Simulation of Ice Cloud Particle Size, Humidity and Temperature Measurements from the TWICE CubeSat
UNKNOWN
Evans, K. Franklin↗
Engineering topics
Schlecht, Erich T.
Publications and source records attributed to Schlecht, Erich T..
On-Chip Power-Combining for High-Power Schottky Diode Based Frequency Multipliers
A novel MMIC on-chip power-combined frequency multiplier device and a method of fabricating the same, comprising two or more multiplying structures integrated on a single chip, wherein each of the integrated multiplying structures are electrically identical and each of the multiplying structures include one input antenna (E-probe) for receiving an input signal in the millimeter-wave, submillimeter-wave or terahertz frequency range inputted on the chip, a stripline based input matching network electrically connecting the input antennas to two or more Schottky diodes in a balanced configuration, two or more Schottky diodes that are used as nonlinear semiconductor devices to generate harmonics out of the input signal and produce the multiplied output signal, stripline based output matching networks for transmitting the output signal from the Schottky diodes to an output antenna, and an output antenna (E-probe) for transmitting the output signal off the chip into the output waveguide transmission line.
Siles Perez, Jose Vicente↗
670 GHz Schottky Diode Based Subharmonic Mixer with CPW Circuits and 70 GHz IF
A coplanar waveguide (CPW) based subharmonic mixer working at 670 GHz using GaAs Schottky diodes. One example of the mixer has a LO input, an RF input and an IF output. Another possible mixer has a LO input, and IF input and an RF output. Each input or output is connected to a coplanar waveguide with a matching network. A pair of antiparallel diodes provides a signal at twice the LO frequency, which is then mixed with a second signal to provide signals having sum and difference frequencies. The output signal of interest is received after passing through a bandpass filter tuned to the frequency range of interest.
Chattopadhyay, Goutam↗
An All-Solid-State, Room-Temperature, Heterodyne Receiver for Atmospheric Spectroscopy at 1.2 THz
Heterodyne receivers at submillimeter wavelengths have played a major role in astrophysics as well as Earth and planetary remote sensing. All-solid-state heterodyne receivers using both MMIC (monolithic microwave integrated circuit) Schottky-diode-based LO (local oscillator) sources and mixers are uniquely suited for long-term planetary missions or Earth climate monitoring missions as they can operate for decades without the need for any active cryogenic cooling. However, the main concern in using Schottky-diode-based mixers at frequencies beyond 1 THz has been the lack of enough LO power to drive the devices because 1 to 3 mW are required to properly pump Schottky diode mixers. Recent progress in HEMT- (high-electron-mobility- transistor) based power amplifier technology, with output power levels in excess of 1 W recently demonstrated at W-band, as well as advances in MMIC Schottky diode circuit technology, have led to measured output powers up to 1.4 mW at 0.9 THz. Here the first room-temperature tunable, all-planar, Schottky-diode-based receiver is reported that is operating at 1.2 THz over a wide (≈20%) bandwidth. The receiver front-end (see figure) consists of a Schottky-diode-based 540 to 640 GHz multiplied LO chain (featuring a cascade of W-band power amplifiers providing around 120 to 180 mW at W-band), a 200-GHz MMIC frequency doubler, and a 600-GHz MMIC frequency tripler, plus a biasable 1.2-THz MMIC sub-harmonic Schottky-diode mixer. The LO chain has been designed, fabricated, and tested at JPL and provides around 1 to 1.5 mW at 540 o 640 GHz. The sub-harmonic mixer consists of two Schottky diodes on a thin GaAs membrane in an anti-parallel configuration. An integrated metal insulator metal (MIM) capacitor has been included on-chip to allow dc bias for the Schottky diodes. A bias voltage of around 0.5 V/diode is necessary to reduce the LO power required down to the 1 to 1.5 mW available from the LO chain. The epilayer thickness and doping profiles have been specifically optimized to maximize the mixer performance beyond 1 THz. The measured DSB noise temperatures and conversion losses of the receiver are 2,000 to 3,500 K and 12 to 14 dB, respectively, at 120 K, and 4,000 to 6,000 K and 13 to 15 dB, respectively, at 300 K. These results establish the state-of-the-art for all-solid-state, all-planar heterodyne receivers at 1.2 THz operating at either room temperature or using passive cooling only. Since no cryogenic cooling is needed, the receiver is eminently suited to atmospheric heterodyne spectroscopy of the outer planets and their moons.
Siles, Jose V.↗
Submillimeter Planetary Atmospheric Chemistry Exploration Sounder
Planetary Atmospheric Chemistry Exploration Sounder (SPACES), a high-sensitivity laboratory breadboard for a spectrometer targeted at orbital planetary atmospheric analysis. The frequency range is 520 to 590 GHz, with a target noise temperature sensitivity of 2,500 K for detecting water, sulfur compounds, carbon compounds, and other atmospheric constituents. SPACES is a prototype for a powerful tool for the exploration of the chemistry and dynamics of any planetary atmosphere. It is fundamentally a single-pixel receiver for spectral signals emitted by the relevant constituents, intended to be fed by a fixed or movable telescope/antenna. Its front-end sensor translates the received signal down to the 100-MHz range where it can be digitized and the data transferred to a spectrum analyzer for processing, spectrum generation, and accumulation. The individual microwave and submillimeter wave components (mixers, LO high-powered amplifiers, and multipliers) of SPACES were developed in cooperation with other programs, although with this type of instrument in mind. Compared to previous planetary and Earth science instruments, its broad bandwidth (approx. =.13%) and rapid tunability (approx. =.10 ms) are new developments only made possible recently by the advancement in submillimeter circuit design and processing at JPL.
Schlecht, Erich T.↗
On-Chip Power-Combining for High-Power Schottky Diode-Based Frequency Multipliers
A 1.6-THz power-combined Schottky frequency tripler was designed to handle approximately 30 mW input power. The design of Schottky-based triplers at this frequency range is mainly constrained by the shrinkage of the waveguide dimensions with frequency and the minimum diode mesa sizes, which limits the maximum number of diodes that can be placed on the chip to no more than two. Hence, multiple-chip power-combined schemes become necessary to increase the power-handling capabilities of high-frequency multipliers. The design presented here overcomes difficulties by performing the power-combining directly on-chip. Four E-probes are located at a single input waveguide in order to equally pump four multiplying structures (featuring two diodes each). The produced output power is then recombined at the output using the same concept.
Chattopadhyay, Goutam↗
670-GHz Schottky Diode-Based Subharmonic Mixer with CPW Circuits and 70-GHz IF
GaAs-based, sub-harmonically pumped Schottky diode mixers offer a number of advantages for array implementation in a heterodyne receiver system. Since the radio frequency (RF) and local oscillator (LO) signals are far apart, system design becomes much simpler. A proprietary planar GaAs Schottky diode process was developed that results in very low parasitic anodes that have cutoff frequencies in the tens of terahertz. This technology enables robust implementation of monolithic mixer and frequency multiplier circuits well into the terahertz frequency range. Using optical and e-beam lithography, and conventional epitaxial layer design with innovative usage of GaAs membranes and metal beam leads, high-performance terahertz circuits can be designed with high fidelity. All of these mixers use metal waveguide structures for housing. Metal machined structures for RF and LO coupling hamper these mixers to be integrated in multi-pixel heterodyne array receivers for spectroscopic and imaging applications. Moreover, the recent developments of terahertz transistors on InP substrate provide an opportunity, for the first time, to have integrated amplifiers followed by Schottky diode mixers in a heterodyne receiver at these frequencies. Since the amplifiers are developed on a planar architecture to facilitate multi-pixel array implementation, it is quite important to find alternative architecture to waveguide-based mixers.
Chattopadhyay, Goutam↗
Compact Receiver Front Ends for Submillimeter-Wave Applications
The current generation of submillimeter-wave instruments is relatively mass and power-hungry. The receiver front ends (RFEs) of a submillimeter instrument form the heart of the instrument, and any mass reduction achieved in this subsystem is propagated through the instrument. In the current implementation, the RFE consists of different blocks for the mixer and LO circuits. The motivation for this work is to reduce the mass of the RFE by integrating the mixer and LO circuits in one waveguide block. The mixer and its associated LO chips will all be packaged in a single waveguide package. This will reduce the mass of the RFE and also provide a number of other advantages. By bringing the mixer and LO circuits close together, losses in the waveguide will be reduced. Moreover, the compact nature of the block will allow for better thermal control of the block, which is important in order to reduce gain fluctuations. A single waveguide block with a 600- GHz RFE functionality (based on a subharmonically pumped Schottky diode pair) has been demonstrated. The block is about 3x3x3 cubic centimeters. The block combines the mixer and multiplier chip in a single package. 3D electromagnetic simulations were carried out to design the waveguide circuit around the mixer and multiplier chip. The circuit is optimized to provide maximum output power and maximum bandwidth. An integrated submillimeter front end featuring a 520-600-GHz sub-harmonic mixer and a 260-300-GHz frequency tripler in a single cavity was tested. Both devices used GaAs MMIC membrane planar Schottky diode technology. The sub-harmonic mixer/tripler circuit has been tested using conventional metal-machined blocks. Measurement results on the metal block give best DSB (double sideband) mixer noise temperature of 2,360 K and conversion losses of 7.7 dB at 520 GHz. The LO input power required to pump the integrated tripler/sub-harmonic mixer is between 30 and 50 mW.
Mehdi, Imran↗
All-Solid-State 2.45-to-2.78-THz Source
Sources in the THz range are required in order for NASA to implement heterodyne instruments in this frequency range. The source that has been demonstrated here will be used for an instrument on the SOFIA platform as well as for upcoming astrophysics missions. There are currently no electronic sources in the 2 3- THz frequency range. An electronically tunable compact source in this frequency range is needed for lab spectroscopy as well as for compact space-deployable heterodyne receivers. This solution for obtaining useful power levels in the 2 3- THz range is based on utilizing power-combined multiplier stages. Utilizing power combining, the input power can be distributed between different multiplier chips and then recombined after the frequency multiplication. A continuous wave (CW) coherent source covering 2.48 2.75 THz, with greater than 10 percent instantaneous and tuning bandwidth, and having l 14 W of output power at room temperature, has been demonstrated. This source is based on a 91.8 101.8-GHz synthesizer followed by a power amplifier and three cascaded frequency triplers. It demonstrates that purely electronic solid-state sources can generate a useful amount of power in a region of the electromagnetic spectrum where lasers (solid-state or gas) were previously the only available coherent sources. The bandwidth, agility, and operability of this THz source has enabled wideband, high-resolution spectroscopic measurements of water, methanol, and carbon monoxide with a resolution and signal-to-noise ratio unmatched by other existing systems, providing new insight in the physics of these molecules. Further - more, the power and optical beam quality are high enough to observe the Lamb-dip effect in water. The source frequency has an absolute accuracy better than 1 part in 1012, and the spectrometer achieves sub-Doppler frequency resolution better than 1 part in 108. The harmonic purity is better than 25 dB. This source can serve as a local oscillator for a variety of heterodyne systems, and can be used as a method for precision control of more powerful but much less frequency-agile quantum mechanical terahertz sources.
Mehdi, Imran↗
Diamond Heat-Spreader for Submillimeter-Wave Frequency Multipliers
The planar GaAs Shottky diode frequency multiplier is a critical technology for the local oscillator (LO) for submillimeter- wave heterodyne receivers due to low mass, tenability, long lifetime, and room-temperature operation. The use of a W-band (75-100 GHz) power amplifier followed by a frequency multiplier is the most common for submillimeter-wave sources. Its greatest challenge is to provide enough input power to the LO for instruments onboard future planetary missions. Recently, JPL produced 800 mW at 92.5 GHz by combining four MMICs in parallel in a balanced configuration. As more power at W-band is available to the multipliers, their power-handling capability be comes more important. High operating temperatures can lead to degradation of conversion efficiency or catastrophic failure. The goal of this innovation is to reduce the thermal resistance by attaching diamond film as a heat-spreader on the backside of multipliers to improve their power-handling capability. Polycrystalline diamond is deposited by hot-filament chemical vapor deposition (CVD). This diamond film acts as a heat-spreader to both the existing 250- and 300-GHz triplers, and has a high thermal conductivity (1,000-1,200 W/mK). It is approximately 2.5 times greater than copper (401 W/mK) and 20 times greater than GaAs (46 W/mK). It is an electrical insulator (resistivity approx. equals 10(exp 15) Ohms-cm), and has a low relative dielectric constant of 5.7. Diamond heat-spreaders reduce by at least 200 C at 250 mW of input power, compared to the tripler without diamond, according to thermal simulation. This superior thermal management provides a 100-percent increase in power-handling capability. For example, with this innovation, 40-mW output power has been achieved from a 250-GHz tripler at 350-mW input power, while the previous triplers, without diamond, suffered catastrophic failures. This breakthrough provides a stepping-stone for frequency multipliers-based LO up to 3 THz. The future work for this design is to apply the high output power from both the 250 and 300 GHz to multiple chains in order to generate milliwatts at 2.3 THz. Using the first generation of results for this innovation, 40 mW of output power were produced from a 240-GHz tripler at 350-mW input power, and 27- mW output power was produced from a 300-GHz tripler at 408-mW input power. This is two times higher than the current state-of-the-art output power capability. A finite-element thermal simulation also shows that 30-microns thick diamond dropped the temperature of the anodes by at least 200 C.
Lin, Robert H.↗
High-resolution three-dimensional imaging radar
A three-dimensional imaging radar operating at high frequency e.g., 670 GHz, is disclosed. The active target illumination inherent in radar solves the problem of low signal power and narrow-band detection by using submillimeter heterodyne mixer receivers. A submillimeter imaging radar may use low phase-noise synthesizers and a fast chirper to generate a frequency-modulated continuous-wave (FMCW) waveform. Three-dimensional images are generated through range information derived for each pixel scanned over a target. A peak finding algorithm may be used in processing for each pixel to differentiate material layers of the target. Improved focusing is achieved through a compensation signal sampled from a point source calibration target and applied to received signals from active targets prior to FFT-based range compression to extract and display high-resolution target images. Such an imaging radar has particular application in detecting concealed weapons or contraband.
Cooper, Ken B.↗
Radiometer on a Chip
The radiometer on a chip (ROC) integrates whole wafers together to p rovide a robust, extremely powerful way of making submillimeter rece ivers that provide vertically integrated functionality. By integratin g at the wafer level, customizing the interconnects, and planarizing the transmission media, it is possible to create a lightweight asse mbly performing the function of several pieces in a more conventiona l radiometer.
Chattopadhyay, Goutam↗
Terahertz Schottky Multiplier Sources
This viewgraph presentation reviews the multiplier source technologies and the status/Performance of THz multiplier sources. An example of a THz application is imaging radar. The presentation reviews areas of requirements for THz sources: (1) Figures of merit, (i.e., Frequency Terahertz for high resolution Bandwidth of at least 15 GHz for high range resolution Efficiency (i.e., minimize power supply requirements) (2) Output power: (i.e., Milliwatts below 800 GHz, 10s of microwatts above 1 THz, 1-2 microwatts near 2 THz (3) Mechanical--stability, compact, low mass (4) Environmental -- radiation, vibration, thermal. Several sources for 0.3 - 2 THz are reviewed: FIR lasers, quantum cascade lasers (QCL), backward-wave oscillator (BWO), and Multiplier sources. The current state of the art (SoA) is shown as Substrateless Technology. It also shows where the SoA is for devices beyond 1 THz. The presentation concludes by reviewing the options for future development, and 2 technology roadmaps
submillimeter wave↗