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Robert S Okojie

Publications and source records attributed to Robert S Okojie.

11 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS2022

Silicon Carbide Sensors and Electronics Technology for Extreme Environments: Opportunities for Nuclear Power Applications

Over the past five decades, NASA Glenn Research Center had been advancing the development of single crystal silicon carbide growth, sensors and electronics device technologies, culminating in the recent demonstration of Micro-Electro-Mechanical Systems scale batch fabricated pressure sensors operating at 800 °C and integrated circuit electronics with demonstrated durability of over 1000 hours at 500 °C. As a result of the progress made in demonstrating the high temperature capability of the technology, insertion into actual operational environments, such as in jet engines and planet Venus, are in progress. The high temperature, near inert surface chemistry, and radiation hardness attributes of SiC, coupled with the relative maturation of the device batch microfabrication, contact metallization, and packaging technologies, make the material a prime candidate for use as part of future advanced nuclear reactor instrumentation and control strategy. Hence the current research efforts at NASA Glenn are aimed toward harnessing these attributes in developing SiC sensors and electronics for nuclear reactor applications, potentially for future Lunar/Martian nuclear power and the emerging terrestrial micro nuclear power plants.

silicon carbide↗
NASA NTRS2004

Method of Assembling a Silicon Carbide High Temperature Anemometer

A high temperature anemometer includes a pair of substrates. One of the substrates has a plurality of electrodes on a facing surface, while the other of the substrates has a sensor cavity on a facing surface. A sensor is received in the sensor cavity, wherein the sensor has a plurality of bondpads, and wherein the bondpads contact the plurality of electrodes when the facing surfaces are mated with one another. The anemometer further includes a plurality of plug-in pins, wherein the substrate with the cavity has a plurality of trenches with each one receiving a plurality of plug-in pins. The plurality of plug-in pins contact the plurality of electrodes when the substrates are mated with one another. The sensor cavity is at an end of one of the substrates such that the sensor partially extends from the substrate. The sensor and the substrates are preferably made of silicon carbide.

Robert S Okojie↗
NASA NTRS2004

Method for Forming MEMS-Based Spinning Nozzle

A nozzle body and assembly for delivering atomized fuel to a combustion chamber. The nozzle body is rotatably mounted onto a substrate. One or more curvilinear fuel delivery channels are in flow communication with an internal fuel distribution cavity formed in the nozzle body. Passage of pressurized fuel through the nozzle body causes the nozzle body to rotate. Components of the nozzle assembly are formed of silicon carbide having surfaces etched by deep reactive ion etching utilizing MEMS technology. A fuel premix chamber is carried on the substrate in flow communication with a supply passage in the nozzle body.

Robert S Okojie↗
NASA NTRS2004

Multi-Functional, Micro Electromechanical Silicon Carbide Accelerometer

A method of bulk manufacturing SiC sensors is disclosed and claimed. Materials other than SiC may be used as the substrate material. Sensors requiring that the SiC substrate be pierced are also disclosed and claimed. A process flow reversal is employed whereby the metallization is applied first before the recesses are etched into or through the wafer. Aluminum is deposited on the entire planar surface of the metallization. Photoresist is spun onto the substantially planar surface of the Aluminum which is subsequently masked (and developed and removed). Unwanted Aluminum is etched with aqueous TMAH and subsequently the metallization is dry etched. Photoresist is spun onto the still substantially planar surface of Aluminum and oxide and then masked (and developed and removed) leaving the unimidized photoresist behind. Next, ITO is applied over the still substantially planar surface of Aluminum, oxide and unimidized photoresist. Unimidized and exposed photoresist and ITO directly above it are removed with Acetone. Next, deep reactive ion etching attacks exposed oxide not protected by ITO. Finally, hot phosphoric acid removes the Al and ITO enabling wires to connect with the metallization. The back side of the SiS wafer may be also etched.

Robert S Okojie↗
NASA NTRS2003

MEMS-Based Spinning Nozzle

A nozzle body and assembly for delivering atomized fuel to a combustion chamber. The nozzle body is rotatably mounted onto a substrate. One or more curvilinear fuel delivery channels are in flow communication with an internal fuel distribution cavity formed in the nozzle body. Passage of pressurized fuel through the nozzle body causes the nozzle body to rotate. Components of the nozzle assembly are formed of silicon carbide having surfaces etched by deep reactive ion etching utilizing MEMS (micro-electro-mechanical systems) technology. A fuel premix chamber is carried on the substrate in flow communication with a supply passage in the nozzle body.

Robert S Okojie↗
NASA NTRSDate not supplied

Evaluation of Silicon Carbide Pressure Sensor in Turbofan Engine Core Exhaust Nozzle

We report the results of the evaluation of single crystal 4H-silicon carbide piezoresistive pressure sensors that were directly inserted at the compressor and core exhaust nozzle exits, in shear contact with the engine-internal flow streams of the NASA DGEN Aeropropulsion Research Turbofan, where the operating temperatures at maximum power were ~230 oC, and ~460 oC, respectively. In addition to demonstrating sensor survivability during this maiden test, the frequency responses of the silicon-carbide sensors at the core-nozzle exit were compared against industry-standard silicon-based piezoresistive pressure transducers that externally placed, using an infinite-tube-probe arrangement. The low-voltage output of these early-development SiC sensors limited the frequency range with an acceptable signal-to-noise-ratio for the current application to less than about 2,500 Hz. The low output of the SiC sensors were due to a conservative burst-pressure diaphragm design that can be optimized to increase the frequency range. The results from this initial campaign offered insights to aspects of the sensor that would require further improvement, with the goal of achieving full-bandwidth capture of engine unsteady pressure fluctuations by direct interrogation of the flow field in hostile-environment engine-core components.

Silicon Carbide↗