Engineering topics

Rong, X.

Publications and source records attributed to Rong, X..

5 records

DOE OSTI2014

Ensemble-Based Parameter Estimation in a Coupled General Circulation Model

Parameter estimation provides a potentially powerful approach to reduce model bias for complex climate models. Here, in a twin experiment framework, the authors perform the first parameter estimation in a fully coupled ocean–atmosphere general circulation model using an ensemble coupled data assimilation system facilitated with parameter estimation. The authors first perform single-parameter estimation and then multiple-parameter estimation. In the case of the single-parameter estimation, the error of the parameter [solar penetration depth (SPD)] is reduced by over 90% after ~40 years of assimilation of the conventional observations of monthly sea surface temperature (SST) and salinity (SSS). The results of multiple-parameter estimation are less reliable than those of single-parameter estimation when only the monthly SST and SSS are assimilated. Assimilating additional observations of atmospheric data of temperature and wind improves the reliability of multiple-parameter estimation. The errors of the parameters are reduced by 90% in ~8 years of assimilation. Finally, the improved parameters also improve the model climatology. With the optimized parameters, the bias of the climatology of SST is reduced by ~90%. Altogether, this study suggests the feasibility of ensemble-based parameter estimation in a fully coupled general circulation model.

54 ENVIRONMENTAL SCIENCES↗

DOE OSTI2014

Ensemble-Based Parameter Estimation in a Coupled GCM Using the Adaptive Spatial Average Method

Ensemble-based parameter estimation for a climate model is emerging as an important topic in climate research. And for a complex system such as a coupled ocean–atmosphere general circulation model, the sensitivity and response of a model variable to a model parameter could vary spatially and temporally. An adaptive spatial average (ASA) algorithm is proposed to increase the efficiency of parameter estimation. Refined from a previous spatial average method, the ASA uses the ensemble spread as the criterion for selecting “good” values from the spatially varying posterior estimated parameter values; these good values are then averaged to give the final global uniform posterior parameter. In comparison with existing methods, the ASA parameter estimation has a superior performance: faster convergence and enhanced signal-to-noise ratio.

54 ENVIRONMENTAL SCIENCES↗

DOE OSTI2014

Multi-bands photoconductive response in AlGaN/GaN multiple quantum wells

Based on the optical transitions among the quantum-confined electronic states in the conduction band, we have fabricated multi-bands AlGaN/GaN quantum well infrared photodetectors. Crack-free AlGaN/GaN multiple quantum wells (MQWs) with atomically sharp interfaces have been achieved by inserting an AlN interlayer, which releases most of the tensile strain in the MQWs grown on the GaN underlayer. With significant reduction of dark current by using thick AlGaN barriers, photoconductive responses are demonstrated due to intersubband transition in multiple regions with center wavelengths of 1.3, 2.3, and 4 μm, which shows potential applications on near infrared detection.

36 MATERIALS SCIENCE↗

DOE OSTI2013

Role of an ultra-thin AlN/GaN superlattice interlayer on the strain engineering of GaN films grown on Si(110) and Si(111) substrates by plasma-assisted molecular beam epitaxy

We investigate the role of an ultra-thin AlN/GaN superlattice interlayer (SL-IL) on the strain engineering of the GaN films grown on Si(110) and Si(111) substrates by plasma-assisted molecular beam epitaxy. It is found that micro-cracks limitted only at the SL-IL position are naturally generated. These micro-cracks play an important role in relaxing the tensile strain caused by the difference of the coefficient of thermal expansion between GaN and Si and keeping the residual strain in the crack-free GaN epilayers resulted from the SL-IL during the growth. The mechanism understanding of the strain modulation by the SL-IL in the GaN epilayers grown on Si substrates makes it possible to design new heterostructures of III-nitrides for optic and electronic device applications.

36 MATERIALS SCIENCE↗

DOE OSTI2013

Effect of polarization on intersubband transition in AlGaN/GaN multiple quantum wells

Intersubband transitions (ISBT) of AlGaN/GaN multiple quantum wells (MQWs) with wavelength towards atmospheric window (3-5 {mu}m) have been investigated. A Ga-excess epitaxial method is used in the molecular beam epitaxy leading to ultra-sharp interface and negligible elements inter-diffusion. The absorption peak wavelength of the ISBT was successfully tuned in the range of 3-4 {mu}m by modifying the GaN well thickness from 2.8 to 5.5 nm. It was further found that the polarization charge density of the AlGaN/GaN MQWs was about -0.034 C/m{sup 2} which gave rise to blueshift of the ISBT wavelength and thus partially compensated its redshift with increasing well thickness.

36 MATERIALS SCIENCE↗