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Schoell, Ryan

Publications and source records attributed to Schoell, Ryan.

At least 19 records

Dynamic Deformation in Nuclear Graphite and Underlying Mechanisms

Time-dependent deformation in nuclear graphite is influenced by the creation and migration of radiation-induced defects in the reactor environment. This study investigates the role of pre-existing defects such as point defect clusters and Mrozowski cracks in nuclear graphite IG-110. Separate specimens were irradiated with a 2.8 MeV Au 2+ beam with a fluence of 4.38 × 10 14 cm −2 and an 8 MeV C 2+ beam with a fluence of 1.24 × 10 16 cm −2 . Microscopic specimens were either mechanically loaded inside a transmission electron microscope (TEM) or subjected to ex situ indentation-based creep loading. In situ TEM tests showed significant plasticity in regions highly localized around the Mrozowski cracks, resembling slip or ripplocation bands. Slip bands were also seen near regions without pre-existing defects but at very high stresses. Ex situ self-ion irradiation embrittled the specimens and decreased the creep displacement and rate, while heavy ion irradiation resulted in the opposite behavior. We hypothesize that the large-sized gold ions (compared to the carbon atoms) induced interplanar swelling as well as cross-plane channels for increased defect mobility. These findings illustrate the role of pre-existing defects in the dynamic relaxation of stresses during irradiation and the need for more studies into the radiation environment’s impact on the mechanical response of nuclear graphite.

creep deformation↗

The radiation instability of thermally stable nanocrystalline platinum gold

Here, recent experimentally validated alloy design theories have demonstrated nanocrystalline binary alloys that are stable against thermally induced grain growth. An open question is whether such thermal stability also translates to stability under irradiation. In this study, we investigate the response to heavy ion irradiation of a nanocrystalline platinum gold alloy that is known to be thermally stable from previous studies. Heavy ion irradiation was conducted at both room temperature and elevated temperatures on films of nanocrystalline platinum and platinum gold. Using scanning/transmission electron microscopy equipped with energy-dispersive spectroscopy and automated crystallographic orientation mapping, we observe substantial grain growth in the irradiated area compared to the controlled area beyond the range of heavy ions, as well as compositional redistribution under these conditions, and discuss mechanisms underpinning this instability. These findings highlight that grain boundary stability against one external stimulus, such as heat, does not always translate into grain boundary stability under other stimuli, such as displacement damage.

36 MATERIALS SCIENCE↗

Influence of electrical field on the susceptibility of gallium nitride transistors to proton irradiation

Radiation susceptibility of electronic devices is commonly studied as a function of radiation energetics and device physics. Often overlooked is the presence or magnitude of the electrical field, which we hypothesize to play an influential role in low energy radiation. Accordingly, we present a comprehensive study of low-energy proton irradiation on gallium nitride high electron mobility transistors (HEMTs), turning the transistor ON or OFF during irradiation. Commercially available GaN HEMTs were exposed to 300 keV proton irradiation at fluences varying from 3.76 × 10 12 to 3.76 × 10 14 cm 2 , and the electrical performance was evaluated in terms of forward saturation current, transconductance, and threshold voltage. The results demonstrate that the presence of an electrical field makes it more susceptible to proton irradiation. The decrease of 12.4% in forward saturation and 19% in transconductance at the lowest fluence in ON mode suggests that both carrier density and mobility are reduced after irradiation. Additionally, a positive shift in threshold voltage (0.32 V and 0.09 V in ON and OFF mode, respectively) indicates the generation of acceptor-like traps due to proton bombardment. high-resolution transmission electron microscopy and energy dispersive x-ray spectroscopy analysis reveal significant defects introduction and atom intermixing near AlGaN/GaN interfaces and within the GaN layer after the highest irradiation dose employed in this study. According to in-situ Raman spectroscopy, defects caused by irradiation can lead to a rise in self-heating and a considerable increase in (∼750 times) thermoelastic stress in the GaN layer during device operation. The findings indicate device engineering or electrical biasing protocol must be employed to compensate for radiation-induced defects formed during proton irradiation to improve device durability and reliability.

gallium nitride↗

An In Situ transmission electron microscopy study on the synergistic effects of Au-ion irradiation and high temperature on nuclear graphite microstructure

Abstract The combined effects of high-temperature and heavy-ion irradiation on Mrozowski cracks (MC) and nuclear graphite crystallographic dimensions have been studied using in situ heating and in situ ion-irradiation in the transmission electron microscope (TEM). Electron transparent lamella of nuclear graphite, IG-110, was irradiated using a 2.8 MeV Au beam at an ion flux of 3.991 ×10 10 ion cm −2 s −1 for 70 min at 800 °C. Upon high-temperature irradiation, Mrozowski crack closure was studied quantitatively. The analysis showed linear, positive expansion of nuclear graphite which is significantly different from the dimensional changes previously reported for low-dose neutron irradiation of nuclear graphite in which the material undergoes negative to positive expansion via a turnaround radiation dose. The trend of the thermal expansion coefficient (CTE) of pristine IG-110 in this study is consistent with previous reports in the 100 °C–800 °C temperature region in which the dimensional change ranges from negative to positive values.

36 MATERIALS SCIENCE↗

Real-Time Observation of Nanoscale Kink Band Mediated Plasticity in Ion-Irradiated Graphite: An In Situ TEM Study

Graphite IG-110 is a synthetic polycrystalline material used as a neutron moderator in reactors. Graphite is inherently brittle and is known to exhibit a further increase in brittleness due to radiation damage at room temperature. To understand the irradiation effects on pre-existing defects and their overall influence on external load, micropillar compression tests were performed using in situ nanoindentation in the Transmission Electron Microscopy (TEM) for both pristine and ion-irradiated samples. While pristine specimens showed brittle and subsequent catastrophic failure, the 2.8 MeV Au2+ ion (fluence of 4.378 × 1014 cm−2) irradiated specimens sustained extensive plasticity at room temperature without failure. In situ TEM characterization showed nucleation of nanoscale kink band structures at numerous sites, where the localized plasticity appeared to close the defects and cracks while allowing large average strain. We propose that compressive mechanical stress due to dimensional change during ion irradiation transforms buckled basal layers in graphite into kink bands. The externally applied load during the micropillar tests proliferates the nucleation and motion of kink bands to accommodate the large plastic strain. The inherent non-uniformity of graphite microstructure promotes such strain localization, making kink bands the predominant mechanism behind unprecedented toughness in an otherwise brittle material.

36 MATERIALS SCIENCE↗

Mitigating Heavy Ion Irradiation‐Induced Degradation in p‐type SnO Thin‐Film Transistors at Room Temperature

The study investigates the mitigation of radiation damage on p‐type SnO thin‐film transistors (TFTs) with a fast, room‐temperature annealing process. Atomic layer deposition is utilized to fabricate bottom‐gate TFTs of high‐quality p‐type SnO layers. After 2.8 MeV Au 4+ irradiation at a fluence level of 5.2 × 10 12 ions cm −2 , the output drain current and on/off current ratio ( I on / I off ) decrease by more than one order of magnitude, field‐effect mobility ( μ FE ) reduces more than four times, and subthreshold swing (SS) increases more than four times along with a negative shift in threshold voltage. The observed degradation is attributed to increased surface roughness and defect density, as confirmed by scanning electron microscopy (SEM), high‐resolution micro‐Raman, and transmission electron microscopy (TEM) with geometric phase analysis (GPA). A technique is demonstrated to recover the device performance at room temperature and in less than a minute, using the electron wind force (EWF) obtained from low‐duty‐cycle high‐density pulsed current. At a pulsed current density of 4.0 × 10 5 A cm −2 , approximately four times increase in I on / I off is observed, 41% increase in μ FE , and 20% decrease in the SS of the irradiated TFTs, suggesting effectiveness of the new annealing technique.

Al-Mamun, Nahid Sultan↗

The Physical and Engineering Limits of Coupled In situ TEM Experiments

Almost all future energy systems (advanced nuclear reactors, fusion energy system, concentrating solar-thermal power (CSP), and wind technologies) are limited by degradation of key material systems exposed to multiple environmental stressors. The degradation during exposure to high temperatures, radiation, mechanical loading, and chemical attack is often dictated by mechanisms active at the microstructural level. The nature of these mechanisms and the associated variations between sequential and concurrent interplay can be explored if the transmission electron microscope (TEM) is utilized as a toolbox for exploration [1]. One such tool developed at Sandia National Laboratories to couple several of these environments is the In situ Ion Irradiation TEM (I3TEM) [2]. Several studies over the last decade utilizing this tool have shown that the scientific intuition developed over decades of sequential experiments is not always a good indicator of concurrent mechanisms or failure routes. This presentation will highlight the recent and planned additions into the I3TEM facility of a Waviks gas injection system and Raman system, respectively, as can be seen in Fig. 1, permitting environmental degradation from gas species leaked into the pole piece region during quantitative mechanical loading (indentation, monotonic loading, high temperature creep, irradiation induced creep, and high-cycle fatigue); multi-beam ion irradiation (energies ranging from 1 keV to 48 MeV and species from H to Au); laser exposure (20 W and 1064 nm), or various combinations thereof that are already possible [3]. This addition permits the facility to explore both sequential or concurrently the four axes of stressors: thermal, mechanical, radiation, and chemical. This information can be directly coupled to modeling, expediting the refinement and validation of both atomistic and mesoscale models.

degradation↗

Heavy ion irradiation induced failure of gallium nitride high electron mobility transistors: effects of in-situ biasing

Abstract While radiation is known to degrade AlGaN/GaN high-electron-mobility transistors (HEMTs), the question remains on the extent of damage governed by the presence of an electrical field in the device. In this study, we induced displacement damage in HEMTs in both ON and OFF states by irradiating with 2.8 MeV Au 4+ ion to fluence levels ranging from 1.72 × 10 10 to 3.745 × 10 13 ions cm −2 , or 0.001–2 displacement per atom (dpa). Electrical measurement is done in situ , and high-resolution transmission electron microscopy (HRTEM), energy dispersive x-ray (EDX), geometrical phase analysis (GPA), and micro-Raman are performed on the highest fluence of Au 4+ irradiated devices. The selected heavy ion irradiation causes cascade damage in the passivation, AlGaN, and GaN layers and at all associated interfaces. After just 0.1 dpa, the current density in the ON-mode device deteriorates by two orders of magnitude, whereas the OFF-mode device totally ceases to operate. Moreover, six orders of magnitude increase in leakage current and loss of gate control over the 2-dimensional electron gas channel are observed. GPA and Raman analysis reveal strain relaxation after a 2 dpa damage level in devices. Significant defects and intermixing of atoms near AlGaN/GaN interfaces and GaN layer are found from HRTEM and EDX analyses, which can substantially alter device characteristics and result in complete failure.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Tailoring the Angular Mismatch in MoS 2 Homobilayers through Deformation Fields

Ultrathin MoS 2 has shown remarkable characteristics at the atomic scale with an immutable disorder to weak external stimuli. Ion beam modification unlocks the potential to selectively tune the size, concentration, and morphology of defects produced at the site of impact in 2D materials. Combining experiments, first-principles calculations, atomistic simulations, and transfer learning, it is shown that irradiation-induced defects can induce a rotation-dependent moiré pattern in vertically stacked homobilayers of MoS 2 by deforming the atomically thin material and exciting surface acoustic waves (SAWs). Furthermore, the direct correlation between stress and lattice disorder by probing the intrinsic defects and atomic environments are demonstrated. The method introduced in this paper sheds light on how engineering defects in the lattice can be used to tailor the angular mismatch in van der Waals (vdW) solids.

2D materials↗

Hot Isostatic Pressing Control of Tungsten-Based Composites

Metal-oxide composites are commonly used in high temperature environments for their thermal stability and high melting points. Commonly employed with refractory oxides or carbides such as ZrC and HfC, these materials may be improved with the use of a low density, high melting point ceramic such as CeO2. In this work, the consolidation of W-CeO2 metal matrix composites in the high CeO2 concentration regime is explored. The CeO2 concentrations of 50, 33, and 25 wt.%, the CeO2 particle size from nanometer to micrometer, and various hot isostatic pressing temperatures are investigated. Decreasing the CeO2 concentration is observed to increase the composite density and increase the Vickers hardness. The CeO2 oxidation state is observed to be a combination of Ce3+ and Ce4+, which is hypothesized to contribute to the porosity of the composites. The hardness of the metal-oxide composite can be improved more than 2.5 times compared to pure W processed by the same route. This work offers processing guidelines for further consolation of oxide-doped W composites.

36 MATERIALS SCIENCE↗

Corrosion behavior of a series of combinatorial physical vapor deposition coatings on SiC in a simulated boiling water reactor environment

Here, the simulated boiling water condition corrosion properties of multilayer and combinatorial physical vapor deposition metal coatings (Zr, Cr, and/or Ti) deposited on a SiC f -SiC composite were investigated. Various compositions within the ternary system were corroded to the most suitable composition preventing underlying SiC f -SiC from further attack. Mass measurements and visual observations were conducted to identify which coatings formed protective oxides and which coatings spalled. Transmission electron microscopy was conducted to observe the microstructure of the physical vapor deposition metal layer before and after corrosion as well as identify the oxide which were forming.

36 MATERIALS SCIENCE↗

Synthesis of Nano-Oxide Precipitates by Implantation of Ti, Y and O Ions in Fe-10%Cr: Towards an Understanding of Precipitation in Oxide Dispersion-Strengthened (ODS) Steels

The properties of oxide dispersion-strengthened steels are highly dependent on the nature and size distribution of their constituting nano-oxide precipitates. A fine control of the processes of synthesis would enable the optimization of pertinent properties for use in various energy systems. This control, however, requires knowledge of the precise mechanisms of nucleation and growth of the nanoprecipitates, which are still a matter of debate. In the present study, nano-oxide precipitates were produced via the implantation of Y, Ti, and O ions in two different sequential orders in an Fe-10%Cr matrix that was subsequently thermally annealed. The results show that the oxides that precipitate are not necessarily favoured thermodynamically, but rather result from complex kinetics aspects related to the interaction between the implanted elements and induced defects. When Y is implanted first, the formation of nanoprecipitates with characteristics similar to those in conventionally produced ODS steels, especially with a core/shell structure, is evidenced. In contrast, when implantation starts with Ti, the precipitation of yttria during subsequent high-temperature annealing is totally suppressed, and corundum Cr 2 O 3 precipitates instead. Moreover, the systematic involvement of {110} matrix planes in orientation relationships with the precipitates, independently of the precipitate nature, suggests matrix restriction effects on the early stages of precipitation.

36 MATERIALS SCIENCE↗

Mechanism of chlorine-induced stress corrosion cracking of two 304 SS heats in simulated marine environment through in situ X-ray tomography and diffraction: Role of deformation induced martensite and crack branching

In this work, In-situ synchrotron x-ray tomography and diffraction experiments were conducted on two heats of 304SS undergoing chlorine-induced stress-corrosion-cracking (CISCC) in a simulated marine environment. The role of deformation induced martensite on CISCC was investigated through diffraction analysis where no significant amount of martensite was found to form during CISCC, indicating that it may not play a significant role in affecting the process. Tomography combined with stress-intensity analysis revealed the influence of stress-intensity on branching types with single crack growth, micro-branching, and macro-branching. Post experimental electron microscopy characterization revealed the presence of FeCl 2 , CrCl 2 , and NiCl 2 ·6H 2 O compounds at the crack, which infers a dissolution mechanism during the experiment. A dissolution mechanism highlighting the synergy between stress and corrosion was proposed to explain chlorine-induced stress-corrosion-cracking and crack branching.

36 MATERIALS SCIENCE↗

Investigation of the fatigue crack behavior of 304 stainless steels using synchrotron X-ray tomography and diffraction: Influence of the martensite fraction and role of inclusions

Here, the effect of fatigue on the microstructure of four-point bend specimens of three variations of 304 stainless steels (Commercial 304, 304H, and 304 L) was investigated using synchrotron x-ray tomography and diffraction. X-ray tomography revealed the formation of the fatigue-induced microvoids and crack while the diffraction data was used to quantify the amount of deformation-induced martensite found after fatigue in all samples. Transmission electron microscopy evidenced the role of the precipitates/inclusions on the microvoid formation. It was found to depend on their chemical nature. The shape of the precipitates/inclusions was also found to have an effect on the microvoid shape.

304 stainless steel↗