Criticality of Low-Energy Protons in Single-Event Effects Testing of Highly-Scaled Technologies
No abstract available
Engineering topics
Publications and source records attributed to Seidleck, C. M..
No abstract available
Presentation at the annual NASA Electronic Parts and Packaging (NEPP) Program Electronic Technology Workshop (ETW). The material includes an update of progress in this NEPP task area over the past year, which includes testing, evaluation, and analysis of radiation effects data on the IBM 32 nm silicon-on-insulator (SOI) complementary metal oxide semiconductor (CMOS) process. The testing was conducted using test vehicles supplied by directly by IBM.
We report low-energy proton and alpha particle SEE data on a 32 nm silicon-on-insulator (SOI) complementary metal oxide semiconductor (CMOS) static random access memory (SRAM) that demonstrates the criticality of understanding and using low-energy protons for SEE testing of highly-scaled technologies
We investigate the use of commercial FPGA based evaluation boards for radiation testing DDR2 and DDR3 SDRAMs. We evaluate the resulting data quality and the tradeoffs involved in the use of these boards.
We have compared the data retention of irradiated commercial NAND flash memories with that of unirradiated controls. Under some circumstanc es, radiation exposure has a significant effect on the retention of f lash memories.
A 1 GeV/u Fe-56 Ion beam allows for true 90 deg. tilt irradiations of various microelectronic components and reveals relevant upset trends for an abundant element at the galactic cosmic ray (GCR) flux-energy peak.