECULAR PHYSICSā†—
DOE OSTI2017

Optical and Electrical Properties of Sn-Doped Zinc Oxide Single Crystals

Here, Sn dopant in ZnO may significantly improve the n-type conductivity of ZnO through a characteristic double effect. However, studies on bulk Sn-doped ZnO are rare, and the effect of Sn doping on the optoelectronic properties of bulk ZnO is not well understood. In this work, the effect of Sn doping on the optical and electrical properties of ZnO bulk single crystals was investigated through optical absorption spectroscopy, Hall-effect measurements, and thermoluminescence (TL) spectroscopy. Undoped and Sn-doped ZnO single crystals were grown by chemical vapor transport method and characterized by x-ray diffraction analysis. The Sn doping level in the crystals was evaluated by inductively coupled plasma mass spectroscopy measurements. Hall-effect measurements revealed an increase in conductivity and carrier concentration with increasing Sn doping, while TL measurements identified a few donor species in the crystals with donor ionization energy ranging from 35 meV to 118 meV. Increasing Sn doping was also associated with a color change of single crystals from colorless to dark blue.

36 MATERIALS SCIENCEā†—
DOE OSTI2016

Fourier transform infrared spectroscopy measurements of multi-phonon and free-carrier absorption in ZnO

Fourier transform infrared (FTIR) measurements were carried out on thin films and bulk single crystals of ZnO over a wide temperature range to study the free-carrier and multi-phonon infrared absorptions and the effects of hydrogen incorporation on these properties. Aluminum-doped ZnO thin films were deposited on quartz substrates using atomic-layer deposition (ALD) and solā€“gel methods. Hall-effect measurements showed that the ALD films have a resistivity of Ļ = 1.11 Ɨ 10 ā€“3 Ī© cm, three orders of magnitude lower than solā€“gel films (Ļ = 1.25 Ī© cm). This result is consistent with the significant difference in their free-carrier absorption as revealed by FTIR spectra obtained at room temperature. By reducing the temperature to 80 K, the free carriers were frozen out, and their absorption spectrum was suppressed. From the FTIR measurements on ZnO single crystals that were grown by the chemical vapor transport method, we identified a shoulder around 3350 cm ā€“1 and associated it with the presence of two or more hydrogen ions in a Zn vacancy. After reducing the hydrogen level in the crystal, the measurements revealed the multi-phonon absorption of ZnO in the range of 700ā€“1200 cm ā€“1 . Furthermore, this study shows that the multi-phonon absorption bands can be completely masked by the presence of a large concentration of hydrogen in the crystals.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY ANDā†—
DOE OSTI2016

ZnO Luminescence and scintillation studied via photoexcitation, X-ray excitation and gamma-induced positron spectroscopy

The luminescence and scintillation properties of ZnO single crystals were studied by photoluminescence and X-ray-induced luminescence (XRIL) techniques. XRIL allowed a direct comparison to be made between the near-band emission (NBE) and trap emissions providing insight into the carrier recombination efficiency in the ZnO crystals. It also provided bulk luminescence measurements that were not affected by surface states. The origin of a green emission, the dominant trap emission in ZnO, was then investigated by gamma-induced positron spectroscopy (GIPS) - a unique defect spectroscopy method that enables positron lifetime measurements to be made for a sample without contributions from positron annihilation in the source materials. The measurements showed a single positron decay curve with a 175 ps lifetime component that was attributed to Zn vacancies passivated by hydrogen. Both oxygen vacancies and hydrogen-decorated Zn vacancies were suggested to contribute to the green emission. By combining scintillation measurements with XRIL, the fast scintillation in ZnO crystals was found to be strongly correlated with the ratio between the defect luminescence and NBE. This study reports the first application of GIPS to semiconductors and it reveals the great benefits of the XRIL technique for the study of emission and scintillation properties of materials.

Science & Technology - Other Topicsā†—
DOE OSTI2016

Scintillation of Un-doped ZnO Single Crystals

In this paper, scintillation properties are often studied by photo-luminescence (PL) and scintillation measurements. In this work, we combine X-ray-induced luminescence (XRIL) spectroscopy [Review of Scientific Instruments 83, 103112 (2012)] with PL and standard scintillation measurements to give insight into the scintillation properties of un-doped ZnO single crystals. XRIL revealed that ZnO luminescence proportionally increases with X-ray power and exhibits excellent linearity - indicating the possibility of developing radiation detectors with good energy resolution. Finally, by coupling ZnO crystals to fast photomultiplier tubes and monitoring the anode signal, rise times as fast as 0.9 ns were measured.

36 MATERIALS SCIENCEā†—
DOE OSTI2014

Donor characterization in ZnO by thermally stimulated luminescence

Low temperature thermo-luminescence (TL) was applied to measurements of the ionization energy of donors in ZnO. Three hydrogen-related donors were characterized with ionization energies of 36, 47 and 55 meV - values that are in complete agreement with previous reports. The donor types can be switched by relevant thermal treatments. These measurements also revealed the presence of two distinct sources for the green luminescence in ZnO. This work indicates that TL can be used to measure the donor energies in luminescent semiconductors. This approach can be particularly useful for thin-film investigations when the results of Hall-effect measurements are obscured by contributions from conductive interfaces or substrates.

Znoā†—
DOE OSTI2012

X-ray luminescence based spectrometer for investigation of scintillation properties

A new x-ray luminescence based spectrometer was developed and installed to examine the scintillation properties of materials while revealing the origins of luminescence and investigating trapping defects. Measurements were performed on a number of undoped and Ce doped yttrium aluminum garnet crystals and various luminescence centers were characterized. The measured x-ray luminescence spectra provide information about the spectral range and the scintillation efficiency and linearity. The efficiency of charge-carriers production due to x ray, their energy transfer to the luminescence centers, and the efficiency of luminescence are all reflected in the efficiency of x-ray luminescence.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ā†—
NASA NTRS1983

Double-injection, deep-impurity switch development

The overall objective of this program is the development of device design and process techniques for the fabrication of a double-injection, deep-impurity (DI)(2) silicon switch that operates in the 1-10 kV range with conduction current of 10 and 1A, respectively. Other major specifications include a holding voltage of 0 to 5 volts at 1 A anode current, 10 microsecond switching time, and power dissipation of 50 W at 75 C. This report describes work that shows how the results obtained at the University of Cincinnati under NASA Grant NSG-3022 have been applied to larger area and higher voltage devices. The investigations include theoretical, analytical, and experimental studies of device design and processing. Methods to introduce deep levels, such as Au diffusion and electron irradiation, have been carried out to "pin down' the Fermi level and control device-switching characteristics. Different anode, cathode, and gate configurations are presented. Techniques to control the surface electric field of planar structures used for (DI)(2) switches are examined. Various sections of this report describe the device design, wafer-processing techniques, and various measurements which include ac and dc characteristics, 4-point probe, and spreading resistance.

Selim, F. A.ā†—