Engineering topics

Reich, Carey

Publications and source records attributed to Reich, Carey.

15 records

DOE OSTI2024

As‐Doped Polycrystalline CdSeTe: Localized Defects, Carrier Mobility and Lifetimes, and Impact on High‐Efficiency Solar Cells

Abstract The efficiency potential for single‐junction photovoltaics (PV) is described by the detailed balance model, which requires the elimination of nonradiative recombination and perfect minority carrier collection. Improvements in GaAs, Si, and perovskite PV follow this model. It might be more complex for CdTe, a leading thin‐film PV technology. While lifetime, passivation, and doping goals for 25% efficient CdTe solar cells are largely reached, voltage is ≈20% below the detailed balance limit. Why is that? In Se‐alloyed CdSe x Te 1‐x (Se is required for >20% efficiency) additional losses can occur due to electrostatic and bandgap fluctuations and due to electronic trap states. To understand mechanisms limiting CdSeTe solar cell performance and to suggest improvements, carrier dynamics, and transport in CdSe x Te 1‐x with variation in Se composition and as doping is analyzed. It is shown that trapping, likely due to anion‐site defects and their complexes, is correlated with low charge carrier mobility of 0.1–0.6 cm 2 (Vs) −1 . Even with 1000 ns charge carrier lifetimes, carrier diffusion length is less than the absorber thickness, reducing efficiency to ≈23%. Device simulations are used to analyze the performance of CdSe x Te 1‐x solar cells; thermodynamic models are not sufficient for absorbers with electronic disorder and trapping.

14 SOLAR ENERGY↗

DOE OSTI2023

Why Increased CdSeTe Charge Carrier Lifetimes and Radiative Efficiencies did not Result in Voltage Boost for CdTe Solar Cells

After a focused effort over the last decade, order-of-magnitude improvements in doping and electro-optical characteristics (radiative efficiency, carrier lifetime, and passivation) have been reported for polycrystalline CdSeTe solar cells. Surprisingly, this did not result in higher solar cell voltages regardless of device contacting layers, absorber grading profiles, and other changes in device architecture. From detailed evaluation of radiative emission and carrier dynamics in CdSeTe heterostructures and devices, it is shown that the complexity introduced to the absorber to achieve lifetime and passivation metrics resulted in charge carrier trapping, which now negatively affects CdSeTe absorbers.

CdTe↗

DOE OSTI2023

A comprehensive material study of CdSeTe films deposited with differing selenium compositions

The addition of selenium into CdTe to create the ternary alloy CdSeTe has been one of the most impactful advancements to CdTe-based photovoltaics in the last decade. CdSeTe/CdTe bilayer device structures have enabled a gain in short-circuit current due to the narrower bandgap of the alloy, with minimal to no loss in voltage. Intensity of photoluminescence and time-resolved photoluminescence measurements suggest this is due to an increase in carrier lifetime and concomitant greater fraction of radiative vs non-radiative recombination events which allows for a reduction in the voltage deficit. Here, in this work, we study the properties of as-deposited and CdCl 2 -treated CdSeTe films deposited by close-space sublimation under varying conditions from CdSeTe source charges with both 20 and 40 mol% CdSe. We find that the selenium content in the deposited films are substantially reduced from that of the source material. Additionally, deposition temperature, particularly that of the substrate, considerably affects the grain size, crystallinity, and photoluminescence of the material, illustrating the importance of source material selection and process optimization. Finally, we present evidence that the source material, and therefore the properties of the deposited films, change over time as the source material is used.

36 MATERIALS SCIENCE↗

DOE OSTI2022

Electro-Optical Characterization of Arsenic-Doped CdSeTe and CdTe Solar Cell Absorbers Doped in-situ During Close Space Sublimation

Most contemporary device models predict that an acceptor concentration of at least 10^16 cm^-3 is required to reach an open circuit voltage of 1 V in polycrystalline CdTe-based solar cells. While copper has traditionally been used as the de facto p-type dopant in polycrystalline cadmium telluride (CdTe) and cadmium selenide telluride (CdSeTe), reaching high acceptor concentrations has proved to be challenging in such devices due to significant dopant compensation. The acceptor concentration in copper-doped CdTe and CdSeTe typically ranges from 10^13 to 10^15 cm^-3 and routinely exhibit low external radiative efficiencies below 0.01%, limiting their implied voltage (i.e., quasi-Fermi level splitting) to approximately 900 mV. As an alternative to copper, this work explores the use of arsenic as a p-type dopant for CdTe and CdSeTe. Using a novel technique in which a thin layer of arsenic-containing material is deposited and used as a reservoir for arsenic to diffuse into a front layer of previously undoped material, this contribution demonstrates that high external radiative efficiencies are achievable, a direct result of combined high acceptor concentrations and long minority-carrier lifetimes in the absorber. This leads to improved implied voltages, and indicates that As-doping represents a promising pathway towards improving the external voltage of CdSeTe/CdTe solar cells.

cadmium telluride↗

DOE OSTI2022

Understanding What Limits the Voltage of Polycrystalline CdSeTe Solar Cells

The origin of voltage deficits in polycrystalline cadmium selenide telluride (CdSeTe) solar cells is unclear. Here, we present a comprehensive voltage loss analysis performed on state-of-the-art CdSeTe devices - fabricated at Colorado State University and First Solar - using photoluminescence techniques, including external radiative efficiency (ERE) measurements. More specifically, we report the thermodynamic voltage limit Voc,ideal, internal voltage iVoc and external voltage Voc of partially and fully finished cells fabricated with different dopant species, dopant concentrations and back contacts. Arsenic-doped aluminium-oxide-passivated cells made at Colorado State University present remarkably high ERE (>1%) - translating into iVoc above 970 mV - but suffer from poor back-contact selectivity. On the other hand, arsenic-doped devices from First Solar present almost perfect carrier selectivity (Voc=iVoc), leading to Voc above 840 mV, and are limited by recombination in various parts of the device. Thus, development of contact structures that are both passivating and selective in combination with highly luminescent absorbers is key to reducing voltage losses.

CdSeTe devices↗

DOE OSTI2021

Robust passivation of CdSeTe based solar cells using reactively sputtered magnesium zinc oxide

Magnesium zinc oxide (MZO, Mg x Zn 1-x O) is a leading emitter for CdTe-based solar cells due to its transparency and the ability to tune its conduction band offset with the absorber. Devices employing alloyed cadmium selenide telluride (CST, CdSe y Te 1-y ) absorbers achieved high efficiency (>19%) using MZO deposited by reactive sputtering over a broad composition range (3.68–3.92 eV, x: 0.20–0.35). Minimal differences in implied and measured open circuit voltage indicate that the contacts are well passivated and highly selective across the spectrum of MZO employed. Device performance insensitivity to MZO composition, which is not observed in CdTe devices, is attributed to the formation of an oxygenated interface layer. Se volatility creates a group VI deficiency at the interface that drives O migration from the MZO into the absorber. This introduces conductivity in the emitter not present in its as-deposited state, contributing to the exceptional performance observed. It is shown that the quality of device passivation depends on the oxidation state of the as-deposited MZO such that intelligent control and management of the reactive sputtering process is required.

36 MATERIALS SCIENCE↗

DOE OSTI2021

Sub-Bandgap Features in CdSeTe Solar Cells: Parsing the Roles of Material Properties and Cell Optics

In this contribution, we investigate why different dopant species and back-contact architectures lead to different sub-bandgap behaviors in CdSeTe solar cells. Through extraction of the absorptance from photoluminescence spectra, we parse the contributions from material properties and from cell optics. We show that, as expected, arsenic doping leads to an increase in sub-bandgap features over traditional copper doping, and that this is a material property of arsenic-doped CdSeTe. Conversely, the increase in sub-bandgap absorption and emission using alternative back contact architectures can be attributed to the cell optics, and more specifically to the increased reflectance of the back interface, leading to at least a doubling of the pathlength for sub-bandgap photons.

arsenic doping↗

DOE OSTI2021

CdSexTe1-x/CdTe Devices with Reduced Interface Recombination Through Novel Back Contacts and Group-V Doping

Since excellent carrier lifetimes and front interface electronic quality are now achieved, rear interface recombination can limit V OC in CdSexTe1-x/CdTe solar cells. Several back-contact structures for devices were fabricated using combinations of tellurium, aluminum oxide, amorphous silicon, and indium tin oxide (ITO). Time-resolved photoluminescence was used to characterize such structures. We show increasingly improved interface passivation through the subsequent use of aluminum oxide, amorphous silicon, and ITO. Additionally, we show that arsenic-doped absorbers form a more passive interface with numerous back contact structures.

aluminum oxide↗

DOE OSTI2021

Microsecond Carrier Lifetimes in Polycrystalline CdSeTe Heterostructures and in CdSeTe Thin Film Solar Cells

We report significant advances in understanding and reducing nonradiative Shockley-Read-Hall recombination in polycrystalline CdSe x Te 1-x , leading to microsecond charge carrier lifetimes. In undoped Al 2 O 3 -passivated heterostructures we find external radiative efficiency 0.2%, quasi-Fermi level splitting 950 mV, mobility 100 cm 2 /(Vs), and diffusion length 14 µm. In solar cells measured lifetimes can exceed 1 µs. We interpret this data to indicate MgZnO/CdSeTe interface recombination velocity <; 100 cm/s. Based on our results, it appears CdTe PV technology has potentially overcome longstanding “recombination lifetime” limitation and in the near future will transition to improving other aspects of device design.

41 EE - Solar Energy Technologies Office (EE-4S)↗

DOE OSTI2021

Calculation of the Thermodynamic Voltage Limit of CdSeTe Solar Cells

The first step to understand the origin of losses in any photovoltaic solar cell is to determine the fundamental thermodynamic efficiency and voltage limits of such a device. In this contribution, we detail techniques to calculate the voltage limit in the case of cadmium selenium telluride (CdSeTe) solar cells, and how approaches based on bandgap alone—i.e., the Shockley-Queisser approach with step-function absorptance—can overestimate the thermodynamic open-circuit voltage limit Voc,ideal . This is particularly true for arsenic-doped samples, which tend to exhibit below-bandgap absorptance.

absorptance↗

DOE OSTI2020

Determination of Series Resistance in CdSeTe/CdTe Solar Cells by the Jsc–Voc Method

While commonly used in Si solar cell characterization, the Suns–Voc method of determining series resistance (Rs) is rarely used for CdTe and its alloys. However, it is advantageous relative to the slope method—commonly used in the CdTe community—because it measures series resistance at the maximum power point, at which a solar cell operates. Using the self-consistent predecessor to Suns–Voc, Jsc –Voc, , we determine Rs of two different CdSeTe/CdTe solar cell structures to be 0.96 and 2.72 Ωcm2, with repeated measurements showing little deviation

13 HYDRO ENERGY↗

DOE OSTI2020

CdSexTe1-x /CdTe Devices With Reduced Interface Recombination Through Novel Back Contacts and Doping Strategies

In order to study rear interface recombination in CdSexTe1-x/CdTe solar cells, several back contact structures were fabricated using combinations of tellurium, alumina, amorphous silicon, and indium tin oxide. Film side Time-Resolved Photoluminescence measurements were taken to measure carrier lifetimes and interface recombination at the back interface. We show increasingly improved interface passivation through the subsequent use of alumina, amorphous silicon, and ITO. Additionally, we provide evidence that an arsenic-doped absorber forms a better interface with numerous back contact structures. Reductions in the back interface recombination velocity are shown to correlate with improvements in device external radiative efficiency.

13 HYDRO ENERGY↗

DOE OSTI2020

Arsenic Doping of Polycrystalline CdSeTe Devices for Microsecond Life-times with High Carrier Concentrations

We report seminal advances in fabrication and understanding of group V (As) doped thin-film polycrystalline CdTe-based solar cells. The devices are fabricated using a novel approach, by sublimating layers of CdSeTe and CdSeTe:As. This new method allowed us to achieve minority carrier lifetime of over 1 μs, carrier concentration of more than 5x1015 cc-1 and external radiative efficiency of over 2% in a device configuration. We find an increase in open-circuit voltage when comparing As-doped, Cu-doped and undoped devices. The choice of CdSeTe instead of a CdTe-only absorber has been explained using first-principle density functional theory model. A SCAPS device model is used to analyze the potential causes for lower open-circuit voltage.

14 SOLAR ENERGY↗

DOE OSTI2020

Influence of Process Parameters and Absorber Thickness on Efficiency of Polycrystalline CdSeTe/CdTe Thin Film Solar Cells

Graded absorbers devices with with CdSe 0.4 Te 0.6 (molar basis) and CdTe were fabricated. CdCl 2 treatment time, post-deposition CdCl 2 anneal time and thicknesses of CdSeTe and CdTe layers were varied. Photoluminescence and electrical measurements were performed on the fabricated devices. Results revealed that the individual thicknesses of CdSeTe and CdTe is critical to overall efficiency of the devices. Device fabricated on substrate with 0.5 μm CdSeTe, 3 μm CdTe with rest of process parameters kept unchanged, produced an efficiency of 20.14%. We report highest device efficiency among academia and research institutions.

Shimpi, Tushar↗

DOE OSTI2020

Sputtered Aluminum Oxide and p+ Amorphous Silicon Back-Contact for Improved Hole Extraction in Polycrystalline CdSexTe1-x and CdTe Photovoltaics

A thin layer of Al 2 O 3 at the back of CdSe x T e1-x /CdTe devices is shown to passivate the back interface and drastically improve surface recombination lifetimes and photoluminescent response. Despite this, such devices do not show an improvement in open-circuit voltage (VOC.) Adding a p + amorphous silicon layer behind the Al 2 O 3 bends the conduction band upward, reducing the barrier to hole extraction and improving collection. Further optimization of the Al 2 O 3 , amorphous silicon (a-Si), and indium-doped tin oxide (ITO) layers, as well as their interaction with the CdCl 2 passivation process, are necessary to translate these electro-optical improvements into gains in voltage.

14 SOLAR ENERGY↗