Modeling and Design of Atomic Precision Advanced Manufacturing (APAM) Enabled Bipolar Devices.
Abstract not provided.
Gao, Xujiao↗
Engineering topics
Randall, John N.
Publications and source records attributed to Randall, John N..
Atomic-precision advanced manufacturing for Si quantum computing
Abstract A materials synthesis method that we call atomic-precision advanced manufacturing (APAM), which is the only known route to tailor silicon nanoelectronics with full 3D atomic precision, is making an impact as a powerful prototyping tool for quantum computing. Quantum computing schemes using atomic ( 31 P) spin qubits are compelling for future scale-up owing to long dephasing times, one- and two-qubit gates nearing high-fidelity thresholds for fault-tolerant quantum error correction, and emerging routes to manufacturing via proven Si foundry techniques. Multiqubit devices are challenging to fabricate by conventional means owing to tight interqubit pitches forced by short-range spin interactions, and APAM offers the required (Å-scale) precision to systematically investigate solutions. However, applying APAM to fabricate circuitry with increasing numbers of qubits will require significant technique development. Here, we provide a tutorial on APAM techniques and materials and highlight its impacts in quantum computing research. Finally, we describe challenges on the path to multiqubit architectures and opportunities for APAM technique development. Graphic Abstract
36 MATERIALS SCIENCE↗
Atomic precision imaging with an on-chip scanning tunneling microscope integrated into a commercial ultrahigh vacuum STM system
In this article, we replace the Z axis of the piezotube of a conventional Ultrahigh-Vacuum (UHV) Scanning Tunneling Microscope (STM) with a one-degree-of-freedom Microelectromechanical-System (MEMS) nanopositioner. As a result, a hybrid system is realized in which motions in the XY plane are carried out by the piezotube, while the MEMS device performs the Z-axis positioning with a smaller footprint and higher sensitivity. With the proposed system and a feedback loop, STM imaging is conducted on an H-passivated Si (100)-2×1 sample in a UHV condition, demonstrating that this on-chip STM is conducive to atomic precision scanning tunneling microscopy.
Engineering↗
Ultrafast method for scanning tunneling spectroscopy
A scanning tunneling microscope (STM) combines unique capabilities in imaging and spectroscopy with atomic precision, and it can obtain energy-resolved spectroscopic data with atomic resolution. In this paper, we utilize a recently proposed modification to the STM feedback control loop to acquire high quality d 2 I/dV 2 images. We have developed a constant differential conductance imaging method by closing the STM feedback loop with a high precision dI/dV measurement. In this mode, the tip’s vertical position is adjusted so as to keep the differential conductance constant during raster scanning of the surface. Based on this imaging mode, we propose a new technique to acquire fast and reliable scanning tunneling spectroscopy (STS) data simultaneously with the imaging.
47 OTHER INSTRUMENTATION↗
Micromechanical Switches on GaAs for Microwave Applications
In this presentation, we describe the fabrication of micro-electro-mechanical system (MEMS) devices, in particular, of low-frequency multi-element electrical switches using SiO2 cantilevers. The switches discussed are related to micromechanical membrane structures used to perform switching of optical signals on silicon substrates. These switches use a thin metal membrane which is actuated by an electrostatic potential, causing the switch to make or break contact. The advantages include: superior isolation, high power handling capabilities, high radiation hardening, very low power operations, and the ability to integrate onto GaAs monolithic microwave integrated circuit (MMIC) chips.
Randall, John N.↗