Engineering topics

Rasky, P. H. L.

Publications and source records attributed to Rasky, P. H. L..

3 records

NASA NTRS1986

Advanced detectors and signal processing

Continued progress is reported toward development of a silicon on garnet technology which would allow fabrication of advanced detection and signal processing circuits on bubble memories. The first integrated detectors and propagation patterns have been designed and incorporated on a new mask set. In addition, annealing studies on spacer layers are performed. Based on those studies, a new double layer spacer is proposed which should reduce contamination of the silicon originating in the substrate. Finally, the magnetic sensitivity of uncontaminated detectors from the last lot of wafers is measured. The measured sensitivity is lower than anticipated but still higher than present magnetoresistive detectors.

Greve, D. W.↗

NASA NTRS1985

The feasibility of silicon on garnet technology

The feasibility of combining silicon and magnetic bubble technologies is demonstrated. Functional MOSFETs have been fabricated on top of bubble films coated with 1-micron thick SiO2 layers. The large grain silicon necessary for these devices is obtained by laser recrystallization of polycrystalline silicon (polysilicon). The laser-recrystallization process causes changes in the magnetic properties of the bubble film; however, these changes can be reversed by subsequent thermal anneals. The required temperature treatments after laser annealing are compatible with the MOSFET fabrication process.

Rasky, P. H. L.↗

NASA NTRS1985

Advanced detectors and signal processing for bubble memories

The feasibility of combining silicon and magnetic bubble technologies is demonstrated. Results of bubble film annealing indicate that a low temperature silicon on garnet technology is the most likely one to succeed commercially. Annealing ambients are also shown to have a major effect on the magnetic properties of bubble films. Functional MOSFETs were fabricated on bubble films coated with thick (approximately 1 micron) SiO2 layers. The two main problems with these silicon on garnet MOSFETs are low electron mobilities and large gate leakage currents. Results indicate that the laser recrystallized silicon and gate oxide (SiO2) layers are contaminated. The data suggest that part of the contaminating ions originate in the sputtered oxide spacer layer and part originates in the bubble film itself. A diffusion barrier, such as silicon nitride, placed between the bubble film and the silicon layer should eliminate the contamination induced problem.

Kryder, M. H.↗