Engineering topics

Satoh, Shu

Publications and source records attributed to Satoh, Shu.

3 records

DOE OSTI2012

Beam energy tracking system on Optima XEx high energy ion implanter

The Axcelis Optima XEx high energy implanter is an RF linac-based implanter with 12 RF resonators for beam acceleration. Even though each acceleration field is an alternating, sinusoidal RF field, the well known phase-focusing principle produces a beam with a sharp quasi-monoenergetic energy spectrum. A magnetic energy filter after the linac further attenuates the low energy continuum in the energy spectrum often associated with RF acceleration. The final beam energy is a function of the phase and amplitude of the 12 resonators in the linac. When tuning a beam, the magnetic energy filter is set to the desired energy, and each linac parameter is tuned to maximize the transmission through the filter. Once a beam is set up, all the parameters are stored in a recipe, which can be easily tuned and has proven to be quite repeatable. The magnetic field setting of the energy filter selects the beam energy from the RF Linac accelerator, and in-situ verification of beam energy in addition to the magnetic energy filter setting has long been desired. An independent energy tracking system was developed for this purpose, using the existing electrostatic beam scanner as a deflector to construct an in-situ electrostatic energy analyzer. This paper will describe the system and performance of the beam energy tracking system.

43 PARTICLE ACCELERATORS↗

DOE OSTI2011

Angle Performance on Optima XE

Angle control on high energy implanters is important due to shrinking device dimensions, and sensitivity to channeling at high beam energies. On Optima XE, beam-to-wafer angles are controlled in both the horizontal and vertical directions. In the horizontal direction, the beam angle is measured through a series of narrow slits, and any angle adjustment is made by steering the beam with the corrector magnet. In the vertical direction, the beam angle is measured through a high aspect ratio mask, and any angle adjustment is made by slightly tilting the wafer platen during implant.Using a sensitive channeling condition, we were able to quantify the angle repeatability of Optima XE. By quantifying the sheet resistance sensitivity to both horizontal and vertical angle variation, the total angle variation was calculated as 0.04 deg. (1{sigma}). Implants were run over a five week period, with all of the wafers selected from a single boule, in order to control for any crystal cut variation.

43 PARTICLE ACCELERATORS↗

DOE OSTI2011

Dose Control System in the Optima XE Single Wafer High Energy Ion Implanter

Photoresist outgassing can significantly compromise accurate dosimetry of high energy implants. High energy implant even at a modest beam current produces high beam powers which create significantly worse outgassing than low and medium energy implants and the outgassing continues throughout the implant due to the low dose in typical high energy implant recipes. In the previous generation of high energy implanters, dose correction by monitoring of process chamber pressure during photoresist outgassing has been used. However, as applications diversify and requirements change, the need arises for a more versatile photoresist correction system to match the versatility of a single wafer high energy ion implanter. We have successfully developed a new dosimetry system for the Optima XE single wafer high energy ion implanter which does not require any form of compensation due to the implant conditions. This paper describes the principles and performance of this new dose system.

43 PARTICLE ACCELERATORS↗