Engineering topics
Publications and source records attributed to Scheick, L. Z..
A review of the radiation effects investigation capabilities of the JPL Dynamitron Accelerator Facility are discussed. A process for its use in performing total ionizing dose (TID) studies are outlined. The results of radiation effects in complicated test systems where device effects may occur due to local system irradiation are also presented.
Single event rates (SER) can include contributions from low-energy particles such that the linear energy transfer (LET) is not constant. Previous work found that the environmental description that is most relevant to the low-energy contribution to the rate is a "stopping rate per unit volume" even when the physical mechanisms for a single-event effect do not require an ion to stop in some device region. Stopping rate tables are presented for four heavy-ion environments that are commonly used to assess device suitability for space applications. A conservative rate estimate utilizing limited test data is derived, and the example of SEGR rate in a power MOSFET is presented.
A new test bed for life testing flash memories in extreme environments is introducted. the test bed is based on a state-of-the-art development board. Since space applications often desire state-of-the-art devices, such a basis seems appropriate. Comparison of this tester to other such systems, including those with data presented here in the past is made. Limitations of different testers for varying applications are discussed. Recently developed data, using this test bed is also presented.
We report on TID and SEE tests of multi-level and higher density flash memories. Stand-by currents and functionality tests were used to characterize the respons of radiation-induced failures.
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Heavy ion irradiation of high-voltage power MOSFETs with long-range ions was performed using 14, 19, 22, 24, 28 and 39 MeV-cm2/mg ions.
A new method using an array of MOS transistors isdescribed for measuring dose absorbed from ionizingradiation. Using the array of MOSFETs in a SRAM, a direct measurement of the number of MOS cells which change as a function of applied bias on the SRAM. Since the input and output of a SRAM used as a dosimeter is completely digital, the measurement of dose is easily accessible by a remote processing system.
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This paper presents TID testing of 64 Kb Ramtron FM1608 and 256 Kb Ramtron FM1808.
The test results of measurements performed on two different sizes of ferroelectric random access memory (FeRAM) suggest the degradation is due to the low radiation tolerance of sense amplifiers and reference voltage generators which are based on commercial complementary metal oxide semiconductor (CMOS) technology. This paper presents total ionizing dose (TID) testing of 64Kb Ramtron FM1608 and 256Kb Ramtron FM1808.
Radiation exposure of certain types of devices tends to stick bits, causing them to not be read out correctly after programming.
The radiation effects that affect various systems that comprise floating gate memories are presented. The wear-out degradation results of unirradiated flash memories are compared to irradiated flash memories. The procedure analyzes the failure to write and erase caused by wear-out and degradation of internal charge pump circuits. A method is described for characterizing the radiation effects of the floating gate itself. The rate dependence, stopping power dependence, SEU susceptibility and applications of floating gate in radiation environment are presented. The ramifications for dosimetry and cell failure are discussed as well as for the long term use aspects of non-volatile memories.
The radiation effects that affect various systems that comprise floating gate memories are presented.