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Reno, John L.

Publications and source records attributed to Reno, John L..

At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Analyzing the effect of doping concentration in split-well resonant-phonon terahertz quantum cascade lasers

The effect of doping concentration on the temperature performance of the novel split-well resonant-phonon (SWRP) terahertz quantum-cascade laser (THz QCL) scheme supporting a clean 4-level system design was analyzed using non-equilibrium Green’s functions (NEGF) calculations. Experimental research showed that increasing the doping concentration in these designs led to better results compared to the split-well direct-phonon (SWDP) design, which has a larger overlap between its active laser states and the doping profile. However, further improvement in the temperature performance was expected, which led us to assume there was an increased gain and line broadening when increasing the doping concentration despite the reduced overlap between the doped region and the active laser states. Through simulations based on NEGF calculations we were able to study the contribution of the different scattering mechanisms on the performance of these devices. We concluded that the main mechanism affecting the lasers’ temperature performance is electron-electron (e-e) scattering, which largely contributes to gain and line broadening. Interestingly, this scattering mechanism is independent of the doping location, making efforts to reduce overlap between the doped region and the active laser states less effective. Optimization of the e-e scattering thus could be reached only by fine tuning of the doping density in the devices. By uncovering the subtle relationship between doping density and e-e scattering strength, our study not only provides a comprehensive understanding of the underlying physics but also offers a strategic pathway for overcoming current limitations. This work is significant not only for its implications on specific devices but also for its potential to drive advancements in the entire THz QCL field, demonstrating the crucial role of e-e scattering in limiting temperature performance and providing essential knowledge for pushing THz QCLs to new temperature heights.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2024

Extraction of the electron excess temperature in terahertz quantum cascade lasers from laser characteristics

Abstract We propose a method to extract the upper laser level’s (ULL’s) excess electronic temperature from the analysis of the maximum light output power ( P max ) and current dynamic range Δ J d = ( J max − J th ) of terahertz quantum cascade lasers (THz QCLs). We validated this method, both through simulation and experiment, by applying it on THz QCLs supporting a clean three-level system. Detailed knowledge of electronic excess temperatures is of utmost importance in order to achieve high temperature performance of THz QCLs. Our method is simple and can be easily implemented, meaning an extraction of the excess electron temperature can be achieved without intensive experimental effort. This knowledge should pave the way toward improvement of the temperature performance of THz QCLs beyond the state-of-the-art.

47 OTHER INSTRUMENTATION↗
DOE OSTI2024

Doping engineering: Next step toward room temperature performance of terahertz quantum cascade lasers

We hereby offer a comprehensive analysis of various factors that could potentially enable terahertz quantum cascade lasers (THz QCLs) to achieve room temperature performance. We thoroughly examine and integrate the latest findings from recent studies in the field. Our work goes beyond a mere analysis; it represents a nuanced and comprehensive exploration of the intricate factors influencing the performance of THz QCLs. Through a comprehensive and holistic approach, we propose novel insights that significantly contribute to advancing strategies for improving the temperature performance of THz QCLs. This all-encompassing perspective allows us not only to present a synthesis of existing knowledge but also to offer a fresh and nuanced strategy to improve the temperature performance of THz QCLs. We draw new conclusions from prior works, demonstrating that the key to enhancing THz QCL temperature performance involves not only optimizing interface quality but also strategically managing doping density, its spatial distribution, and profile. This is based on our results from different structures, such as two experimentally demonstrated devices: the spit-well resonant-phonon and the two-well injector direct-phonon schemes for THz QCLs, which allow efficient isolation of the laser levels from excited and continuum states. In these schemes, the doping profile has a setback that lessens the overlap of the doped region with the active laser states. Our work stands as a valuable resource for researchers seeking to gain a deeper understanding of the evolving landscape of THz technology. Furthermore, we present a novel strategy for future endeavors, providing an enhanced framework for continued exploration in this dynamic field. This strategy should pave the way to potentially reach higher temperatures than the latest records reached for T max of THz QCLs.

47 OTHER INSTRUMENTATION↗
DOE OSTI2023

Two-well injector direct-phonon terahertz quantum cascade lasers

We present an experimental study on a terahertz quantum cascade laser (THz QCL) design that combines both two-well injector and direct-phonon scattering schemes, i.e., a so-called two-well injector direct-phonon design. As a result of the two-well injector direct-phonon scheme presented here, the lasers benefit from both a direct phonon scattering scheme for the lower laser level depopulation and a setback for the doping profile that reduces the overlap of the doped region with active laser states. Additionally, our design also has efficient isolation of the active laser levels from excited and continuum states as indicated by negative differential resistance behavior all the way up to room temperature. This scheme serves as a good platform for improving the temperature performance of THz QCLs as indicated by the encouraging temperature performance results of the device with a relatively high doping level of 7.56 × 10 10 cm −2 and T max ∼ 167 K. With the right optimization of the molecular beam epitaxy growth and interface quality, the injection coupling strength, and the doping density and its profile, the device could potentially reach higher temperatures than the latest records reached for the maximum operating temperature (T max ) of THz QCLs.

47 OTHER INSTRUMENTATION↗
DOE OSTI2023

Split-well resonant-phonon terahertz quantum cascade laser

We present a highly diagonal “split-well resonant-phonon” (SWRP) active region design for GaAs/Al 0.3 Ga 0.7 As terahertz quantum cascade lasers (THz-QCLs). Negative differential resistance is observed at room temperature, which indicates the suppression of thermally activated leakage channels. The overlap between the doped region and the active level states is reduced relative to that of the split-well direct-phonon (SWDP) design. The energy gap between the lower laser level (LLL) and the injector is kept at 36 meV, enabling a fast depopulation of the LLL. Within this work, we investigated the temperature performance and potential of this structure.

47 OTHER INSTRUMENTATION↗
DOE OSTI2023

Phase Locking of a THz QC-VECSEL to a Microwave Reference

We report high-resolution frequency study and phase locking have been performed on a terahertz (THz) quantum-cascade vertical-external-cavity surface-emitting laser (QC-VECSEL) operating around 2.5 THz. A subharmonic diode mixer is used to down convert the THz signal to a 100 MHz intermediate frequency that is phase locked to a stable 100 MHz microwave reference. Between 90% and 95% of the QC-VECSEL signal is locked within 2 Hz of the multiplied RF reference, and amplitude fluctuations on the order of 1%–10% are observed, depending on the bias point of the QC-VECSEL. The bandwidth of the locking loop is ~1 MHz. Many noise peaks in the IF signal are observed, likely corresponding to mechanical resonances in the 10 Hz–10 kHz. These peaks are generally -30 to -60 dB below the main tone and are below the phase noise level of the multiplied RF reference that ultimately limits the phase noise of the locked QC-VECSEL.

42 ENGINEERING↗
DOE OSTI2022

Wavelength Scaling of Widely-Tunable Terahertz Quantum-Cascade Metasurface Lasers

Terahertz (THz) external-cavity lasers based on quantum-cascade (QC) metasurfaces are emerging as widely-tunable, single-mode sources with the potential to cover the 1--6 THz range in discrete bands with milliwatt-level output power. By operating on an ultra-short cavity with a length on the order of the wavelength, the QC vertical-external-cavity surface-emitting-laser (VECSEL) architecture enables continuous, broadband tuning while producing high quality beam patterns and scalable power output. The methods and challenges for designing the metasurface at different frequencies are discussed. As the QC-VECSEL is scaled below 2 THz, the primary challenges are reduced gain from the QC active region, increased metasurface quality factor and its effect on tunable bandwidth, and larger power consumption due to a correspondingly scaled metasurface area. At frequencies above 4.5 THz, challenges arise from a reduced metasurface quality factor and the excess absorption that occurs from proximity to the Reststrahlen band. The results of four different devices — with center frequencies 1.8 THz, 2.8 THz, 3.5 THz, and 4.5 THz — are reported. Each device demonstrated at least 200 GHz of continuous single-mode tuning, with the largest being 650 GHz around 3.5 THz. The limitations of the tuning range are well modeled by a Fabry-Pérot cavity which accounts for the reflection phase of the metasurface and the effect of the metasurface quality factor on laser threshold. Lastly, the effect of different output couplers on device performance is studied, demonstrating a significant trade-off between the slope efficiency and tuning bandwidth.

47 OTHER INSTRUMENTATION↗
DOE OSTI2022

Measurement of amplification and absorption of a THz quantum-cascade metasurface free-space amplifier

An active amplifying metasurface based on a quantum-cascade gain material at 2.7 THz is studied. The metasurface is first evaluated as the active component of an external cavity laser with excellent beam quality and frequency tunability from 2.55–2.8 THz. Amplification and absorption of the metasurface alone are then separately measured at a single frequency using a probe signal from a CO 2 -pumped gas laser operating at 2.743 THz. The metasurface reflectance vs bias is measured and compared with expectations from non-equilibrium Green’s function simulations of the quantum-cascade gain material and FEM simulations of the metasurface reflectance. A peak amplification on the order of 0.3 dB is measured. Design strategies are discussed for increasing single-reflection amplification (upward of 10 dB) and reducing power dissipation. Further increased amplification could be achieved by cascading multiple metasurfaces.

Curwen, Christopher A.↗
DOE OSTI2022

Terahertz Detection Using Enhanced Two‐Step Absorption in Photoconductive Metasurfaces Gated at λ = 1.55 µm

Abstract Superior ultrafast photoconductive properties make low temperature grown (LT) GaAs one of the best materials for photoconductive terahertz (THz) detection. However, the large bandgap of LT‐GaAs limits its operation to gating at wavelengths shorter than 870 nm. Here, it is demonstrated for the first time that nanostructuring the LT‐GaAs into a highly absorbing metasurface enables THz photoconductive detection with a pulsed laser at λ = 1.55 µm. The very weak sub‐bandgap absorption mediated by midgap states in LT‐GaAs is strongly enhanced using the concept of perfect absorption via degenerate critical coupling. Integrated with a THz antenna, the LT‐GaAs metasurface enables high sensitivity THz detection with a high dynamic range of 60 dB and large bandwidth up to 4.5 THz. The LT‐GaAs metasurface has the potential to serve as a universal ultrafast switching element for THz applications, enabling low‐cost, turn‐key THz systems for a variety of real‐world applications.

Jung, Hyunseung↗
DOE OSTI2021

Thin THz QCL active regions for improved continuous-wave operating temperature

We compare the performance of 10 and 5 μm thick metal–metal waveguide terahertz quantum-cascade laser ridges operating around 2.7 THz and based on a 4-well phonon depopulation active region design. Thanks to reduced heat dissipation and lower thermal resistance, the 5 μm thick material shows an 18 K increase in continuous wave operating temperature compared to the 10 μm material, despite a lower maximum pulsed-mode operating temperature and a larger input power density. A maximum continuous wave operating temperature of 129 K is achieved using the 5 μm thick material and a 15 μm wide ridge waveguide, which lased up to 155 K in the pulsed mode. The use of thin active regions is likely to become increasingly important to address the increasing input power density of emerging 2- and 3-well active region designs that show the highest pulsed operating temperatures.

47 OTHER INSTRUMENTATION↗
DOE OSTI2021

THz time-domain characterization of amplifying quantum-cascade metasurface

An amplifying quantum-cascade (QC) metasurface, the key component of the QC vertical-external-cavity surface-emitting-laser (VECSEL), is studied as a function of injected current density using reflection-mode terahertz time domain spectroscopy. Nearly perfect absorption is measured at zero bias, which is associated with the transition from the weak to strong coupling condition between the metasurface resonance and an intersubband transition within the QC material. An increase in reflectance is observed as the device is biased, both due to reduction in intersubband loss and the presence of intersubband gain. Significant phase modulation associated with the metasurface resonance is observed via electrical control, which may be useful for electrical tuning of QC-VECSEL. These results provide insight into the interaction between the intersubband QC-gain material and the metasurface and modify the design rules for QC-VECSELs for both biased and unbiased regions.

42 ENGINEERING↗
DOE OSTI2021

Tunable quantum-cascade VECSEL operating at 19 THz

We report a terahertz quantum-cascade vertical-external-cavity surface-emitting laser (QC-VECSEL) emitting around 1.9 THz with up to 10% continuous fractional frequency tuning of a single laser mode. The device shows lasing operation in pulsed mode up to 102 K in a high-quality beam, with the maximum output power of 37 mW and slope efficiency of 295 mW/A at 77 K. Challenges for up-scaling the operating wavelength in QC metasurface VECSELs are identified.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2021

Artificial High-Transition Temperature Superconductors

In this work, we have used the well-understood quantum Hall (QH) stripes in high quality two-dimensional electron gases to mimic charge stripes in high transition temperature (Tc) superconductors. The science question we want to address is “Can QH stripes mimic high Tc superconductor stripes and provide a controlled experimental setup to pin-down the role of stripes in high Tc superconductivity?”. We have observed anomalous superconducting transition like behavior in GaAs double quantum well systems (DQWs) when each quantum well (QW) is tuned to the charge stripe states but with different Landau level fillings. Furthermore, we have shown that the transition like behavior is sharper in the DQWs when the two QWs are more strongly coupled. Our results suggest, for the first time, experimental evidence of the paired charge stripes model, which might lead to room-temperature superconductors that have enormously wide applications in computing, energy, and transportation industries. Advancing the science of high transition temperature superconductivity will have a profound impact in advancing energy technologies, ranging from the next generation microchips, new energy transfer grid to public transportation, and thus is important to nation’s energy security and relevant across the landscape of many mission spaces. Sandia has been a leader in materials science research and development. The proposed research takes advantage of Sandia’s state-ofthe-art MBE facilities at the Center for Integrated Nanotechnologies (CINT) and utilizes Sandia’s extensive advanced materials characterization resources. We envision a significant impact on the nation’s energy research and security challenges by investing in this research.

36 MATERIALS SCIENCE↗