Engineering topics
Publications and source records attributed to Robertson, J. B..
Full-color, matrix-addressed electroluminescent display uses three different color phosphors located in two separate, superimposed layers to provide higher brightness, better contrast ratio, and higher resolution. Design used for such transparent, flat-panel display media as thin-film electroluminescent phosphors, liquid crystals, or light-emitting diodes.
The effects of long-duration space exposure and launch environment on the performance of pyroelectric detectors which is important for the prediction of performance degradation, setting exposure limits, or determining shielding requirements was investigated. Air pollution monitoring and thermal mapping of the Earth, which includes the remote sensing of aerosols and limb scanning infrared radiometer projects, requires photodetection in the 6- to 20 micro m region of the spectrum. Pyroelectric detectors can detect radiation in the 1- to 100 micro m region while operating at room temperature. This makes tahe pyroelectric detector a prime candidate to fill the thermal infrared detector requirements.
The operative principles and progress to date on producing thin-film electroluminescent displays (TFEL) are discussed. TFEL displays consist of conductive, insulating and phosphor film layers deposited on a glass substrate. Applying a 200 V potential between the rows and columns in a multiplexed mode causes light to be emitted. Varying the voltage varies the grey level. The panels provide adequate contrast in full sunlight, and have demanded only 4-6 W for 15 sq in. displays. Alphanumeric, graphics, and video images have been generated with a 51 line by 80 character display. The upper limit on the panel size has not yet been defined. Efforts are under way to produce multicolor displays using red and blue phosphors. Trial units are being studied for avionics displays for, e.g., navigation, multipurpose displays, and attitude/direction indicators.
A pryoelectric detector array and the method for making it are described. A series of holes formed through a silicon dioxide layer on the surface of a silicon substrate forms the mounting fixture for the pyroelectric detector array. A series of nontouching strips of indium are formed around the holes to make contact with the backside electrodes and form the output terminals for individual detectors. A pyroelectric detector strip with front and back electrodes, respectively, is mounted over the strip. Biasing resistors are formed on the surface of the silicon dioxide layer and connected to the strips. A metallized pad formed on the surface of the layer is connected to each of the biasing resistors and to the film to provide the ground for the pyroelectric detector array.
A pyroelectric detector array and the method for using it are described. A series of holes formed through a silicon dioxide layer on the surface of a silicon substrate forms the mounting fixture for the pyroelectric detector array. A series of nontouching strips of indium are formed around the holes to make contact with the backside electrodes and form the output terminals for individual detectors. A pyroelectric detector strip with front and back electrodes, respectively, is mounted over the strips. Biasing resistors are formed on the surface of the silicon dioxide layer and connected to the strips. A metallized pad formed on the surface of layer is connected to each of the biasing resistors and to the film to provide the ground for the pyroelectric detector array.
A computer-generated perspective tunnel display for a steep and strongly curved three-dimensional helicopter approach is studied. The necessary control variables for following a curved trajectory are analyzed, the effectiveness of superimposed predictor symbology is investigated, and a suitable predictor law is formulated. The theoretical considerations are validated by an extensive fixed-base simulator program. The tunnel display with a superimposed predictor symbol is shown to outperform conventional-type displays in its abilities to follow a curved trajectory in the presence of gust disturbances, to enter the trajectory from an unknown position outside this trajectory, as well as to monitor automatic approaches. The feasibility of the tunnel display for operation in actual flight has been demonstrated in an exploratory flight test.
The display was evaluated by monitoring pilot performance in a fixed base simulator with the vehicle dynamics of a CH-47 tandem rotor helicopter. Superposition of the predicted future vehicle position on the tunnel image was also investigated to determine whether, and to what extent, it contributes to better system performance (the best predicted future vehicle position was sought). Three types of simulator experiments were conducted: following a desired trajectory in the presence of disturbances; entering the trajectory from a random position, outside the trajectory; detecting and correcting failures in automatic flight. The tunnel display with superimposed predictor/director symbols was shown to be a very successful combination, which outperformed the other two displays in all three experiments. A prediction time of 4 to 7 sec. was found to optimize trajectory tracking for the given vehicle dynamics and flight condition. Pilot acceptance of the tunnel plus predictor/director display was found to be favorable and the time the pilot needed for familiarization with the display was found to be relatively short.
Technique is developed at Langley Research Center for mounting pyroelectric detector arrays on silicon integrated circuits. Procedure incorporates normal silicon integrated-circuit technology to form quasi-free mounts for detector arrays. Advantages of technique include lower cost, better image registration, and improved reliability.
Current efforts on a new Cockpit Avionics Research program are described. The major thrusts of the program presented include: a comparative analysis of advanced display media and development of promising selected media, development of flight display generation techniques, and identification and development of promising I/O technology. In addition, the advanced integrated display concepts described include a 'tunnel in the sky' display and a traffic situation display with associated keyboard. Finally, the Cockpit Avionics Research program is summarized, future research plans are presented, and the need for an expanded program is discussed.
A series of commercially available pyroelectric detectors made from PVF2, LTO, SBN, and TGS were evaluated in terms of responsivity and detectivity as a function of frequency. The performance of the detectors evaluated was very different, depending upon the manufacturer of the detector, and this dependency was primarily related to the thickness of the various detectors. The best detectors of each material were comparable in performance at frequencies around 10 Hz but differed radically at frequencies above 100 Hz.
The operational lifetime of liquid crystal displays were investigated. Electrochemical reaction at the electrodes of the display can cause failure after 2000 to 3000 hours of operation. Studies using cyclic voltametry of electrochemical reactions of N (p-methoxybenzilidene p-butylaniline (MBBA), a nematic liquid crystal were made. These studies indicate the presence of a reversible reduction of MBBA at the cathode, and that the reduction product undergoes a further reaction leading to products which are not reversibly oxidized. It is concluded that the degradation of the liquid crystal in displays can be reduced with a suitable frequency of alternating voltage.
The gage factor and resistivity of p-type silicon doped with beryllium was studied as a function of temperature, crystal orientation, and beryllium doping concentration. It was shown that the temperature coefficient of resistance can be varied and reduced to zero near room temperature by varying the beryllium doping level. Similarly, the magnitude of the piezoresistance gage factor for beryllium-doped silicon is slightly larger than for silicon doped with a shallow acceptor impurity such as boron, whereas the temperature coefficient of piezoresistance is about the same for material containing these two dopants. These results are discussed in terms of a model for the piezoresistance of compensated p-type silicon.
An infrared radiation detector including a cadmium sulfide platelet having a cathode formed on one of its ends and an anode formed on its other end is presented. The platelet is suitably doped such that stationary high-field domains are formed adjacent the cathode when based in the negative differential conductivity region. A negative potential is applied to the cathode such that a high-field domain is formed adjacent to the cathode. A potential measuring probe is located between the cathode and the anode at the edge of the high-field domain and means are provided for measuring the potential at the probe whereby this measurement is indicative of the infrared radiation striking the platelet.
New and highly sensitive method of detecting infrared irradiation makes possible solid state infrared detector which is more sensitive near room temperature than usual photoconductive low band gap semiconductor devices. Reconfiguration of high field domains in cadmium sulphide crystals provides basis for discovery.
When beryllium is thermally diffused into silicon, it gives rise to acceptor levels 191 MeV and 145 meV above the valence band. Quenching and annealing studies indicate that the 145-MeV level is due to a more complex beryllium configuration than the 191-MeV level. When lithium is thermally diffused into a beryllium-doped silicon sample, it produces two acceptor levels at 106 MeV and 81 MeV. Quenching and annealing studies indicate that these levels are due to lithium forming a complex with the defects responsible for the 191-MeV and 145-MeV beryllium levels, respectively. Electrical measurements imply that the lithium impurity ions are physically close to the beryllium impurity atoms. The ground state of the 106-MeV beryllium level is split into two levels, presumably by internal strains. Tentative models are proposed.
The resistivity and piezoresistance of p-type silicon doped with beryllium have been studied as a function of temperature, crystal orientation, and beryllium doping concentration. It is shown that the temperature coefficient of resistance can be varied and reduced to zero near room temperature by varying the beryllium doping level. Similarly, the magnitude of the piezoresistance gauge factor for beryllium-doped silicon is slightly larger than for silicon doped with a shallow acceptor impurity such as boron, while the temperature coefficient of piezoresistance is about the same for material containing these two dopants. These results are discussed in terms of a model for the piezoresistance of compensated p-type silicon.
Very large diffusion coefficients were encountered and required the determination of impurity profiles for samples approximately 1 cm thick. Since conductivity values are readily converted into concentrations of electrically active impurities, the major problem became that of accurately determining the conductivity profiles of beryllium diffused silicon samples. Four-point probe measurements on samples having depth conductivities are interpreted in terms of conductivity profiles, based on an exact solution of the problem of exponentially depth dependent conductivity. Applications include surface conductivity determination where the form of the conductivity profile is known, and conductivity profile determination from probe measurements taken as the sample surface is progressively lapped away. The application is limited to samples having conductivity monotonically decreasing with depth from the probed surface.
When beryllium is thermally diffused into silicon, it gives rise to acceptor levels 191 and 145 meV above the valence band. Quenching and annealing studies indicate that the 145-meV level is due to a more complex beryllium configuration than the 191-meV level. When lithium is thermally diffused into a beryllium-doped silicon sample, it produces two new acceptor levels at 106 and 81 meV. Quenching and annealing studies indicate that these new levels are due to lithium forming a complex with the defects responsible for the 191- and 145-meV beryllium levels, respectively. Electrical measurements imply that the lithium impurity ions are physically close to the beryllium impurity atoms. The ground state of the 106-meV beryllium-lithium level is split into two levels, presumably by internal strains. Tentative models are proposed to explain these results.