Engineering topics

Qiu, Y.

Publications and source records attributed to Qiu, Y..

24 records · Page 2

NASA NTRS1994

Mutagenic effects of heavy ion radiation in plants

Genetic and developmental effects of heavy ions in maize and rice were investigated. Heavy particles with various charges and energies were accelerated at the BEVALAC. The frequency of occurrence of white-yellow stripes on leaves of plants developed from irradiated maize seeds increased linearly with dose, and high Linear Energy Transfer (LET) heavy charged particles, e.g., neon, argon, and iron, were 2-12 times as effective as gamma rays in inducing this type of mutation. The effectiveness of high-LET heavy ion in (1) inhibiting rice seedling growth, (2) reducing plant fertility, (3) inducing chromosome aberration and micronuclei in root tip cells and pollen mother cells of the first generation plants developed from exposed seeds, and (4) inducing mutation in the second generation, were greater than that of low-LET gamma rays. All effects observed were dose-dependent; however, there appeared to be an optimal range of doses for inducing certain types of mutation, for example, for argon ions (400 MeV/u) at 90-100 Gy, several valuable mutant lines with favorable characters, such as semidwarf, early maturity and high yield ability, were obtained. Experimental results suggest that the potential application of heavy ions in crop improvement is promising. Restriction-fragment-length-polymorphism (RFLP) analysis of two semidwarf mutants induced by argon particles revealed that large DNA alterations might be involved in these mutants.

Mei, M.↗

NASA NTRS1984

A new technique for measuring sputtering yields at high energies

The use of thin, self-supporting carbon catcher foils allows one to measure sputtering yields in a broad range of materials with high sensitivity. Analyzing the foils with Rutherford forward scattering, sputtered Al, Si and P surface densities down to 5 x 10 to the 13th per sq cm with uncertainties of about 20 percent have been measured.

Qiu, Y.↗

NASA NTRS1983

Sputtering of UF4 by high energy heavy ions

The sputtering of UF4 targets by energetic beams of O-16, F-19, and Cl-35 ions has been investigated for beam energies in the range 0.12 to 1.5 MeV/amu. The sputtering yields, which follow the same trend as the electronic part of the projectile energy loss in the material, are observed to have a strong dependence on the charge state of the incident ions. Data have been taken both in transmission and reflection (0 and 180 deg to the incident beam direction, respectively). Energy spectra of the neutral sputtered particles have been obtained for 5 MeV F-19 ions and for 13 MeV Cl-35 ions; in both cases the spectrum has a Maxwellian form. The data obtained are compared with several models of the high energy sputtering process.

Meins, C. K.↗

NASA NTRS1983

Sputtering of silicon and its compounds in the electronic stopping region

Silicon, silicon dioxide, and silicon nitride have been sputtered with chlorine ions at 5 MeV and 20 MeV. While the yield from the silicon target was unmeasurably low, the insulating compounds exhibited the enhanced yields observed in other insulating targets. The yield follows the electronic stopping power and seems to be independent of the target's thermal properties. Some of the data suggest that the enhanced sputtering mechanism may be active in extremely thin films (not less than 3 monolayers).

Qiu, Y.↗

NASA NTRS1982

Sputtering of Al2O3 and LiNbO3 in the electronic stopping region

Because of recent interest in the role played by the thermal properties of materials that exhibit high energy sputtering, Al2O3 and LiNbO3 were sputtered with chlorine ions at energies between 3 MeV and 25 MeV. To detect the sputtered Al and Nb we employ thin carbon catcher foils, which are analyzed with Rutherford scattering in the forward direction. Al surface densities of 10 to the 14th/sq cm and Nb surface densities of 10 to the 13th/sq cm are easily measured. The sputtering yields for both Al2O3 and LiNbO3 increase rapidly with increasing chlorine energy, and the Al and Nb yields are both approximately 0.2 at 20 MeV. Tests for dose, beam current, and contamination effects will be discussed.

Qiu, Y.↗

NASA NTRS1981

Ion-beam-enhanced adhesion in the electronic stopping region

The use of ion beams in the electronic stopping region to improve the adhesion of insulators to other materials is described. In particular, the bonding of Au films to Teflon, ferrite, and SiO2 was improved by bombarding them with He and Cl, respectively. Improvements in bonding were also observed for Au on glass, Au and Cu on sapphire, and Si3N4 on Si. The mechanism is apparently associated with sputtering and track forming processes occurring in the electronic stopping region. Some applications are discussed.

Griffith, J. E.↗