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Quarterman, Patrick

Publications and source records attributed to Quarterman, Patrick.

Exchange-Biased Quantum Anomalous Hall Effect

The quantum anomalous Hall (QAH) effect is characterized by a dissipationless chiral edge state with a quantized Hall resistance at zero magnetic field. Manipulating the QAH state is of great importance in both the understanding of topological quantum physics and the implementation of dissipationless electronics. Here, the QAH effect is realized in the magnetic topological insulator Cr-doped (Bi,Sb) 2 Te 3 (CBST) grown on an uncompensated antiferromagnetic insulator Al-doped Cr 2 O 3 . Through polarized neutron reflectometry (PNR), a strong exchange coupling is found between CBST and Al-Cr 2 O 3 surface spins fixing interfacial magnetic moments perpendicular to the film plane. Further, the interfacial coupling results in an exchange-biased QAH effect. This study further demonstrates that the magnitude and sign of the exchange bias can be effectively controlled using a field training process to set the magnetization of the Al-Cr 2 O 3 layer. It demonstrates the use of the exchange bias effect to effectively manipulate the QAH state, opening new possibilities in QAH-based spintronics.

36 MATERIALS SCIENCE↗

Room-temperature valence transition in a strain-tuned perovskite oxide

Abstract Cobalt oxides have long been understood to display intriguing phenomena known as spin-state crossovers, where the cobalt ion spin changes vs. temperature, pressure, etc. A very different situation was recently uncovered in praseodymium-containing cobalt oxides, where a first-order coupled spin-state/structural/metal-insulator transition occurs, driven by a remarkable praseodymium valence transition. Such valence transitions, particularly when triggering spin-state and metal-insulator transitions, offer highly appealing functionality, but have thus far been confined to cryogenic temperatures in bulk materials (e.g., 90 K in Pr 1- x Ca x CoO 3 ). Here, we show that in thin films of the complex perovskite (Pr 1- y Y y ) 1- x Ca x CoO 3-δ , heteroepitaxial strain tuning enables stabilization of valence-driven spin-state/structural/metal-insulator transitions to at least 291 K, i.e., around room temperature. The technological implications of this result are accompanied by fundamental prospects, as complete strain control of the electronic ground state is demonstrated, from ferromagnetic metal under tension to nonmagnetic insulator under compression, thereby exposing a potential novel quantum critical point.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Probing antiferromagnetic coupling in magnetic insulator/metal heterostructures

Using depth- and element-resolved characterization, we report insights into antiferromagnetic coupling in Y 3 ⁢Fe 5 ⁢O 12 /permalloy (YIG/Py) and Y 3 ⁢Fe 5 ⁢O 12 /Co (YIG/Co) thin-film heterostructures grown on Si/SiO 2 and Gd 3⁢ Ga 5⁢ O 12 substrates. We build on recent work demonstrating antiferromagnetic coupling in polycrystalline YIG/metallic-ferromagnetic systems by characterizing differences in the structural and magnetic properties which depend on the choice of ferromagnet (Py vs Co), seed layer (with and without Pt), and substrate (Si/SiO 2 vs Gd 3 ⁢Ga 5 ⁢O 12 ). These differences in the sample structure manifest as notable changes in interface coupling sign, magnetic reversal mechanisms, magnetic depth profiles, and domain structure. Through a combination of magnetometry, polarized neutron reflectometry, and x-ray photoemission electron microscopy, a comprehensive picture of the magnetic interactions is realized, with lateral- and depth resolution at submicrometer and nanometer scales, respectively. These results confirm that both Co and Py share a preference to align antiparallel to polycrystalline YIG grown on some substrates (Si/SiO 2 and Si/SiO 2 /Pt), while coupling ferromagnetically with highly oriented YIG on (111) Gd 3⁢ Ga 5 ⁢O 12 and (110) Gd 3 ⁢Ga 5⁢ O 12 /Pt substrates. The complex interplay among magnetic interactions at the YIG/ferromagnetic interface has important implications for spintronic and magnonic devices based on this platform.

Exchange interaction↗