Engineering topics
Publications and source records attributed to Ramesham, R..
MEMS have shown a significant promise in the last decade for a variety of applications such as air-bag, pressure sensors, accelerometer, microgyro, chemical sensors, artificial nose, etc.
Explore the source record for details and available documents.
Explore the source record for details and available documents.
The measurement of acceleration has been accomplished using several technologies in high-reliability applications such as guidance control, detonation, and shock/vibration measurement. Electromechanical, piezoelectric, piezoresistive, and capacitive acceleration sensors are available and the literature pertinent to giant magnetoresistive sensors (GMR) for the above applications are scanty.
This paper discusses the fabrication aspects of a sensor device that is based on a sputter deposited multilayer giant magnetoresistive (GMR) sensor. The device consists of a micromachined microstructure (membrane), GMR sensor, and a sputtered hard magnetic thin film element on to microstructure.
This paper reviews the current status of MEMS packaging technology from COTS to specific application provides lessons learned, and finally, identifies a need for systematic approach for this purpose.
This paper discusses the fabrication aspects of an accelerometer device that is based on a sputter deposited, multilayer, and giant magnetoresistive field sensor.
This paper discusses the fabrication aspects of a sensor device that is based on a sputter deposited, multilayer, giant magnetoresistive field sensor.
Polycrystalline diamond thin film has been grown on a silicon substrate using high pressure microwave plasma-assisted chemical vapor deposition from a gas mixture of methane and hydrogen at a substrate temperature of 950 degrees celcius.
High secondary electron yields (sigma=14-27) from polycrystalline diamond films on Mo substrates have been reported previously. We observed that continuous exposure to an electron beam degraded the secondary yield in vacuum as a function of fluence owing to a loss of surface hydrogen. However, the hydrogen partial pressure could be adjusted such that the high secondary yield remained stable during beam exposure. We have constructed a prototype electron multiplier using these diamond films for use in ultrahigh vacuum. A gain of 0.9 times 10(exp 5) has been measured in a d.c. mode. Palladium, titanium and aluminum nitride have been studied for possible dynode substrate materials which might eliminate the need for hydrogen during operation. Total secondary yields as high as 50 were measured from diamond on palladium and sigma was stable at 25 during heating at 700 K in vacuum. Raman spectroscopy and scanning electron microscopy showed that variations in sigma from diamond films on Pd were due to differing concentrations of non-diamond carbon.
Polycrystalline diamond thin films have been deposited on single-crystal silicon substrates at low temperatures (not above 600 C) using a mixture of hydrogen and methane gases by high-pressure microwave plasma-assisted chemical vapor deposition. Low-temperature deposition has been achieved by cooling the substrate holder with nitrogen gas. For deposition at reduced substrate temperature, it has been found that nucleation of diamond will not occur unless the methane/hydrogen ratio is increased significantly from its value at higher substrate temperature. Selective deposition of polycrystalline diamond thin films has been achieved at 600 C. Decrease in the diamond particle size and growth rate and an increase in surface smoothness have been observed with decreasing substrate temperature during the growth of thin films. As-deposited films are identified by Raman spectroscopy, and the morphology is analyzed by scanning electron microscopy.
Selective deposition and abrasion, as well as etching in atomic oxygen or reduced-pressure air, have been used to prepare patterned polycrystalline diamond films which, on further processing by anisotropic Si etching, yield the microstructures of such devices as flow sensors and accelerometers. Both types of sensor have been experimentally tested in the respective functions of hot-wire anemometer and both single- and double-hinged accelerometer.
The fabrication and performance of WO3-based, solid-state, three-terminal device configurations as programmable analog memory elements are reported. These transistorlike device structures exhibit good resistance progammability with a remarkable resolution of a few percent of the resistive strength over a four orders of magnitude dynamic range. The most critical component of these devices is an insulating layer between the active WO3 and the cation donor layer. The progamming characteristics and operation mechanisms of the device are described, and probable reaction mechanisms critical to the device stability are discussed.
A solid-state, resistance tailorable, programmable-once, binary, nonvolatile memory switch based on manganese oxide thin films is reported. MnO(x) exhibits irreversible memory switching from conducting (on) to insulating (off) state, with the off and on resistance ratio of greater than 10,000. The switching mechanism is current-triggered chemical transformation of a conductive MnO(2-Delta) to an insulating Mn2O3 state. The energy required for switching is of the order of 4-20 nJ/sq micron. The low switching energy, stability of the on and off states, and tailorability of the on state resistance make these microswitches well suited as programmable binary synapses in electronic associative memories based on neural network models.
Corrosion-resistant amorphous metallic alloy films of Mo49Cr33B18 with a crystallization temperature of 590 C were deposited onto glass and quartz substrates by magnetron sputter-quench technique. The amorphous nature of the films was confirmed by their diffuse X-ray diffraction patterns. The deposited films are densely packed (zone T) and exhibit low stress and good adhesion to the substrate. Corrosion current of as-deposited coating of MoCrB amorphous metallic alloy is approximately three orders of magnitude less than the corrosion current of 304 stainless steel in 1N H2SO4 solution.
A novel thin film approach to neural-network-based high-density associative memory is described. The information is stored locally in a memory matrix of passive, nonvolatile, binary connection elements with a potential to achieve a storage density of 10 to the 9th bits/sq cm. Microswitches based on memory switching in thin film hydrogenated amorphous silicon, and alternatively in manganese oxide, have been used as programmable read-only memory elements. Low-energy switching has been ascertained in both these materials. Fabrication and testing of memory matrix is described. High-speed associative recall approaching 10 to the 7th bits/sec and high storage capacity in such a connection matrix memory system is also described.