Engineering Papers⌕ Search

Engineering topics

Raymond L Ladbury

Publications and source records attributed to Raymond L Ladbury.

The NASA Radiation Hardness Assurance (RHA) Process Standard

This paper presents status on the upcoming NASA Agency-level RHA Process Standard. Based on recommendations provided by the NASA Engineering and Safety Center (NESC), the NASA Electronic Parts and Packaging (NEPP) Program has led development of an agency-level standard for space flight avionics and electronics RHA. The standard introduces a novel RHA taxonomy and prescribes the process required by NASA programs and projects to baseline their RHA programs consistent with the MEAL (Mission, Environment, Application, and Lifetime) criteria including the risk tolerance posture. The standard also provides requirements for the RHA schedule integration in the program or project lifecycle and requirements for data deliverables content. Additional non-prescriptive technical content is provided in the standard appendices to guide development of RHA programs for NASA missions.

Avionics↗

A Confidence-Based Approach to Including Survivors in a Probabilistic TID Failure Assessment

A probabilistic total ionizing dose (TID) failure assessment is extended to include survivor data, enabling the bounding of failure probability to a desired confidence level (CL) without failure data. The extension provides an avenue for analyzing microelectronics tested for TID without reaching a failure mode, a scenario often encountered by missions utilizing commercial-off-the-shelf (COTS) technologies. Using the type-I censored likelihood formulation and a realistic upper bound on expected device performance, the failure probability space is bounded by confidence contours within the context of a variable environment. The framework accommodates any type of distribution assumed for the part failure or the environment under consideration. Furthermore, the framework can be utilized pre-emptively to plan future device TID tests, minimizing costs while meeting survival requirements. Heritage data may also be used as survivors to further minimize testing costs when parts are from the same lot, but the amount of constraint derived from heritage is limited. Altogether, the framework enables a formal, mathematically rigorous analysis of radiation tolerant devices tested to a maximum dose, as well as flight heritage, in a hardness assurance methodology.

confidence↗

Dealing with Ion LET Uncertainties: An Application of Generalized Linear Models

Although most SEE rate estimation methods presume a fit to SEE cross section vs. LET, fitting SEE data is challenging because the data are not compatible with the assumptions of many common fitting techniques (e.g. linear regression. The difficulty of fitting such data is compounded when the LET of the ion responsible for an SEE is uncertain. We modify a Generalized Linear Model SEE data fitting methodology to accommodate uncertain LET and apply the method to the problem of backside heavy-ion SEE testing to demonstrate the utility of the method, explore the dependence of systematic errors that arise from improper treatment of LET uncertainty and develop guidelines for minimizing such systematic errors when proper treatment is not possible. Additional applications are suggested and assessed for suitability of treatment by the model.

Single-event effects↗

Avionics Radiation Hardness Assurance (RHA) Guidelines

Based on the need to develop and adopt timely and up-to-date guidance to ensure that natural space radiation environment threats do not compromise mission success, the NASA Engineering and Safety Center (NESC) was solicited to develop and publish guidance for deriving radiation hardness assurance (RHA) requirements and for evaluating avionics hardware elements with respect to total ionizing dose, total non-ionizing dose, and single event effects. This document contains the outcome of the NESC assessment.

Guidelines↗

LET and Range Characteristics of Proton Recoil Ions in Gallium Nitride (GaN)

A better understanding of the linear energy transfer and the range of proton recoil ions in gallium nitride is necessary to properly evaluate GaN device radiation tolerance. By analyzing the linear energy transfer (LET) and range of recoil heavy ions in GaN we can begin to reproduce the body of knowledge that exists for Si-based devices for this upcoming technology. Although the previous data on older technology has impressive depth and breadth we must be diligent and cautious in the application of these institutional intuitions when applied to emerging technologies such as GaN. As ever increasing materials science advances emerge, a sound methodology for evaluating new technologies must be established in order to apply what we know towards the effort of ensuring radiation tolerance.

gallium nitride (GaN)↗

Schottky Diode Derating for Survivability in a Heavy Ion Environment

In this paper, we irradiate a number of silicon power Schottky diodes from a variety of manufacturers. The tested diodes represent a wide assortment of reverse voltages and forward currents. Additionally, we review correlations between single-event failures in Schottky diodes and device electrical parameters. The spatial locations of failures in the diode are discussed, as well as a possible explanation for why the failures occur. Based on these correlations to date, we propose a derating scheme for Schottky diodes flown in a heavy ion environment and suggest screening procedures for decreasing the risks of such failures.

Radiation effects↗