Engineering topics

Pop, Eric

Publications and source records attributed to Pop, Eric.

21 records · Page 2

DOE OSTI2020

Visualizing Energy Transfer at Buried Interfaces in Layered Materials Using Picosecond X-Rays

Understanding the fundamentals of nanoscale heat propagation is crucial for next-generation electronics. For instance, weak van der Waals bonds of layered materials are known to limit their thermal boundary conductance (TBC), presenting a heat dissipation bottleneck. In this paper we present a new non-destructive method to probe heat transport in nanoscale crystalline materials using time-resolved x-ray measurements of photo-induced thermal strain. This technique directly monitors time-dependent temperature changes in the crystal and the subsequent relaxation across buried interfaces by measuring changes in the c-axis lattice spacing after optical excitation. We investigate films of five different layered transition metal dichalcogenides MoX 2 [X= S, Se, Te] and WX 2 [X= S, Se] as well as graphite and a W-doped alloy of MoTe 2 , on c-plane sapphire substrates, finding TBC values in the range 10-30 MWm -2 K -1 at room temperature. In conjunction with molecular dynamics simulations, we show that the high thermal resistances are a consequence of weak interfacial van der Waals bonding and low phonon irradiance. This work paves the way for an improved understanding of thermal bottlenecks in emerging three-dimensional heterogeneously integrated technologies.

36 MATERIALS SCIENCE↗

DOE OSTI2020

Stacking Independence and Resonant Interlayer Excitation of Monolayer WSe 2 /MoSe 2 Heterostructures for Photocatalytic Energy Conversion

Here, we report a comparison of the photocatalytic performance of WSe 2 -on-MoSe 2 and MoSe 2 -on-WSe 2 heterostructures. While built-in electric fields exist in these heterostructures on the order of 100 kV/cm due to band offsets between these two materials, the photocatalytic performance (i.e., photocurrent) is independent of the stacking order of the two materials. Solving Poisson’s equation under these conditions, we find that the built-in electric field produced in the heterostructure is at least 1 order of magnitude smaller than that produced in the electrochemical double layer (i.e., Helmholtz layer). Mott–Schottky measurements indicate that transition metal dichalcogenides (TMDCs) on ITO electrodes have similar capacitance to that of bare ITO, providing further evidence that the interfacial electric fields produced in the solid state heterostructure are negligible compared to the fields generated by the ions in solution. The photocatalytic performance of these heterostructures provided the largest relative enhancement in the heterojunction region under 920 and 785 nm irradiation compared with 532 and 633 nm wavelength excitation. Here, the 920 nm (1.35 eV) photons lie below the band gaps and produce very little photocurrent in the constituent monolayer materials but resonantly excite the interlayer optical transition in the heterostructure, producing a 5-fold enhancement in the measured photocurrent.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2020

Monolithic mtesla-level magnetic induction by self-rolled-up membrane technology

Monolithic strong magnetic induction at the mtesla to tesla level provides essential functionalities to physical, chemical, and medical systems. Current design options are constrained by existing capabilities in three-dimensional (3D) structure construction, current handling, and magnetic material integration. We report here geometric transformation of large-area and relatively thick (~100 to 250 nm) 2D nanomembranes into multiturn 3D air-core microtubes by a vapor-phase self-rolled-up membrane (S-RuM) nanotechnology, combined with postrolling integration of ferrofluid magnetic materials by capillary force. Hundreds of S-RuM power inductors on sapphire are designed and tested, with maximum operating frequency exceeding 500 MHz. An inductance of 1.24 μH at 10 kHz has been achieved for a single microtube inductor, with corresponding areal and volumetric inductance densities of 3 μH/mm 2 and 23 μH/mm 3 , respectively. The simulated intensity of the magnetic induction reaches tens of mtesla in fabricated devices at 10 MHz.

42 ENGINEERING↗