Engineering topics
Reck, Theodore
Publications and source records attributed to Reck, Theodore.
Wafer-To-Wafer Alignment Method
A silicon alignment pin is used to align successive layer of component made in semiconductor chips and/or metallic components to make easier the assembly of devices having a layered structure. The pin is made as a compressible structure which can be squeezed to reduce its outer diameter, have one end fit into a corresponding alignment pocket or cavity defined in a layer of material to be assembled into a layered structure, and then allowed to expand to produce an interference fit with the cavity. The other end can then be inserted into a corresponding cavity defined in a surface of a second layer of material that mates with the first layer. The two layers are in registry when the pin is mated to both. Multiple layers can be assembled to create a multilayer structure. Examples of such devices are presented.
Antennas for Space Instruments from GHz to THz
In this paper we present an overview of different antenna technologies for space-based instruments. We show that some of the designs that work well at gigahertz frequencies are difficult to implement at terahertz frequencies due to tight tolerance and rms surface finish requirements. We also show that antenna designs are dictated not only by the frequency of operations but also by the space platform of choice. In this paper, we also present ideas for low-profile terahertz antennas for implementation on SmallSat and CubeSat platforms.
Hybrid CMOS System-on-Chip / InP MMIC Systems for Deep-Space Planetary Exploration at mm-Wave and THz
This paper discusses the applicability of hybrid CMOS/InP-MMIC mm-Wave systems to remote sensing instrumentation for space exploration in Earth and Planetary science. We review the need for lower power and lighter weight instruments to accommodate the limited payload resources of exploration spacecraft, and then demonstrate how hybrid systems can address these challenges. An example hybrid CMOS-InP radiometer operating at 100 GHz is discoursed in detail including circuit & system design, interfacing and packaging techniques. Measurements are presented showing that the hybrid approach does not compromise instrument sensitivity.
340 Ghz Multipixel Transceiver
A multi-pixel terahertz transceiver is constructed using a stack of semiconductor layers that communicate using vias defined within the semiconductor layers. By using a stack of semiconductor layers, the various electrical functions of each layer can be tested easily without having to assemble the entire transceiver. In addition, the design allows the production of a transceiver having pixels set 10 mm apart.
Interconnect and Packaging Technologies for Terahertz Communication Systems
Using newly developed silicon micromachining technology that enables low-loss and highly integrated packaging solutions, we are developing vertically stacked transmitters and receivers at terahertz frequencies that can be used for communication and other terahertz systems. Although there are multiple ways to address the problem of interconnect and packaging solutions at these frequencies, such as system-on-package (SOP), multi-chip modules (MCM), substrate integrated waveguide (SIW), liquid crystal polymer (LCP) based multilayer technologies, and others, we show that deep reactive ion etching (DRIE) based silicon micromachining with vertical integration allows the most effective solutions at terahertz frequencies.
Design, Fabrication and Testing of a Modulated Metasurface Antenna at 300 GHz
This paper describes the design and realization of a modulated metasurface (MTS) antenna at 300 GHz. To overcome the hurdles associated with the use of dielectric substrates in the sub-millimeter wave range, we propose an MTS structure which consists of an array of metalized cylinders placed on a ground plane. The metal cylinders are arranged in a square lattice with sub-wavelength unit cell size. This MTS topology has been successfully used to design a spiral MTS antenna. The resulting structure has been micromachined out of a silicon wafer by means of deep reactive ion etching (DRIE). The performance of the antenna has been verified by full-wave simulations, and measurements will be available at the time of the conference.
Silicon Alignment Pins: An Easy Way to Realize a Wafer-To-Wafer Alignment
A silicon alignment pin is used to align successive layers of components made in semiconductor chips and/or metallic components to make easier the assembly of devices having a layered structure. The pin is made as a compressible structure which can be squeezed to reduce its outer diameter, have one end fit into a corresponding alignment pocket or cavity defined in a layer of material to be assembled into a layered structure, and then allowed to expand to produce an interference fit with the cavity. The other end can then be inserted into a corresponding cavity defined in a surface of a second layer of material that mates with the first layer. The two layers are in registry when the pin is mated to both. Multiple layers can be assembled to create a multilayer structure. Examples of such devices are presented.
Multi-Step Deep Reactive Ion Etching Fabrication Process for Silicon-Based Terahertz Components
A multi-step silicon etching process has been developed to fabricate silicon-based terahertz (THz) waveguide components. This technique provides precise dimensional control across multiple etch depths with batch processing capabilities. Nonlinear and passive components such as mixers and multipliers waveguides, hybrids, OMTs and twists have been fabricated and integrated into a small silicon package. This fabrication technique enables a wafer-stacking architecture to provide ultra-compact multi-pixel receiver front-ends in the THz range.
Ultra-Compact, Superconducting Spectrometer-on-a-Chip at Submillimeter Wavelengths
Small size, wide spectral bandwidth, and highly multiplexed detector readout are required to develop powerful multi-beam spectrometers for high-redshift observations. Currently available spectrometers at these frequencies are large and bulky. The grating sizes for these spectrometers are prohibitive. This fundamental size issue is a key limitation for space-based spectrometers for astrophysics applications. A novel, moderate-resolving-power (R-700), ultra-compact spectrograph-on-a-chip for millimeter and submillimeter wavelengths is the solution.
THz Imaging Radar: Technology Development for Multi-Pixel Multi-Color Architectures
No abstract available
Array Technology for Terahertz Imaging
Heterodyne terahertz (0.3 - 3THz) imaging systems are currently limited to single or a low number of pixels. Drastic improvements in imaging sensitivity and speed can be achieved by replacing single pixel systems with an array of detectors. This paper presents an array topology that is being developed at the Jet Propulsion Laboratory based on the micromachining of silicon. This technique fabricates the array's package and waveguide components by plasma etching of silicon, resulting in devices with precision surpassing that of current metal machining techniques. Using silicon increases the versatility of the packaging, enabling a variety of orientations of circuitry within the device which increases circuit density and design options. The design of a two-pixel transceiver utilizing a stacked architecture is presented that achieves a pixel spacing of 10mm. By only allowing coupling from the top and bottom of the package the design can readily be arrayed in two dimensions with a spacing of 10mm x 18mm.
Terahertz Array Receivers with Integrated Antennas
Highly sensitive terahertz heterodyne receivers have been mostly single-pixel. However, now there is a real need of multi-pixel array receivers at these frequencies driven by the science and instrument requirements. In this paper we explore various receiver font-end and antenna architectures for use in multi-pixel integrated arrays at terahertz frequencies. Development of wafer-level integrated terahertz receiver front-end by using advanced semiconductor fabrication technologies has progressed very well over the past few years. Novel stacking of micro-machined silicon wafers which allows for the 3-dimensional integration of various terahertz receiver components in extremely small packages has made it possible to design multi-pixel heterodyne arrays. One of the critical technologies to achieve fully integrated system is the antenna arrays compatible with the receiver array architecture. In this paper we explore different receiver and antenna architectures for multi-pixel heterodyne and direct detector arrays for various applications such as multi-pixel high resolution spectrometer and imaging radar at terahertz frequencies.