Independent Electron and Ion Energy Distribution Control for Semiconductor Processing Phase I Final Technical Report
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70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
Engineering topics
Prager, James
Publications and source records attributed to Prager, James.
Improving Ion Control for Semiconductor Processing with Repetitive Pulsed Power - Phase II Final Technical Report
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70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
High Voltage Pulse Generator for High-Energy Beam Kickers Final Technical Report
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43 PARTICLE ACCELERATORS↗
Efficient IGBT switching
Embodiments of the invention provide IGBT circuit modules with increased efficiencies. These efficiencies can be realized in a number of ways. In some embodiments, the gate resistance and/or voltage can be minimized. In some embodiments, the IGBT circuit module can be switched using an isolated receiver such as a fiber optic receiver. In some embodiments, a single driver can drive a single IGBT. And in some embodiments, a current bypass circuit can be included. Various other embodiments of the invention are disclosed.
Ziemba, Timothy↗