Engineering topics

Reynolds, J. K.

Publications and source records attributed to Reynolds, J. K..

8 records

NASA NTRS1993

Micromachined electron tunneling infrared sensors

The development of an improved Golay cell is reported. This new sensor is constructed entirely from micromachined silicon components. A silicon oxynitride (SiO(x)N(y)) membrane is deflected by the thermal expansion of a small volume of trapped gas. To detect the motion of the membrane, an electron tunneling transducer is used. This sensor detects electrons which tunnel through the classically forbidden barrier between a tip and a surface; the electron current is exponentially dependent on the separation between the tip and the surface. The sensitivity of tunneling transducers constructed was typically better than 10(exp -3) A/square root of Hz. Through use of the electron tunneling transducer, the scaling laws which have prevented the miniaturization of the Golay cell are avoided. This detector potentially offers low cost fabrication, compatibility with silicon readout electronics, and operation without cooling. Most importantly, this detector may offer better sensitivity than any other uncooled infrared sensor, with the exception of the original Golay cell.

Kenny, T. W.↗

NASA NTRS1993

Micromachined Tunneling Displacement Transducers for Physical Sensors

We have designed and constructed a series of tunneling sensors which take advantage of the extreme position sensitivity of electron tunneling. In these sensors, a tunneling displacement transducer, based on scanning tunneling microscopy principles, is used to detect the signal-induced motion of a sensor element. Through the use of high-resonant frequency mechanical elements for the transducer, sensors may be constructed which offer wide bandwidth, and are robust and easily operated. Silicon micromachining may be used to fabricate the transducer elements, allowing integration of sensor and control electronics. Examples of tunneling accelerometers and infrared detectors will be discussed. In each case, the use of the tunneling transducer allows miniaturization of the sensor as well as enhancement of the sensor performance.

Kenny, T. W.↗

NASA NTRS1992

Electron tunnel sensors

We have used the extreme sensitivity of electron tunneling to variations in electrode separation to construct a novel, compact displacement transducer. Electrostatic forces are used to control the separation between the tunneling electrodes, thereby eliminating the need for piezoelectric actuators. The entire structure is composed of micromachined silicon single crystals. Applications of the tunneling displacement transducer to the measurement of acceleration and infrared signals are discussed. Measurements of acceleration and infrared sensitivity are reported.

Kenny, T. W.↗

NASA NTRS1992

A miniature high-resolution accelerometer utilizing electron tunneling

New methods have been developed to implement high-resolution position sensors based on electron tunneling. These methods allow miniaturization while utilizing the position sensitivity of electron tunneling to give high resolution. A single-element tunneling accelerometer giving a displacement resolution of 0.002 A/sq rt Hz at 10 Hz, corresponding to an acceleration resolution of 5 x 10 exp -8 g/sq rt Hz, is described. A new dual-element tunneling structure which overcomes the narrow bandwidth limitations of a single-element structure is described. A sensor with an operating range of 5 Hz to 10 kHz, which can have applications as an acoustic sensor, is discussed. Noise is analyzed for fundamental thermal vibration of the suspended masses and is compared to electronic noise. It is shown that miniature tunnel accelerometers can achieve resolution such that thermal noise in the suspended masses is the dominant cause of the resolution limit. With a proof mass of order 100 mg, noise analysis predicts limiting resolutions approaching 10 exp -9 g/sq rt Hz in a 300 Hz band and 10 exp -8 g/sq rt Hz at 1 kHz.

Rockstad, Howard K.↗

NASA NTRS1991

Novel infrared detector based on a tunneling displacement transducer

The paper describes the design, fabrication, and characteristics of a novel infrared detector based on the principle of Golay's (1947) pneumatic infrared detector, which uses the expansion of a gas to detect infrared radiation. The present detector is constructed entirely from micromachined silicon and uses an electron tunneling displacement transducer for the detection of gas expansion. The sensitivity of the new detector is competitive with the best commercial pyroelectric sensors and can be readily improved by an order of magnitude through the use of an optimized transducer.

Kenny, T. W.↗

NASA NTRS1991

Electron tunnel sensor technology

Researchers designed and constructed a novel electron tunnel sensor which takes advantage of the mechanical properties of micro-machined silicon. For the first time, electrostatic forces are used to control the tunnel electrode separation, thereby avoiding the thermal drift and noise problems associated with piezoelectric actuators. The entire structure is composed of micro-machined silicon single crystals, including a folded cantilever spring and a tip. The application of this sensor to the development of a sensitive accelerometer is described.

Kenny, T. W.↗

NASA NTRS1991

Micromachined silicon tunnel sensor for motion detection

The extreme sensitivity of electron tunneling to variations in electrode separation has been used to construct a novel, compact displacement transducer. Electrostatic forces are used to control the separation between the tunneling electrodes, thereby eliminating the need for piezoelectric actuators. The entire structure is composed of micromachined silicon single crystals, including a folded cantilever spring and a tip. Measurements of displacement sensitivity and noise are reported. This device offers a substantial improvement over conventional technology for applications which require compact, highly sensitive transducers.

Kenny, T. W.↗

NASA NTRS1990

A novel electron tunneling infrared detector

The pneumatic infrared detector, originally developed by Golay in the late 1940s, uses the thermal expansion of one cm(exp 3) of xenon at room temperature to detect the heat deposited by infrared radiation. This detector was limited by thermal fluctuations within a 10 Hz bandwidth, but suffered from long thermal time constants and a fragile structure. Nevertheless, it represents the most sensitive room temperature detector currently available in the long wavelength infrared (LWIR). Fabrication of this type of detector on smaller scales has been limited by the lack of a suitably sensitive transducer. Researchers designed a detector based on this principle, but which is constructed entirely from micromachined silicon, and uses a vacuum tunneling transducer to detect the expansion of the trapped gas. Because this detector is fabricated using micromachining techniques, miniaturization and integration into one and two-dimensional arrays is feasible. The extreme sensitivity of vacuum tunneling to changes in electrode separation will allow a prototype of this detector to operate in the limit of thermal fluctuations over a 10 kHz bandwidth. A calculation of the predicted response and noise of the prototype is presented with the general formalism of thermal detectors. At present, most of the components of the prototype have been fabricated and tested independently. In particular, a characterization of the micromachined electron tunneling transducer has been carried out. The measured noise in the tunnel current is within a decade of the limit imposed by shot noise, and well below the requirements for the operation of an infrared detector with the predicted sensitivity. Assembly and characterization of the prototype infrared detector will be carried out promptly.

Kenny, T. W.↗