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Segal, Julie D.

Publications and source records attributed to Segal, Julie D..

4 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Low temperature process for diode termination of fully depleted high resistivity silicon radiation detectors that can be used for shallow entrance windows and thinned sensors

Fabrication of vertical diodes for radiation sensing using a low temperature microwave anneal is provided. This kind of anneal allows the back side processing to be performed after the front side processing is done without damaging the front side structures. This enables a simplified fabrication of thinned detectors compared to a conventional silicon on insulator process. Another feature that this technology enables is a thin entrance window for a detector that also serves as the doped diode termination. Such thin entrance windows are especially suitable for detection of low energy radiation.

Kenney, Christopher J.↗
DOE OSTI2021

First Soft X-ray Quantum Efficiency Measurements on Microwave Annealed Thin-Entrance Window Sensors

Free electron lasers, such as SLAC’s LCLS-II, will provide unique scientific imaging opportunities. In order to fully utilize these facilities, we need to develop detectors with shallow entrance windows that will enable detection of soft x-rays from 250eV-1.5KeV. In addition, there are other light sources such as the FERMI, EuXFEL, and FLASH XFELs, as well as numerous synchrotrons such as the ALS, where soft x-ray science would benefit from detectors with higher quantum efficiency in the 20 eV to 1.5KeV range.A new microwave annealing technology provides an efficient way to achieve shallow entrance windows in fully depleted high-resistivity silicon sensors. Previously, SRP and SIMS measurements were used to characterize the shallow dopant profile, and sensors with the new entrance window process were deployed successfully to measure an Fe-55 x-ray spectrum. For the first time, we present quantum efficiency measurement for soft x-rays. Furthermore, the resulting estimate of the entrance window is 20nm for an arsenic implanted entrance window and 55nm for a boron implanted entrance window.

47 OTHER INSTRUMENTATION↗
DOE OSTI2018

Thin-Entrance Window Sensors for Soft X-rays at LCLS-II

Free electron lasers, such as SLAC’s LCLS-II, will provide unique scientific imaging opportunities. In order to fully utilize these facilities, we need to develop detectors with shallow entrance windows that will enable detection of soft x-rays from 250eV-1.5KeV. Here, a new microwave annealing technology provides an efficient way to achieve shallow entrance windows in fully depleted high resistivity silicon sensors.

47 OTHER INSTRUMENTATION↗