Engineering topics

Romanofsky, Robert R.

Publications and source records attributed to Romanofsky, Robert R..

At least 55 records · Page 3

NASA NTRS1997

Thin Film Multilayer Conductor/Ferroelectric Tunable Microwave Components for Communication Applications

High Temperature Superconductor/Ferroelectric (HTS/FE ) thin film multilayered structures deposited onto dielectric substrates are currently being investigated for use in low loss, tunable microwave components for satellite and ground based communications. The main goal for this technology is to achieve maximum tunability while keeping the microwave losses as low as possible, so as to avoid performance degradation when replacing conventional technology (e.g., filters and oscillators) with HTS/FE components. Therefore, for HTS/FE components to be successfully integrated into current working systems, full optimization of the material and electrical properties of the ferroelectric films, without degrading those of the HTS film; is required. Hence, aspects such as the appropriate type of ferroelectric and optimization of the deposition conditions (e.g., deposition temperature) should be carefully considered. The tunability range as well as the microwave losses of the desired varactor (i.e., tunable component) are also dependent on the geometry chosen (e.g., parallel plate capacitor, interdigital capacitor, coplanar waveguide, etc.). In addition, the performance of the circuit is dependent on the location of the varactor in the circuit and the biasing circuitry. In this paper, we will present our results on the study of the SrTiO3/YBa2Cu3O(7-delta)/LaAl03 (STO/YBCO/LAO) and the Ba(x)Sr(1-x)TiO3/YBa2Cu3O(7-delta)/LaAl03(BSTO/YBCO/ILAO) HTS/FE multilayered structures. We have observed that the amount of variation of the dielectric constant upon the application of a dc electric field is closely related to the microstructure of the film. The largest tuning of the STO/YBCO/LAO structure corresponded to single-phased, epitaxial STO films deposited at 800 C and with a thickness of 500 nm. Higher temperatures resulted in interfacial degradation and poor film quality, while lower deposition temperatures resulted in films with lower dielectric constants, lower tunabilities, and higher losses. For STO/LAO multilayer structures having STO film of similar quality we have observed that interdigital capacitor configurations allow for higher tunabilities and lower losses than parallel plate configurations, but required higher dc voltage. Results on the use of these geometries in working microwave components such as filters and stabilizing resonators for local oscillators (LO) will be discussed.

Miranda, Felix A.↗

NASA NTRS1997

Direct Data Distribution From Low-Earth Orbit

NASA Lewis Research Center (LeRC) is developing the space and ground segment technologies necessary to demonstrate a direct data distribution (1)3) system for use in space-to-ground communication links from spacecraft in low-Earth orbit (LEO) to strategically located tracking ground terminals. The key space segment technologies include a K-band (19 GHz) MMIC-based transmit phased array antenna, and a multichannel bandwidth- and power-efficient digital encoder/modulate with an aggregate data rate of 622 Mb/s. Along with small (1.8 meter), low-cost tracking terminals on the ground, the D3 system enables affordable distribution of data to the end user or archive facility through interoperability with commercial terrestrial telecommunications networks. The D3 system is applicable to both government and commercial science and communications spacecraft in LEO. The features and benefits of the D3 system concept are described. Starting with typical orbital characteristics, a set of baseline requirements for representative applications is developed, including requirements for onboard storage and tracking terminals, and sample link budgets are presented. Characteristics of the transmit array antenna and digital encoder/modulator are described. The architecture and components of the tracking terminal are described, including technologies for the next generation terminal. Candidate flights of opportunity for risk mitigation and space demonstration of the D3 features are identified.

Budinger, James M.↗

NASA NTRS1997

High-Temperature Superconducting/Ferroelectric Structures for Tunable Microwave Components

At the NASA Lewis Research Center, ferroelectric films, such as SrTiO3 and Ba(x)Sr(1-x)TiO3, are being used in conjunction with YBa2Cu3O(7-delta) high-temperature superconducting (HTS) thin films to fabricate tunable microwave components, such as filters, varactors, and local oscillators. These structures capitalize on the variation of the dielectric constant of the ferroelectric film upon the application of a dc electric field as well as on the low microwave losses exhibited by the high-temperature superconducting films relative to their conventional conductor counterparts. (For example, the surface resistance for a YBa2Cu3O(7-delta) thin film at 10 GHz and 77 K is more than two orders of magnitude lower than that of copper at the same frequency and temperature.) SrTiO3 and Ba(x)Sr(1-x)TiO3 films are used because their crystal structure and lattice parameters are similar to those of YBa2Cu3O(7-delta), thus enabling the growth of highly textured YBa2Cu3O(7-delta) films with high critical current densities on the underlying ferroelectric film, or alternatively, of highly textured ferroelectric film on the underlying YBa2Cu3O(7-delta) film. Our efforts have been concentrated so far in determining the deposition parameters required for optimal ferroelectric thin-film growth (i.e., maximum tunability and lowest loss) and in investigating different varactor configurations to determine which geometry is the most advantageous in terms of tunability, losses, and required bias for a given communication application. For example, we have observed that for optimized SrTiO3 films in a parallel plate capacitor, tunabilities of up to 47 percent and dissipation losses (tan d) of 0.05 are attainable at 1 MHz , 80 K, and within the 0- to 5-V bias range. In contrast, for an interdigital configuration, tunabilities of up to 70 percent and tan d ranging from 0.015 to 0.001 (depending on bias) have been observed at 1 MHz and 77 K within the 0- to 100-V bias range. Efforts are underway to use these results in developing tunable receiver front-end preselect filters as well as in low-phase noise, tunable local oscillators for K-band applications. These components represent a hitherto unavailable technology to meet the stringent performance requirements of foreseeable satellite and wireless communication systems (e.g., bandwidth, in-band insertion losses, out-of-band rejection, and noise, amongst others) in a more advantageous fashion than with currently available technology (e.g., dielectric-filled cavity and waveguide filters, and dielectric resonator oscillators). Prototypes of high-temperature superconducting/ferroelectric tunable components such as a low-phase noise K-band local oscillator, a preselect C-band filter, and a low-loss K-band phase shifter are under development at NASA Lewis.

Miranda, Felix A.↗

NASA NTRS1996

On the Relationship Between Schottky Barrier Capacitance and Mixer Performance at Cryogenic Temperatures

The flat-band voltage is the Schottky junction voltage required to shrink the depletion width to zero. At cryogenic temperatures, mixer diodes are generally biased and/or pumped beyond the flat-band condition to minimize conversion loss and noise figure. This occurs despite the presumed sharp increase in junction capacitance near flat-band, which should instead limit mixer performance. Past moderate forward bias, the diode C-V relationship is difficult to measure. A simple analytic expression for C(V) is usually used to model and predict mixer performance. This letter provides experimental data on C(V) at 77 K based on a microwave measurement and modeling technique. Data is also provided on the conversion loss of a singly balanced mixer optimized for 77 K operation. The connection between junction capacitance, flat-band potential, and conversion loss is examined. It is shown that the analytic expression greatly overestimates the junction capacitance that occurs as flat-band is approached.

Romanofsky, Robert R.↗

NASA NTRS1995

Correction Factor for Determining the London Penetration Depth from Strip Resonators

A significant disagreement is often seen between the theoretical temperature dependent magnetic penetration depth profile and experimentally derived calculations based on stripline type resonators. This short paper shows that the disagreement can be attributed to the susceptance coupled into the resonator from the gap discontinuity as well as the feed line. When the effect is taken into account, the natural resonant frequency of the resonator is increased, and the frequency shift due to kinetic inductance can be calculated much more accurately. While it is necessary to include this effect to determine the penetration depth, it is shown that the impact on unloaded quality factor is generally negligible. The situation when the strip characteristic impedance is not matched to the generator is included.

Romanofsky, Robert R.↗

NASA NTRS1995

An X-Band Mixer Engineered for 77 K Operation

An X-band Si-diode singly balanced mixer developed specifically for cryogenic operation is presented. In order to reduce thermal demands on a mechanical cooler, the mixer was designed to operate with a minimum of local oscillator (LO) power. That is, since the LO had to be cooled to reduce phase noise, it was desirable to minimize the LO drive. Novel embedding circuit strategy was responsible for nearly theoretical performance. The signal-matching circuit simultaneously provided a reactive termination to the image, sum, and first, second, and third LO harmonic frequencies. A conversion loss of 3.2 dB at 77 K with an LO drive of +1 dBm was measured. This loss included IF filter, dc block, and hybrid coupler losses. Mixer conversion loss is shown to be consistent with the theoretical performance limit expected from the intrinsic diode. The relationship among junction capacitance, flat-band potential, and conversion loss is examined.

Romanofsky, Robert R.↗

NASA NTRS1995

Superconducting Field-Effect Transistors

Devices offer switching speeds greater than semiconducting counterparts. High-Tc superconducting field-effect transistors (SUPEFETs) investigated for use as electronic switches in delay-line-type microwave phase shifters. Resemble semiconductor field-effect transistors in some respects, but their operation based on different principle; namely, electric-field control of transition between superconductivity and normal conductivity.

Bhasin, Kul↗

NASA NTRS1994

Cryogenic probe station for use in automated microwave and noise figure measurements

A cryogenic measurement system capable of performing on-wafer RF testing of semiconductor devices and circuits has been developed. This 'CryoProbe Station' can wafer-probe devices and circuits at cryogenic temperatures, thus eliminating the need for wire bonds. The system operates under vacuum created by a sorption pump. It uses an open cycle cooling system that can be cooled with either liquid nitrogen or liquid helium. Presently, it can reach temperatures, as low as 80 K and 37 K for each of the coolants, respectively. The temperature can be raised using a heater and it is stabilized to within 0.2 K by use of a temperature controller. The CryoProbe Station features a 1 by 2 inch stage that can hold large circuits and calibration standards simultaneously. The system is used with a Hewlett Packard 8510C Automatic Network Analyzer (ANA) to obtain S-parameter data over the frequency range 0.045-26.5 GHz. S-parameter data on HEMT (high electron mobility transistors) devices has been obtained with this station. With the use of DEEMBED software from NIST, detailed transmission line studies have been performed. Although the CryoProbe Station is designed for frequencies up to 26.5 GHz, useful transmission line data has been obtained for frequencies as high as 40 GHz. The CryoProbe station has also been used with the ATN noise figure measurement system to perform automatic, temperature dependent noise figure measurements.

Taub, Susan R.↗

NASA NTRS1993

An x-band peeled HEMT amplifier

A discrete peeled high electron mobility transistor (HEMT) device was integrated into a 10 GHz amplifier. The discrete HEMT device interconnects were made using photo patterned metal, stepping from the 10 mil alumina host substrate onto the 1.3 microns thick peeled GaAs HEMT layer, eliminating the need for bond wires and creating a fully integrated circuit. Testing of devices indicate that the peeled device is not degraded by the peel off step but rather there is an improvement in the quantum well carrier confinement. Circuit testing resulted in a maximum gain of 8.5 dB and a return loss minimum of -12 dB.

Young, Paul G.↗

NASA NTRS1993

A 10-GHz amplifier using an epitaxial lift-off pseudomorphic HEMT device

A process to integrate epitaxial lift-off devices and microstrip circuits has been demonstrated using a pseudomorphic HEMT on an alumina substrate. The circuit was a 10 GHz amplifier with the interconnection between the device and the microstrip circuit being made with photolithographically patterned metal. The measured and modeled response correlated extremely well with a maximum gain of 6.8 dB and a return loss of -14 dB at 10.4 GHz.

Young, Paul G.↗

NASA NTRS1992

Monolithic mm-wave phase shifter using optically activated superconducting switches

A phase shifter is disclosed having a reference path and a delay path, light sources, and superconductive switches. Each of the superconductive switches is terminated in a virtual short circuit, which may be a radial stub. Switching between the reference path and delayed path is accomplished by illuminating the superconductive switches connected to the desired path, while not illuminating the superconductive switches connected to the other path.

Romanofsky, Robert R.↗

NASA NTRS1991

Microwave integrated circuits for space applications

Monolithic microwave integrated circuits (MMIC), which incorporate all the elements of a microwave circuit on a single semiconductor substrate, offer the potential for drastic reductions in circuit weight and volume and increased reliability, all of which make many new concepts in electronic circuitry for space applications feasible, including phased array antennas. NASA has undertaken an extensive program aimed at development of MMICs for space applications. The first such circuits targeted for development were an extension of work in hybrid (discrete component) technology in support of the Advanced Communication Technology Satellite (ACTS). It focused on power amplifiers, receivers, and switches at ACTS frequencies. More recent work, however, focused on frequencies appropriate for other NASA programs and emphasizes advanced materials in an effort to enhance efficiency, power handling capability, and frequency of operation or noise figure to meet the requirements of space systems.

Leonard, Regis F.↗

NASA NTRS1991

Comparative study of bolometric and non-bolometric switching elements for microwave phase shifters

The performance of semiconductor and high critical temperature superconductor switches is compared as they are used in delay-line-type microwave and millimeter-wave phase shifters. Such factors as their ratios of the off-to-on resistances, parasitic reactances, power consumption, speed, input-to-output isolation, ease of fabrication, and physical dimensions are compared. Owing to their almost infinite off-to-on resistance ratio and excellent input-to-output isolation, bolometric superconducting switches appear to be quite suitable for use in microwave phase shifters; their only drawbacks are their speed and size. The SUPERFET, a novel device whose operation is based on the electric field effect in high critical temperature ceramic superconductors is also discussed. Preliminary results indicate that the SUPERFET is fast and that it can be scaled; therefore, it can be fabricated with dimensions comparable to semiconductor field-effect transistors.

Tabib-Azar, Massood↗

NASA NTRS1991

Prospects and progress of high Tc superconductivity for space applications

Current research in the area of high temperature superconductivity is organized around four key areas: communications and data, sensors and cryogenics, propulsion and power, and space materials technology. Recently, laser ablated YBa2Cu3O(7-x) films on LaAlO3 produced far superior RF characteristics when compared to metallic films on the same substrate. The achievement has enabled a number of unique microwave device applications, such as low insertion loss phase shifters and high-Q filters. Melt texturing and melt-quenched techniques are being used to produce bulk material with optimized magnetic properties. These yttrium-enriched materials possess enhanced flux pinning characteristics and could lead to prototype cryocooler bearings. Significant progress has also occurred in bolometer and current lead technology. Studies were conducted to evaluate the effect of high temperature superconducting materials on the performance and life of high power magnetoplasma-dynamic thrusters. Extended studies were also performed to evaluate the benefit of superconducting magnetic energy storage for LEO space station, lunar, and Mars mission applications.

Romanofsky, Robert R.↗

NASA NTRS1991

Comparative study of bolometric and non-bolometric switching elements for microwave phase shifters

Tabib-Azar, Massood↗

NASA NTRS1990

Universal nondestructive mm-wave integrated circuit test fixture

Monolithic microwave integrated circuit (MMIC) test includes a bias module having spring-loaded contacts which electrically engage pads on a chip carrier disposed in a recess of a base member. RF energy is applied to and passed from the chip carrier by chamfered edges of ridges in the waveguide passages of housings which are removably attached to the base member. Thru, Delay, and Short calibration standards having dimensions identical to those of the chip carrier assure accuracy and reliability of the test. The MMIC chip fits in an opening in the chip carrier with the boundaries of the MMIC lying on movable reference planes thereby establishing accuracy and flexibility.

Romanofsky, Robert R.↗

NASA NTRS1990

Aerospace applications of high temperature superconductivity

A review is presented of all the applications that are part of the NASA program to develop space technology capitalizing on the potential benefit of high temperature superconducting materials. The applications in three major areas are being pursued: sensors and cryogenic systems, space communications, and propulsion and power systems. This review places emphasis on space communications applications and the propulsion and power applications. It is concluded that the power and propulsion applications will eventually be limited by structural considerations rather than by the availability of suitable superconductors. A cursory examination of structural limitations implied by the virial theorem suggested that there is an upper limit to the size of high field magnetic systems that are feasible in space.

Connolly, D. J.↗

NASA NTRS1990

Experimental investigations on channelized coplanar waveguide

A new variant of coplanar waveguide (CPW) which was termed channelized coplanar waveguide (CCPW) is presented. Measured propagation characteristics for CCPW such as epsilon(eff) and unloaded Q as a function of geometrical parameters and frequency are presented. The measured and modeled epsilon(eff) are also compared. Equivalent circuit model element values are presented for a CCPW open circuit and a CCPW right angle bend. A CCPW matched T-junction, matched 1:3 junction, and a novel coax-to-CCPW in-phase, N-way, radial power divider are also demonstrated.

Simons, Rainee N.↗