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Engineering topics

Ren, Zhifeng

Publications and source records attributed to Ren, Zhifeng.

Physical origins of the varying performance and unusual transport behaviors among thermoelectric A Mg 2 Sb 2 materials ( A = Ca, Sr, Sm, Yb, and Mg)

Contrary to the similar thermoelectric performance among both AZn 2 Sb 2 and AMg 2 Bi 2 compounds, their isostructural counterparts, AMg 2 Sb 2 , can exhibit thermoelectric figure of merit values that vary by orders of magnitude with different A elements. Here, we reveal physical origins accounting for the significantly differing performance among AMg 2 Sb 2 -based compounds (A = Ca, Sr, Sm, Yb, and Mg) through comprehensive analyses, where it is shown that the dispar- ities in performance at the macroscale essentially originate from the widely varying activation energies that equal amounts of dopant can induce. Meanwhile, a few unusual transport behaviors regarding electrical conductivity, carrier concentration, or lattice thermal con- ductivity among these compounds have been identified, and we also present their rationales in depth. Furthermore, this mechanism-focused study can not only promote further understanding of the complex transport behaviors in condensed matter but be instrumental in rationally tun- ing the physical properties of materials as well.

36 MATERIALS SCIENCE↗

ZrCoBi based half Heuslers with high thermoelectric conversion efficiency

A method of thermoelectric power generation by converting heat to electricity via the use of a ZrCoBi-based thermoelectric material, wherein a thermoelectric conversion efficiency of the ZrCoBi-based thermoelectric material is greater than or equal to 7% at a temperature difference of up to 800 K.

Ren, Zhifeng↗

Bifunctional porous non-noble metal phosphide catalyst for overall water splitting and methods of making and using same

A method of electrocatalytic water splitting by providing an anode and a cathode; and utilizing the anode and the cathode for alkaline water electrolysis. Each of the anode and the cathode comprises a uniform distribution of a bifunctional electrocatalyst comprising metallic phosphides on a conductive substrate. The metallic phosphides comprise arion phosphide (FeP) and dinickel phosphide (Ni 2 P). The bifunctional electrocatalyst promotes hydrogen evolution reaction (HER) at the cathode, and oxygen evolution reaction (OER) at the anode.

Ren, Zhifeng↗

Zintl compounds with high thermoelectric performance and methods of manufacture thereof

Systems and methods discussed herein relate to Zintl-type thermoelectric materials, including a p-type thermoelectric material according to the formula AM y X y , and includes at least one of calcium (Ca), europium (Eu), ytterbium (Yb), and strontium (Sr), and has a ZT of the above about 0.60 above 675K. The n-type thermoelectric component includes magnesium (Mg), tellurium (Te), antimony (Sb), and bismuth (Bi) according to the formula Mg 3.2 Sb 1.3 Bi 0.5-x Te x that has an average ZT above 0.8 from 400K to 800K. The p-type and n-type materials discussed herein may be used alone, in combination with other materials, or in combination with each other in various configurations.

30 DIRECT ENERGY CONVERSION↗

Semi-tubular carbon film for stable lithium metal anodes and methods of manufacture thereof

A method of forming a battery electrode by forming, on a first substrate, a polymer template comprising interconnected polymer fibers, forming, on the polymer template, a carbon coating to form a carbon-coated polymer template, removing the carbon-coated polymer template from the first substrate, subsequent to removing the carbon-coated polymer template from the first substrate, removing the polymer template from the carbon coating, and disposing the carbon coating on a second substrate. A solid electrolyte interphase layer (SEI) comprising the carbon coating produced via the method, a battery electrode comprising such an SEI layer, and a battery comprising such a battery electrode are also provided.

Ren, Zhifeng↗

Persistent hot carrier diffusion in boron arsenide single crystals imaged by ultrafast electron microscopy

Cubic boron arsenide (BAs) is promising for microelectronics thermal management because of its high thermal conductivity. Recently, its potential as an optoelectronic material is also being explored. However, it remains challenging to measure its photocarrier transport properties because of small sizes of available high-quality crystals. Here, we use scanning ultrafast electron microscopy (SUEM) to directly visualize the diffusion of photocarriers in BAs single crystals. Surprisingly, we observed ambipolar diffusion at low optical fluence with persistent hot carrier dynamics for above 200 ps, which can likely be attributed to the large frequency gap between acoustic and optical phonons, the same feature that is responsible for the high thermal conductivity. At higher optical fluence, we observed spontaneous electron-hole separation. Our results show BAs is an attractive optoelectronic material combining high thermal conductivity and excellent photocarrier transport properties. Finally, our study also demonstrates the capability of SUEM to probe photocarrier transport in emerging materials.

36 MATERIALS SCIENCE↗

Methods for making bifunctional porous non-noble metal phosphide catalyst for overall water splitting, electrodes for overall water splitting, and methods for electrocatalytic water splitting

A method of manufacturing a bifunctional electrocatalyst for overall water splitting comprising oxygen evolution reaction (OER) and hydrogen evolution reaction (HER) by growing electrocatalyst comprising primarily metallic phosphides on a three-dimensional substrate by: immersing the substrate in an iron nitrate solution to form a once disposed substrate; subjecting the once disposed substrate to thermal phosphidation with phosphorus powder under inert gas to grow metal phosphides thereupon and form a once subjected substrate; cooling the once subjected substrate to form a cooled, once subjected substrate; immersing the cooled, once subjected substrate in an iron nitrate solution to form a twice disposed substrate; and subjecting the twice disposed substrate to thermal phosphidation with phosphorus powder under inert gas to provide an electrode comprising the bifunctional electrocatalyst on the three-dimensional substrate.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Nanocomposites with High Thermoelectric Figures of Merit

The present invention is generally directed to nanocomposite thermoelectric materials that exhibit enhanced thermoelectric properties. The nanocomposite materials include two or more components, with at least one of the components forming nano-sized structures within the composite material. The components are chosen such that thermal conductivity of the composite is decreased without substantially diminishing the composite's electrical conductivity. Suitable component materials exhibit similar electronic band structures. For example, a band-edge gap between at least one of a conduction band or a valence band of one component material and a corresponding band of the other component material at interfaces between the components can be less than about 5k(sub B)T, wherein k(sub B) is the Boltzman constant and T is an average temperature of said nanocomposite composition.

Chen, Gang↗

Thermoelectric Skutterudite Compositions and Methods for Producing the Same

Compositions related to skutterudite-based thermoelectric materials are disclosed. Such compositions can result in materials that have enhanced ZT values relative to one or more bulk materials from which the compositions are derived. Thermoelectric materials such as n-type and p-type skutterudites with high thermoelectric figures-of-merit can include materials with filler atoms and/or materials formed by compacting particles (e.g., nanoparticles) into a material with a plurality of grains each having a portion having a skutterudite-based structure. Methods of forming thermoelectric skutterudites, which can include the use of hot press processes to consolidate particles, are also disclosed. The particles to be consolidated can be derived from (e.g., grinded from), skutterudite-based bulk materials, elemental materials, other non-Skutterudite-based materials, or combinations of such materials.

Ren, Zhifeng↗

Nanocomposites with high thermoelectric figures of merit

The present invention is generally directed to nanocomposite thermoelectric materials that exhibit enhanced thermoelectric properties. The nanocomposite materials include two or more components, with at least one of the components forming nano-sized structures within the composite material. The components are chosen such that thermal conductivity of the composite is decreased without substantially diminishing the composite's electrical conductivity. Suitable component materials exhibit similar electronic band structures. For example, a band-edge gap between at least one of a conduction band or a valence band of one component material and a corresponding band of the other component material at interfaces between the components can be less than about 5k.sub.BT, wherein k.sub.B is the Boltzman constant and T is an average temperature of said nanocomposite composition.

Chen, Gang↗

Thermoelectric properties by high temperature annealing

The present invention generally provides methods of improving thermoelectric properties of alloys by subjecting them to one or more high temperature annealing steps, performed at temperatures at which the alloys exhibit a mixed solid/liquid phase, followed by cooling steps. For example, in one aspect, such a method of the invention can include subjecting an alloy sample to a temperature that is sufficiently elevated to cause partial melting of at least some of the grains. The sample can then be cooled so as to solidify the melted grain portions such that each solidified grain portion exhibits an average chemical composition, characterized by a relative concentration of elements forming the alloy, that is different than that of the remainder of the grain.

Ren, Zhifeng↗

Metal-doped semiconductor nanoparticles and methods of synthesis thereof

The present invention generally relates to binary or higher order semiconductor nanoparticles doped with a metallic element, and thermoelectric compositions incorporating such nanoparticles. In one aspect, the present invention provides a thermoelectric composition comprising a plurality of nanoparticles each of which includes an alloy matrix formed of a Group IV element and Group VI element and a metallic dopant distributed within the matrix.

Ren, Zhifeng↗

Nanocomposites with high thermoelectric figures of merit

The present invention is generally directed to nanocomposite thermoelectric materials that exhibit enhanced thermoelectric properties. The nanocomposite materials include two or more components, with at least one of the components forming nano-sized structures within the composite material. The components are chosen such that thermal conductivity of the composite is decreased without substantially diminishing the composite's electrical conductivity. Suitable component materials exhibit similar electronic band structures. For example, a band-edge gap between at least one of a conduction band or a valence band of one component material and a corresponding band of the other component material at interfaces between the components can be less than about 5k.sub.BT, wherein k.sub.B is the Boltzman constant and T is an average temperature of said nanocomposite composition.

Chen, Gang↗

Methods for synthesis of semiconductor nanocrystals and thermoelectric compositions

The present invention provides methods for synthesis of IV VI nanostructures, and thermoelectric compositions formed of such structures. In one aspect, the method includes forming a solution of a Group IV reagent, a Group VI reagent and a surfactant. A reducing agent can be added to the solution, and the resultant solution can be maintained at an elevated temperature, e.g., in a range of about 20.degree. C. to about 360.degree. C., for a duration sufficient for generating nanoparticles as binary alloys of the IV VI elements.

Ren, Zhifeng↗