DOE OSTI2013
This is a report on the new 122 ternary transition-metal pnictide of BaMn{sub 2}Bi{sub 2}, which is crystallized from bismuth flux. BaMn{sub 2}Bi{sub 2} adopts ThCr{sub 2}Si{sub 2}-type structure (I4/mmm) with a=4.4902(3) Å and c=14.687(1) Å; it is antiferromagnetic with anisotropic magnetic susceptibility and semiconducting with a band gap of E{sub g}=6 meV. Heat capacity result confirms the insulating ground state in BaMn{sub 2}Bi{sub 2} with the electronic residual Sommerfeld coefficient of γ=0. The high temperature magnetization results show that magnetic ordering temperature is T{sub N} ∼400 K. Hole-doping in BaMn{sub 2}Bi{sub 2} via potassium in Ba{sub 1−x}K{sub x}Mn{sub 2}Bi{sub 2} results in metallic behavior for x=0.10(1), 0.32(1) and 0.36(1). With K-doping, more magnetically anisotropic behavior is observed. Although there is a downturn in electrical resistivity and low-field magnetization data below 4 K in>30%-doped crystals, there is no sign of zero resistance or diamagnetism. - Graphical abstract: Local moment antiferromagnet BaMn{sub 2}Bi{sub 2}, the first bismuthide with ThCr{sub 2}Si{sub 2} structure, turns metallic upon K-doping. Highlights: • BaMn{sub 2}Bi{sub 2} and Ba{sub 1−x}K{sub x}Mn{sub 2}Bi{sub 2} (0≤x<0.4) measuring up to 1 cm in length have been synthesized from Bi flux reactions. • BaMn{sub 2}Bi{sub 2} is the first bismuthide with ThCr{sub 2}Si{sub 2}-type structure. • BaMn{sub 2}Bi{sub 2} is a small gap semiconductor but, upon hole-doping, turns metallic with a downturn in resistivity below 4 K. • BaMn{sub 2}Bi{sub 2} is a local moment antiferromagnet with T{sub N} ∼400 K.
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