Engineering topics

Refaat, Tamer F.

Publications and source records attributed to Refaat, Tamer F..

54 records · Page 3

NASA NTRS2006

Recent Development of Sb-based Phototransistors in the 0.9- to 2.2-microns Wavelength Range for Applications to Laser Remote Sensing

We have investigated commercially available photodiodes and also recent developed Sb-based phototransistors in order to compare their performances for applications to laser remote sensing. A custom-designed phototransistor in the 0.9- to 2.2-microns wavelength range has been developed at AstroPower and characterized at NASA Langley's Detector Characterization Laboratory. The phototransistor's performance greatly exceeds the previously reported results at this wavelength range in the literature. The detector testing included spectral response, dark current and noise measurements. Spectral response measurements were carried out to determine the responsivity at 2-microns wavelength at different bias voltages with fixed temperature; and different temperatures with fixed bias voltage. Current versus voltage characteristics were also recorded at different temperatures. Results show high responsivity of 2650 A/W corresponding to an internal gain of three orders of magnitude, and high detectivity (D*) of 3.9x10(exp 11) cm.Hz(exp 1/2)/W that is equivalent to a noise-equivalent-power of 4.6x10(exp -14) W/Hz(exp 1/2) (-4.0 V @ -20 C) with a light collecting area diameter of 200-microns. It appears that this recently developed 2-micron phototransistor's performances such as responsivity, detectivity, and gain are improved significantly as compared to the previously published APD and SAM APD using similar materials. These detectors are considered as phototransistors based-on their structures and performance characteristics and may have great potential for high sensitivity differential absorption lidar (DIAL) measurements of carbon dioxide and water vapor at 2.05-microns and 1.9-microns, respectively.

Abedin, M. Nurul↗

NASA NTRS2006

Modeling of the Temperature-dependent Spectral Response of In(1-x)Ga(x)Sb Infrared Photodetectors

A model of the spectral responsivity of In(1-x) Ga(x) Sb p-n junction infrared photodetectors has been developed. This model is based on calculations of the photogenerated and diffusion currents in the device. Expressions for the carrier mobilities, absorption coefficient and normal-incidence reflectivity as a function of temperature were derived from extensions made to Adachi and Caughey-Thomas models. Contributions from the Auger recombination mechanism, which increase with a rise in temperature, have also been considered. The responsivity was evaluated for different doping levels, diffusion depths, operating temperatures, and photon energies. Parameters calculated from the model were compared with available experimental data, and good agreement was obtained. These theoretical calculations help to better understand the electro-optical behavior of In(1-x) Ga(x) Sb photodetectors, and can be utilized for performance enhancement through optimization of the device structure.

Gonzalex-Cuevas, Juan A.↗

NASA NTRS2005

Characterization of Custom-Designed Charge-Coupled Devices for Applications to Gas and Aerosol Monitoring Sensorcraft Instrument

Custom-designed charge-coupled devices (CCD) for Gas and Aerosols Monitoring Sensorcraft instrument were developed. These custom-designed CCD devices are linear arrays with pixel format of 512x1 elements and pixel size of 10x200 sq m. These devices were characterized at NASA Langley Research Center to achieve a full well capacity as high as 6,000,000 e-. This met the aircraft flight mission requirements in terms of signal-to-noise performance and maximum dynamic range. Characterization and analysis of the electrical and optical properties of the CCDs were carried out at room temperature. This includes measurements of photon transfer curves, gain coefficient histograms, read noise, and spectral response. Test results obtained on these devices successfully demonstrated the objectives of the aircraft flight mission. In this paper, we describe the characterization results and also discuss their applications to future mission.

Refaat, Tamer F.↗

NASA NTRS2005

Characterization of InGaAs Linear Array for Applications to Remote Sensing

An Indium Gallium Arsenide linear photodiode array in the 1.1-2.5 micron spectral range was characterized. The array has 1024x1 pixels with a 25 micron pitch and was manufactured by Sensors Unlimited, Inc. Characterization and analysis of the electrical and optical properties of a camera system were carried out at room temperature to obtain detector performance parameters. The signal and noise were measured while the array was uniformly illuminated at varying exposure levels. A photon transfer curve was generated by plotting noise as a function of average signal to obtain the camera gain constant. The spectral responsivity was also measured, and the quantum efficiency, read noise and full-well capacity were determined. This paper describes the characterization procedure, analyzes the experimental results, and discusses the applications of the InGaAs linear array to future earth and planetary remote sensing mission.

Garcia, Christopher S.↗

NASA NTRS2005

III-V Compound Detectors for CO2 DIAL Measurements

Profiling of atmospheric carbon dioxide (CO2) is important for understanding the natural carbon cycle on Earth and its influence on global warming and climate change. Differential absorption lidar is a powerful remote sensing technique used for profiling and monitoring atmospheric constituents. Recently there has been an interest to apply this technique, at the 2 m wavelength, for investigating atmospheric CO2. This drives the need for high quality detectors at this wavelength. Although 2 m detectors are commercially available, the quest for a better detector is still on. The detector performance, regarding quantum efficiency, gain and associated noise, affects the DIAL signal-to-noise ratio and background signal, thereby influencing the instrument sensitivity and dynamic range. Detectors based on the III-V based compound materials shows a strong potential for such application. In this paper the detector requirements for a long range CO2 DIAL profiles will be discussed. These requirements were compared to newly developed III-V compound infrared detectors. The performance of ternary InGaSb pn junction devices will be presented using different substrates, as well as quaternary InGaAsSb npn structure. The performance study was based on experimental characterization of the devices dark current, spectral response, gain and noise. The final results are compared to the current state-of-the-art InGaAs technology. Npn phototransistor structure showed the best performance, regarding the internal gain and therefore the device signal-to-noise ratio. 2-micrometers detectivity as high as 3.9 x 10(exp 11) cmHz(sup 1/2)/W was obtained at a temperature of -20 C and 4 V bias voltage. This corresponds to a responsivity of 2650 A/W with about 60% quantum efficiency.

Refaat, Tamer F.↗

NASA NTRS2005

MOVPE of GaSb/InGaAsSb Multilayers and Fabrication of Dual Band Photodetectors

Metalorganic vapor phase epitaxy (MOVPE) of GaSb/InGaAsSb multilayer thin films and fabrication of bias-selectable dual band photodetectors are reported. For the dual band photodetectors the short wavelength detector, or the upper p- GaSb/n-GaSb junction photodiode, is placed optically ahead of the long wavelength one, or the lower photodiode. The latter is based on latticed-matched In0.13Ga0.87As0.11Sb0.89 with bandgap near 0.6 eV. Specifically, high quality multilayer thin films are grown sequentially from top to bottom as p+-GaSb/p-GaSb/n-GaSb/n-InGaAsSb/p-InGaAsSb/p-GaSb on undoped p-type GaSb substrate, and as n-GaSb/p-GaSb/p-InGaAsSb/n-InGaAsSb/n-GaSb on Te-doped n-type GaSb substrate respectively. The multilayer thin films are characterized by optical microscope, atomic force microscope (AFM), electron microprobe analyses etc. The photodiode mesa steps are patterned by photolithography with wet chemical etching and the front metallization is carried out by e-beam evaporation with Pd/Ge/Au/Ti/Au to give ohmic contact on both n- and p-type Sb based layer surfaces. Dark I-V measurements show typical diode behavior for both the upper and lower photodiodes. The photoresponsivity measurements indicate that both the upper and lower photodiodes can sense the infrared illumination corresponding to their cutoff wavelengths respectively, comparable with the simulation results. More work is underway to bring the long wavelength band to the medium infrared wavelength region near 4 micrometers.

Xiao, Ye-Gao↗

NASA NTRS2005

Characterization of Dual-Band Infrared Detectors for Application to Remote Sensing

NASA Langley Research Center (LaRC), in partnership with the Rensselaer Polytechnic Institute (RPI), developed photovoltaic infrared (IR) detectors suitable at two different wavelengths using Sb-based material systems. Using lattice-matched InGaAsSb grown on GaSb substrates, dual wavelength detectors operating at 1.7 and 2.5 micron wavelengths can be realized. P-N junction diodes are fabricated on both GaSb and InGaAsSb materials. The photodiode on GaSb detects wavelengths at 1.7 micron and the InGaAsSb detector detects wavelengths at 2.2 micron or longer depending on the composition. The films for these devices are grown by metal-organic vapor phase epitaxy (MOVPE). The cross section of the independently accessed back-to-back photodiode dual band detector consists of a p-type substrate on which n-on-p GaInAsSb junction is grown, followed by a p-on-n GaSb junction. There are three ohmic contacts in this structure, one to the p-GaSb top layer, one to the n-GaSb/n-GaInAsSb layer and one to the p-type GaSb substrate. The common terminal is the contact to the n-GaSb/n-GaInAsSb layer. The contact to the n-GaSb/p-GaInAsSb region of the photodiode in the dual band is electrically connected and is accessed at the edge of the photodiode. NASA LaRC acquired the fabricated dual band detector from RPI and characterized the detector at its Detector Characterization Laboratory. Characterization results, such as responsivity, noise, quantum efficiency, and detectivity will be presented.

Abedin, M. Nurul↗

NASA NTRS2004

Progress of Multicolor Single Detector to Detector Array Development for Remote Sensing

Knowledge of the spatial and temporal distribution of atmospheric species such as CO2, O3, H2O, and CH4 is important for understanding the chemistry and physical cycles involving Earth s atmosphere. Although several remote sensing techniques are suitable for such measurements they are considered high cost techniques involving complicated instrumentation. Therefore, simultaneous measurement of atmospheric species using a single remote sensing instrument is significant for minimizing cost, size and complexity. While maintaining the instrument sensitivity and range, quality of multicolor detector, in terms of high quantum efficiency and low noise are vital for these missions. As the first step for developing multicolor focal plan array, the structure of a single element multicolor detector is presented in this paper. The detector consists of three p-n junction layers of Si, GaSb and InAs wafer bonded to cover the spectral range UV to 900 nm, 800 nm to 1.7 m, and 1.5 m to 3.4 m, respectively. Modeling of the absorption coefficient for each material was carried out for optimizing the layers thicknesses for maximum absorption. The resulted quantum efficiency of each layer has been determined except InAs layer. The optical and electrical characterization of each layer structure is reported including dark current and spectral response measurements of Si pin structure and of GaSb and InAs p-n junctions. The effect of the material processing is discussed.

Abedin, M. Nurul↗

NASA NTRS2004

Novel Infrared Phototransistors for Atmospheric CO2 Profiling at 2 Micron Wavelength

Two-micron detectors are critical for atmospheric carbon dioxide profiling using the lidar technique. The characterization results of a novel infrared AlGaAsSb/ InGaAsSb phototransistor are reported. Emitter dark current variation with the collector-emitter voltage at different temperatures is acquired to examine the gain mechanism. Spectral response measurements resulted in responsivity as high as 2650 A/W at 2.05 m wavelength. Bias voltage and temperature effects on the device responsivity are presented. The detectivity of this device is compared to InGaAs and HgCdTe devices.

Refaat, Tamer F.↗

NASA NTRS2004

Novel Infrared Phototransistors for Atmospheric CO2 Profiling at 2 microns Wavelength

Two-micron detectors are critical for atmospheric carbon dioxide profiling using the lidar technique. The characterization results of a novel infrared AlGaAsSb/ InGaAsSb phototransistor are reported. Emitter dark current variation with the collector-emitter voltage at different temperatures is acquired to examine the gain mechanism. Spectral response measurements resulted in responsivity as high as 2650 A/W at 2.05 microns wavelength. Bias voltage and temperature effects on the device responsivity are presented. The detectivity of this device is compared to InGaAs and HgCdTe devices.

Refaat, Tamer F.↗

NASA NTRS2003

InGaAsSb Detectors' Characterization for 2-Micron CO2 Lidar/DIAL Applications

Recent interest in monitoring atmospheric CO2 focuses attention on infrared remote sensing using the 2-micron lidar/differential absorption lidar (DIAL) technique. Quantum detectors are critical components in this technique, and many research efforts concentrate on developing such devices for the 2-micron wavelength. Characterization results of InGaAsSb quantum detectors for the 2-micron wavelength range are presented, including experimental setup and procedure. Detectors are prototype devices manufactured by using separate absorption and multiplication (SAM) structures. Characterization experiments include V-I measurements, spectral response and its variation with bias voltage and temperature, noise measurements, noise-equivalent-power (NEP) and detectivity calculations, and signal-to-noise ratio (SNR) estimation. A slight increase in the output signal occurred with increased bias voltage and was associated with a noise level increase. Cooling down the detectors reduces noise and shifts the cutoff wavelength to shorter values. Further improvement in the design and manufacturing process, by increasing the device gain and lowering its noise level, is necessary to meet the required CO2 lidar/DIAL specifications.

Refaat, Tamer F.↗

NASA NTRS2003

InGaAsSb Detectors Characterization for 2-Micron CO2 Lidar/DIAL Applications

Refaat, Tamer F.↗

NASA NTRS2003

Characterization and Analysis of InGaAsSb Detectors

Profiling of atmospheric CO2 at 2 micron wavelength using the LIDAR technique, has recently gained interest. Although several detectors might be suitable for this application, an ideal device would have high gain, low noise and narrow spectral response peaking around the wavelength of interest. This increases the detector signal-to-noise ratio and minimizes the background signal, thereby increasing the device sensitivity and dynamic range. Detectors meeting the above idealized criteria are commercially unavailable for this particular wavelength. In this paper, the characterization and analysis of Sb-based detectors for 2 micron lidar applications are presented. The detectors were manufactured by AstroPower, Inc., with an InGaAsSb absorbing layer and AlGaAsSb passivating layer. The characterization experiments included spectral response, current versus voltage and noise measurements. The effect of the detectors bias voltage and temperature on its performance, have been investigated as well. The detectors peak responsivity is located at the 2 micron wavelength. Comparing three detector samples, an optimization of the spectral response around the 2 micron wavelength, through a narrower spectral period was observed. Increasing the detector bias voltage enhances the device gain at the narrow spectral range, while cooling the device reduces the cut-off wavelength and lowers its noise. Noise-equivalent-power analysis results in a value as low as 4 x 10(exp -12) W/Hz(exp 1/2) corresponding to D* of 1 x 10(exp 10) cmHz(exp 1/2)/W, at -1 V and 20 C. Discussions also include device operational physics and optimization guidelines, taking into account peculiarity of the Type II heterointerface and transport mechanisms under these conditions.

Abedin, M. Nurul↗

NASA NTRS2000

Characterization of Advanced Avalanche Photodiodes for Water Vapor Lidar Receivers

Development of advanced differential absorption lidar (DIAL) receivers is very important to increase the accuracy of atmospheric water vapor measurements. A major component of such receivers is the optical detector. In the near-infrared wavelength range avalanche photodiodes (APD's) are the best choice for higher signal-to-noise ratio, where there are many water vapor absorption lines. In this study, characterization experiments were performed to evaluate a group of silicon-based APD's. The APD's have different structures representative of different manufacturers. The experiments include setups to calibrate these devices, as well as characterization of the effects of voltage bias and temperature on the responsivity, surface scans, noise measurements, and frequency response measurements. For each experiment, the setup, procedure, data analysis, and results are given and discussed. This research was done to choose a suitable APD detector for the development of an advanced atmospheric water vapor differential absorption lidar detection system operating either at 720, 820, or 940 nm. The results point out the benefits of using the super low ionization ratio (SLIK) structure APD for its lower noise-equivalent power, which was found to be on the order of 2 to 4 fW/Hz(sup (1/2)), with an appropriate optical system and electronics. The water vapor detection systems signal-to-noise ratio will increase by a factor of 10.

Refaat, Tamer F.↗

NASA NTRS2000

Advanced Atmospheric Water Vapor DIAL Detection System

Measurement of atmospheric water vapor is very important for understanding the Earth's climate and water cycle. The remote sensing Differential Absorption Lidar (DIAL) technique is a powerful method to perform such measurement from aircraft and space. This thesis describes a new advanced detection system, which incorporates major improvements regarding sensitivity and size. These improvements include a low noise advanced avalanche photodiode detector, a custom analog circuit, a 14-bit digitizer, a microcontroller for on board averaging and finally a fast computer interface. This thesis describes the design and validation of this new water vapor DIAL detection system which was integrated onto a small Printed Circuit Board (PCB) with minimal weight and power consumption. Comparing its measurements to an existing DIAL system for aerosol and water vapor profiling validated the detection system.

Refaat, Tamer F.↗

NASA NTRS1999

Temperature Control of Avalanche Photodiode Using Thermoelectric Cooler

Avalanche photodiodes (APDS) are quantum optical detectors that are used for visible and near infrared optical detection applications. Although APDs are compact, rugged, and have an internal gain mechanism that is suitable for low light intensity; their responsivity, and therefore their output, is strongly dependent on the device temperature. Thermoelectric coolers (TEC) offers a suitable solution to this problem. A TEC is a solid state cooling device, which can be controlled by changing its current. TECs are compact and rugged, and they can precisely control the temperature to within 0.1 C with more than a 150 C temperature gradient between its surfaces. In this Memorandum, a proportional integral (PI) temperature controller for APDs using a TEC is discussed. The controller is compact and can successfully cool the APD to almost 0 C in an ambient temperature environment of up to 27 C.

Refaat, Tamer F.↗

NASA NTRS1999

Design of Advanced Atmospheric Water Vapor Differential Absorption Lidar (DIAL) Detection System

The measurement of atmospheric water vapor is very important for understanding the Earth's climate and water cycle. The lidar atmospheric sensing experiment (LASE) is an instrument designed and operated by the Langley Research Center for high precision water vapor measurements. The design details of a new water vapor lidar detection system that improves the measurement sensitivity of the LASE instrument by a factor of 10 are discussed. The new system consists of an advanced, very low noise, avalanche photodiode (APD) and a state-of-the-art signal processing circuit. The new low-power system is also compact and lightweight so that it would be suitable for space flight and unpiloted atmospheric vehicles (UAV) applications. The whole system is contained on one small printed circuit board (9 x 15 sq cm). The detection system is mounted at the focal plane of a lidar receiver telescope, and the digital output is read by a personal computer with a digital data acquisition card.

Refaat, Tamer F.↗

NASA NTRS1998

Advanced Detector and Waveform Digitizer for Water Vapor DIAL Systems

Measurement of atmospheric water vapor has become a major requirement for understanding moist-air processes. Differential absorption lidar (DIAL) is a technique best suited for the measurement of atmospheric water vapor. NASA Langley Research Center is continually developing improved DIAL systems. One aspect of current development is focused on the enhancement of a DIAL receiver by applying state-of-the-art technology in building a new compact detection system that will be placed directly on the DIAL receiver telescope. The newly developed detection system has the capability of being digitally interfaced with a simple personal computer, using a discrete input/output interface. This has the potential of transmitting digital data over relatively long distances instead of analog signals, which greatly reduces measurement noise. In this paper, we discuss some results from the new compact water vapor DIAL detection system which includes a silicon based avalanche photodiode (APD) detector, a 14-bit, 10-MHz waveform digitizer, a microcontroller and other auxiliary electronics. All of which are contained on a small printed-circuit-board. This will significantly reduce the weight and volume over the current CAMAC system and eventually will be used in a water vapor DIAL system on an unpiloted atmospheric vehicle (UAV) aircraft, or alternatively on an orbiting spacecraft.

Refaat, Tamer F.↗